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| LL4148 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting LL-34 Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 s Symbol VRM VR IF(AV) IFSM Ptot Tj TS Value 100 75 200 0.5 1 4 500 1) Unit V V mA A mW O Power Dissipation Junction Temperature Storage Temperature Range 1) 175 - 65 to + 175 C C O Valid provided that electrodes are kept at ambient temperature. SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 LL4148 Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 A Pulses Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Symbol VF Min. - Max. 1 Unit V IR IR IR V(BR)R Ctot Vfr trr RthA V 100 - 25 5 50 4 nA A A V pF - 2.5 V 0.45 4 0.35 1) - ns K/mW - Valid provided that electrodes are kept at ambient temperature. VRF =2V 2nF 60 5K ~ ~ ~ Rectification Efficiency Measurement Circuit SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 Vo LL4148 Forward characteristics Dynamic forward resistance versus forward current LL 4148 LL 4148 10 4 5 2 Tj=25 oC f=1KHz 10 3 10 2 iF 10 o Tj=100 C o Tj=25 C 10 3 rf 5 2 10 2 1 5 2 10 -1 10 5 2 10 -2 0 1 VF 2V 1 10 -2 10 -1 1 10 IF 10 2 mA Admissible power dissipation versus ambient temperature Valid provided that electrodes are kept at ambient temperature Relative capacitance versus reverse voltage mW 1000 900 800 700 600 500 400 300 200 100 0 0 100 LL 4148 LL 4148 Tj=25 oC f=1MHz 1.1 Ctot(VR) Ctot(0V) 1.0 Ptot 0.9 0.8 0.7 o 0 0 2 4 6 VR 8 10 V 200 C Tamb SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 LL4148 Leakage current versus junction temperature nA 10 4 5 2 LL 4148 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 100 Tj 200 C o Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature A 100 5 4 3 2 I v=tp/T LL 4148 T=1/fp IFRM tp t 10 IFRM v=0 5 4 3 2 T 0.1 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 15/09/2007 |
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