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LL4148 SILICON EPITAXIAL PLANAR DIODE
LL-34
fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f/50 Hz
O
Symbol VR VRM IO IFRM IFSM Ptot Tj TS
Value 75 100 150
1)
Unit V V mA mA A mW
O
Repetitive Peak Forward Current Peak Forward Surge Current at tp = 1s Power Dissipation Junction Temperature Storage Temperature Range
1)
500 2 500
1)
175 -65 to +175
C C
O
Valid provided that electrodes are kept at ambient temperature.
LL4148
Characteristics at Tj = 25 OC
Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 A Pulses Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50mA Forward Pulses tp = 0.1 s, Rise Time<30 ns, fp = 5 to 100 KHz Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
1)
Symbol VF IR IR IR V(BR)R Ctot Vfr trr RthA v
Min. -
Max. 1
Unit V
100 0.45
25 5 50 4 2.5 4 0.351) -
nA A A V pF V ns K/mW -
Valid provided that electrodes are kept at ambient temperature.
VRF =2V
2nF
60
5K
~ ~ ~
Rectification Efficiency Measurement Circuit
Vo
LL4148
Forward characteristics
Dynamic forward resistance versus forward current LL 4148 LL 4148 10 4
5 2 Tj=25 oC f=1KHz
10
3
10 2 iF 10
o Tj=100 C o Tj=25 C
10 3 rf
5 2
10 2 1
5 2
10 -1
10
5 2
10 -2 0 1 VF 2V
1 10 -2 10 -1 1 10 IF 10 2 mA
Admissible power dissipation versus ambient temperature
Valid provided that electrodes are kept at ambient temperature
Relative capacitance versus reverse voltage
mW 1000 900 800 700 600 500 400 300 200 100 0 0 100
LL 4148
LL 4148
Tj=25 oC f=1MHz
1.1 Ctot(VR) Ctot(0V) 1.0
Ptot
0.9
0.8
0.7
o
0 0 2 4 6 VR 8 10 V
200 C Tamb
LL4148
Leakage current versus junction temperature nA 10 4
5 2
LL 4148
10 3 IR
5 2
10 2
5 2
10
5
VR=20V
2
1 0 100 Tj 200 C
o
Admissible repetitive peak forward current versus pulse duration
Valid provided that electrodes are kept at ambient temperature
A 100
5 4 3 2 I v=tp/T
LL 4148
T=1/fp
IFRM
tp t
10 IFRM v=0
5 4 3 2
T
0.1 0.2
1 0.5
5 4 3 2
0.1 10 -5
2 5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp

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