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| SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS * * * * * * 8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. These values apply when the gate-cathode resistance RGK = 1k These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate linearly to zero at 110C. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. This value applies for a maximum averaging time of 20 ms. Page 1 of 3 Symbol Ratings B C Unit M S N V V A A A A W W C C C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Repetitive peak reverse voltage 100 200 300 400 500 600 700 800 Continuous on-state current at (or below) 8 70C case temperature (see note2) Average on-state current (180 conduction angle) at(or below) 70C case temperature 5 (see Note3) Surge on-state current (see Note4) 80 Peak positive gate current (pulse width 3 300 s) Peak power dissipation (pulse width 300 5 s) Average gate power dissipation (see 1 Note5) Operating case temperature range -40 to +110 Storage temperature range -40 to +125 Lead temperature 1.6 mm from case for 10 230 seconds SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S THERMAL CHARACTERISTICS Symbol tgt tq RJC RJA Gate-controlled Turn-on time Circuit-communicated Turn-off time Ratings VAA = 30 V, RL = 6 , RGK(eff) = 100 , Vin = 20 V VAA = 30 V, RL = 6 , IRM 10 A Value 0.8 Unit s 11 3 62.5 C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol IDRM IRRM IGT Ratings Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Test Condition(s) VD = Rated VDRM, RGK = 1 k, TC = 110C VR = Rated VRRM, IG = 0, TC = 110C VAA = 6 V, RL = 100 , tp(g) 20s VAA = 6 V, RL = 100 , RGK = 1 k, tp(g) 20s, TC = -40C VAA = 6 V, RL = 100 , RGK = 1 k, tp(g) 20s, VAA = 6 V, RL = 100 , RGK = 1 k, tp(g) 20s, TC = 110C VAA = 6 V, RGK = 1 k, initiating IT = 100 mA VAA = 6 V, RGK = 1 k, initiating IT = 100 mA, TC = -40C ITM = 8A (see Note6) VD = Rated VD, TC = 110C Min Typ Mx Unit 0.2 5 0.8 100 2 2 20 2.5 1.5 40 mA 70 1.7 V V/s V mA mA mA VGT Gate trigger voltage IH Holding current VTM dv/dt Peak on-state voltage Critical rate of rise of off-state voltage Note 6: This parameters must be measured using pulse techniques, tW = 300s, duty cycle 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body. Page 2 of 3 SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S MECHANICAL DATA CASE TO-220 Pin 1 : Pin 2 : Pin 3 : kathode Anode Gate Page 3 of 3 |
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