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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION *High Breakdown Voltage: V(BR)CBO= 1500V(Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 7 V 6 A 16 A 3.0 W .cn mi e IC Collector Current-Continuous ICP Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 50 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4294 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 5.0 V VBE(sat) ICBO ICES Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A B 1.5 V A Collector Cutoff Current VCB= 800V; IE= 0 VCE= 1500V; RBE= 0 10 Collector Cutoff Current 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC current gain hFE-2 DC current gain VECF C-E Diode Forward Voltage Switching times tstg tf Storage Time w ww scs .i IF= 6A IC= 1A; VCE= 5V IC= 5A; VCE= 5V .cn mi e 40 8 4 130 mA 6 2.0 V 3.0 IC= 5A, IB1= 1A; IB2= -2A; VCC= 200V 0.3 s s Fall Time isc Websitewww.iscsemi.cn 2 |
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