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| EPB018B5/B7/B9-70 ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET FEATURES * * * * * NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED " MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL NF PARAMETERS/TEST CONDITIONS EPB018B5-70 EPB018B7-70 EPB018B9-70 EPB018B5-70 Associated Gain, f = 12GHz EPB018B7-70 VDS = 2 V, IDS 15 mA EPB018B9-70 Output Power at 1dB Compression f = 12GHz f = 18GHz VDS = 3 V, IDS = 25 mA Gain at 1dB Compression f = 12GHz f = 18GHz VDS = 3 V, IDS = 25 mA Saturated Drain Current VDS = 2 V, VGS = 0 V Noise Figure, f = 12GHz VDS = 2 V, IDS 15 mA Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance VDS = 2 V, VGS = 0 V VDS = 2 V, IDS = 1.0 mA IGD = 10 uA IGS = 10 uA -3 -3 MIN TYP 0.50 0.65 0.95 13.0 12.5 11.5 15.0 15.0 14.0 11.5 45 90 -0.8 -6 -6 480* o MAX 0.60 0.80 1.20 UNITS dB Ga P1dB G1dB IDSS GM VP BVGD BVGS RTH 11.5 11.0 10.5 dB dBm dB 80 -2.5 mA mS V V V C/W 15 50 Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 5V -3V Idss 2mA 12dBm 175 C -65/175 C 285mW o o CONTINUOUS2 4V -2V 60mA 0.3mA @1dB Compression 150 C -65/150 C 240mW o o Notes: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 EPB018B5/B7/B9-70 ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET EPB018B5-70 EPB018B7-70 -S12MAG 0.019 0.036 0.050 0.063 0.074 0.081 0.085 0.088 0.093 0.096 0.094 0.093 0.091 0.088 0.087 0.083 0.071 0.071 ANG 78.9 65.2 53.6 43.6 33.1 23.4 13.9 4.7 -5.1 -16.3 -26.5 -33.1 -44.2 -55.6 -66.9 -81.1 -90.3 -97.3 -S22MAG 0.530 0.507 0.485 0.464 0.421 0.370 0.344 ANG -13.5 -28.8 -42.6 -54.2 -65.4 -78.6 -90.7 FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 -S11MAG 0.985 0.949 0.903 0.860 0.812 ANG -18.9 -38.2 -56.2 -73.6 -90.4 -S21MAG 5.754 5.495 5.137 4.914 4.726 ANG 162.0 143.9 127.2 111.8 96.9 82.4 68.6 55.4 40.9 25.7 12.8 -0.8 -16.6 -31.7 -46.4 -62.2 -75.5 -85.8 -S12MAG 0.021 0.040 0.055 0.067 0.079 0.086 0.092 0.093 0.096 0.098 0.099 0.098 0.096 0.090 0.090 0.085 ANG 77.1 63.1 50.5 39.1 28.5 17.8 7.3 -3.6 -12.9 -24.5 -33.4 -43.3 -54.9 -66.7 -78.4 -92.9 -S22MAG 0.677 0.650 0.622 0.595 0.549 0.495 0.464 ANG -13.7 -28.9 -42.7 -54.1 -65.4 -78.6 -90.5 -S21MAG 6.245 5.964 5.582 5.327 5.111 ANG 162.2 144.3 127.7 112.4 97.6 83.4 69.9 57.0 42.7 27.8 15.5 2.9 -12.5 -27.1 -41.3 -56.8 -69.5 -79.4 -95.4 S-PARAMETERS VDS = 2 V, IDS = 15 mA FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 -S11MAG 0.983 0.944 0.896 0.849 0.797 ANG -18.6 -37.5 -55.5 -72.6 -89.2 0.747 -103.7 4.799 0.691 -118.6 4.503 0.642 -132.8 4.277 0.600 -155.6 4.189 0.567 -178.3 4.012 0.534 0.515 0.555 0.596 0.592 0.597 0.619 0.670 0.668 0.708 0.757 0.743 0.726 0.747 0.709 0.683 170.3 155.6 128.7 106.0 91.3 74.3 59.2 49.9 33.0 17.3 8.2 -2.5 -21.1 -39.6 -52.6 -70.6 3.846 3.758 3.569 3.317 3.214 3.086 2.756 2.668 2.623 0.765 -104.9 4.461 0.713 -119.9 4.189 0.664 -134.3 3.982 0.621 -157.1 3.908 0.591 -179.4 3.759 0.564 0.541 0.574 0.609 0.598 0.597 0.612 0.661 0.657 0.697 0.740 0.728 0.717 0.743 0.710 0.689 169.0 153.2 126.2 103.6 88.8 71.4 55.7 46.6 29.0 13.2 4.4 -5.8 -24.4 -41.8 -53.5 -69.1 3.644 3.551 3.360 3.093 2.985 2.857 2.548 2.472 0.303 -100.7 0.271 -111.2 0.228 -126.9 0.193 -145.5 0.177 -161.2 0.137 0.114 0.141 0.158 0.134 0.136 176.3 151.4 123.9 94.5 68.1 64.0 51.0 37.8 18.7 14.7 -1.3 -39.6 -56.6 -71.3 0.411 -100.6 0.374 -108.6 0.328 -121.7 0.295 -140.0 0.266 -157.6 0.210 -174.2 0.173 0.187 0.194 167.6 139.8 109.8 89.8 89.7 68.8 56.1 40.9 36.8 21.8 -5.5 -28.1 -47.5 0.072 -102.8 0.155 0.076 -105.2 0.183 0.069 -115.9 0.169 2.381 -102.1 0.076 -126.2 0.221 2.286 -118.1 0.071 -141.6 0.240 2.173 -131.8 0.068 -155.3 0.221 2.067 -145.9 0.070 -167.9 0.210 1.958 -164.5 0.071 1.807 1.757 1.759 176.3 161.7 145.4 0.071 0.075 0.084 172.5 151.8 138.3 124.1 0.188 0.154 0.174 0.152 2.551 -111.1 0.064 -131.4 0.172 2.447 -125.1 0.061 -144.1 0.159 2.325 -139.4 0.063 -159.2 0.135 2.224 -158.5 0.065 2.063 -178.1 0.067 2.024 2.006 167.9 150.2 0.072 0.083 179.4 158.8 144.7 132.8 0.115 0.102 0.136 0.117 NOISE-PARAMETERS EPB018B7-70 FREQ (GHz) 2 4 6 8 10 12 14 16 18 20 22 24 26 VDS = 2 V, IDS = 15 mA Nfmin (dB) 0.37 0.43 0.48 0.55 0.61 0.68 0.89 1.10 1.30 1.45 1.69 1.83 2.05 Rn/50 0.26 0.22 0.16 0.11 0.08 0.08 0.18 0.29 0.45 0.55 0.61 0.59 0.40 Gamma Opt MAG ANG 0.76 25 0.65 56 0.51 84 0.41 118 0.26 159 0.26 -144 0.32 -82 0.40 -46 0.40 -26 0.51 8 0.41 27 0.48 75 0.52 108 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 EPB018B5/B7/B9-70 ISSUED 11/01/2007 Super Low Noise High Gain Heterojunction FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 |
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