View APTDC40H601G_4554725.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTDC40H601G
SiC Diode Full Bridge Power Module
3 CR1 5 6 CR2 CR4
* * * Benefits * * * * * * * All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration
VRRM = 600V IF = 40A @ Tc = 80C
4 CR3 1 2
Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers
Features
7
8
9 10
Absolute maximum ratings
Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 s Max ratings 600 TC = 80C TC = 25C 40 500 Unit V A
APTDC40H601G - Rev 0 February, 2009
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-3
APTDC40H601G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic VF IRM QC C Diode Forward Voltage Maximum Reverse Leakage Current Total Capacitive Charge Total Capacitance Test Conditions Tj = 25C IF = 40A Tj = 175C Tj = 25C VR = 600V Tj = 175C IF = 40A, VR = 300V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Typ 1.6 2 200 400 56 260 200 Max 1.8 2.4 800 4000 Unit V A nC pF
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.8 175 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
2-3
APTDC40H601G - Rev 0 February, 2009
APTDC40H601G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0.3 0.1 0.05 Single Pulse 0.7 0.5 0.9
0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 800 IR Reverse Current (A) 700 600 500 400 300 200 100 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800
TJ=25C TJ=125C TJ=75C TJ=175C
80
TJ=25C
IF Forward Current (A)
60
TJ=75C TJ=175C
40
TJ=125C
20
0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
1600 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1
APTDC40H601G - Rev 0 February, 2009
10 100 VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
3-3

▲Up To Search▲

Price & Availability of APTDC40H601G

	To Download APTDC40H601G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .