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1.2V Drive Pch MOSFET
RZM002P02
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
VMT3
Features 1) High Speed Switching. 2) Small package (VMT3). 3) Ultra Low Voltage drive. (1.2V drive)
(1)Gate (2)Source (3)Drain
(3)
0.2
0.22
(1)(2)
0.8 1.2
0.4 0.4 0.8 0.13 0.5
Abbreviated symbol : YK
Applications Switching
Inner circuit
(3)
Packaging specifications
Package Type RZM002P02
(2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
Taping T2L 8000
(1) 1
2
Code Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits -20 10 200 800 -100 -800 150 150 -55 to +150
Unit V V mA mA mA mA mW C C
Thermal resistance
Parameter Channel to ambient
Each terminal mounted on a recommended land
Symbol Rth(ch-a)
Limits 833
Unit C/W
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0.2
1.2 0.32
1/4
2009.06 - Rev.B
RZM002P02
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 IDSS Zero gate voltage drain current - Gate threshold voltage VGS (th) -0.3 - - Static drain-source on-state - RDS (on) resistance - - Yfs 0.2 Forward transfer admittance - Ciss Input capacitance Coss - Output capacitance Crss - Reverse transfer capacitance - td (on) Turn-on delay time Rise time tr - td (off) Turn-off delay time - Fall time - tf Qg - Total gate charge Gate-source charge Qgs - Gate-drain charge Qgd -
Pulsed
Data Sheet
Typ. - - - - 0.8 1.0 1.3 1.6 2.4 - 115 10 6 6 4 17 17 1.4 0.3 0.3
Max. 10 - -1 -1.0 1.2 1.5 2.2 3.5 9.6 - - - - - - - - - - -
Unit A V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS= 10V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -100uA ID= -200mA, VGS= -4.5V ID= -100mA, VGS= -2.5V ID= -100mA, VGS= -1.8V ID= -40mA, VGS= -1.5V ID= -10mA, VGS= -1.2V VDS= -10V, ID= -200mA VDS= -10V VGS= 0V f=1MHz VDD -10V ID= -100mA VGS= -4.5V RL 100 RG= 10
VDD -10V, ID= -200mA VGS= -4.5V RL 50, RG= 10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -200mA, VGS=0V
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2/4
2009.06 - Rev.B
RZM002P02
Electrical characteristic curves
0.2 VGS= -10.0V VGS= -4.5V VGS= -3.2V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 0.2 VGS= -4.5V 0.15 VGS= -2.5V VGS= -1.8V VGS= -1.5V VGS= -1.2V Ta=25C Pulsed DRAIN CURRENT : -ID [A] 1 V = -10V DS Pulsed 0.1 Ta= 125C 0.01 Ta= 75C Ta= 25C Ta= - 25C
Data Sheet
DRAIN CURRENT : -ID [A]
0.15
0.1 VGS= -1.5V 0.05 VGS= -1.2V 0 0 0.2 0.4 0.6
VGS= -2.5V VGS= -2.0V VGS= -1.8V
0.1
0.05 VGS= -1.0V 0
0.001
VGS= -1.0V
0.0001 0 2 4 6 8 10 0 0.5 1 1.5
0.8
1
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m]
10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
Ta=25C Pulsed
10000
VGS= -4.5V Pulsed
10000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -2.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.001 0.01 0.1 1
1000
1000
100 0.001
0.01
0.1
1
100 0.001
0.01
0.1
1
DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m]
10000
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m]
VGS= -1.8V Pulsed
10000
VGS= -1.5V Pulsed
10000
VGS= -1.2V Pulsed
1000
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100 0.001
0.01
0.1
1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
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3/4
2009.06 - Rev.B
RZM002P02
FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[] REVERSE DRAIN CURRENT : -Is [A] VDS= -10V Pulsed 1 VGS=0V Pulsed 5 Ta=25C Pulsed 4 ID = -0.2A 3 ID = -0.01A 2
Data Sheet
Ta=-25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
1
0.1 0.01
0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0 0.5 1 1.5
0 0 2 4 6 8 10
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000 td(off) SWITCHING TIME : t [ns] 100 tf
GATE-SOURCE VOLTAGE : -VGS [V]
4
CAPACITANCE : C [pF]
Ta=25C VDD = -10V VGS=-4.5V R G=10 Pulsed
5
1000
Ta=25C f=1MHz VGS=0V
Ciss
100
3
2 Ta=25C VDD = -10V ID = -0.2A R G=10 Pulsed 0 0.5 1 1.5
10
10 Coss Crss 1 0.01 0.1 1 10 100
1
tr 1 0.01
td(on) 0.1 DRAIN-CURRENT : -ID [A] 1
0
TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage
Fig.13 Switching Characteristics
Measurement circuit
Pulse width
ID VGS RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
50% 90% 10% 90% td(off) toff tf
VDS
90% td(on) ton tr
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
ID VGS RL IG (Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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4/4
2009.06 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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