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APT200GT60JRDQ4
600V, 200A, VCE(ON) = 2.0V Typical
Thunderbolt IGBT(R)
The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
E G C
E
Features
* Low Forward Voltage Drop * Low Tail Current * Integrated Gate Resistor Low EMI, High Reliability * RoHS Compliant * RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current
S
ISOTOP (R)
OT
22
7
"UL Recognized"
file # E145592
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
All Ratings: TC = 25C unless otherwise specified. Ratings
600 Volts 30 195 100 600 600A @ 600V 595 -55 to 150 Watts C Amps
Unit
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA) Gate Threshold Voltage (VCE = VGE, IC = 4.0mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 30V)
Min
600 3 1.6 -
Typ
4 2.0 2.5 -
Max
5
Unit
Volts 2.5 50 A 600 nA
052-6299 Rev B 5 - 2009
ICES IGES
1500
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT200GT60JRDQ4
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 200A TJ = 150C, RG = 2.2 , VGE = 15V, L = 100H, VCE= 600V Inductive Switching (25C) VCC = 400V VGE = 15V
4 5
Min 600 -
Typ 8650 546 1180 7.5 946 58 430
Max -
Unit
pF
V
Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
nC
A 72 160 952 212 9193 19290 71 157 1030 202 10460 20210 J ns J ns
IC = 200A RG = 2.2 TJ = +25C
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
Inductive Switching (125C) VCC = 400V VGE = 15V IC = 200A RG = 2.2 TJ = +125C
-
Turn-Off Switching Energy 6
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
RJC RJC WT Torque VIsolation Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Min
2500
Typ
29.2 -
Max
0.21
Unit
C/W
0.48 10 1.1 g in*lbf N*m Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
052-6299 Rev B 5 - 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
250 225 IC, COLLECTOR CURRENT (A) 200 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
APT200GT60JRDQ4
400 350 IC, COLLECTOR CURRENT (A) TJ= 150C 300 250 200 150 100 50 0 8V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 200A C T = 25C
J
V
GE
= 15V
13/15V 12V 11V
TJ= 125C
TJ= 25C TJ= 55C
10V
9V
350 300 250 200 150 100
20
IC, COLLECTOR CURRENT (A)
15
VCE = 120V
VCE = 300V 10 VCE = 480V 5
TJ= 25C 50 0 0 TJ= 125C
TJ= -55C
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
0
0
250
500 750 GATE CHARGE (nC) FIGURE 4, Gate charge
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5
4 IC = 400A 3 IC = 200A 2 IC = 100A
IC = 400A 3 2 1 0 IC = 100A IC = 200A
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 250
0
0
25
1.15
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10
IC, DC COLLECTOR CURRENT (A)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
200
150
50
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0
25
052-6299 Rev B 5 - 2009
100
Typical Performance Curves
100 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 1400 1200 1000 800 600 400 200 0
VCE = 400V RG = 2.2 L = 100H VGE =15V,TJ=125C
APT200GT60JRDQ4
80
60
VGE =15V,TJ=25C
40
VCE = 400V TJ = 25C, or 125C RG = 2.2 L = 100H
20
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 400
RG = 2.2, L = 100H, VCE = 400V
0
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 450 400
RG = 2.2, L = 100H, VCE = 400V
300 tr, RISE TIME (ns) tr, FALL TIME (ns)
350 300 250 200 150 100 50
TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V
200
100
TJ = 25 or 125C,VGE = 15V
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 40000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 35000 30000 25000 20000 15000 10000 5000 0
TJ = 25C TJ = 125C
V = 400V CE V = +15V GE R = 2.2
G
0
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 50000
V = 400V CE V = +15V GE R = 2.2
G
0
40000
TJ = 125C
30000
20000
TJ = 25C
10000
0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 60000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 2.2
G
0
Eoff,400A
Eon2,400A
80000
50000 40000
60000
Eon2,400A
Eoff,400A
30000 20000 10000 0
Eoff,200A Eon2,200A
052-6299 Rev B 5 - 2009
40000
Eoff,200A Eon2,200A
20000
Eoff,100A Eon2,100A
Eon2,100A Eoff,100A
5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
100,000 1000
APT200GT60JRDQ4
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
100
10,000
Cies
10
1,000 Coes Cres 100 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1
0.1
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.20 0.7 0.15 0.5
Note:
PDM
0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
40 FMAX, OPERATING FREQUENCY (kHz) 35 30 25 20 15 10 5 0 10
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
75C
100C
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
20
052-6299 Rev B 5 - 2009
APT200GT60JRDQ4
10% td(on) TJ = 125C tr 90% Collector Current Gate Voltage
APT100DQ60
V CC
IC
V CE
10% 5% 5%
A D.U.T.
Switching Energy
CollectorVoltage
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
TJ = 125C
90% td(off)
tf Collector Current
10%
0
CollectorVoltage
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6299 Rev B 5 - 2009
Typical Performance Curves
APT200GT60JRDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT200GT60JRDQ4
60 73 540 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125C
Min
Type
1.7 2.0 1.4
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.6 ZJC, THERMAL IMPEDANCE (C/W) 0.5 D = 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0 10-5 0.1 0.05 10
-4
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 60A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 60 95 135 3 130 722 10 140 2776 38
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 60A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3 10 -2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 24, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
052-6299 Rev A 4 - 2009
Typical Perfromance Curves
300 trr, REVERSE RECOVERY TIME (ns) 250 IF, FORWARD CURRENT (A) 200 150 100 50 0 TJ = 175C TJ = 125C 250
APT200GT60JRDQ4
T = 125C J V = 400V
R
200
150
120A
60A
30A
100
50
TJ = 25C TJ = -55C 0
4000 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
IRRM, REVERSE RECOVERY CURRENT (A)
2 4 6 8 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage
0 200 400 600 800 1000 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change 50 45 40 35 30 25 20 15 10 5 0 60A 120A 30A
T = 125C J V = 400V
R
0
3000
60A 120A
2000
1000
30A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.4 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0 Qrr 0 trr IRRM
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 140
Duty cycle = 0.5 T = 175C
120 100 80 IF(AV) (A) 60 40 20 0
J
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 450 CJ, JUNCTION CAPACITANCE (pF) 400 350 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6299 Rev A 4 - 2009
APT200GT60JRDQ4
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 32, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6299 Rev A 4 - 2009

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