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Advance Technical Information
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK320N17T2 IXFX320N17T2
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
170V 320A 5.2m 150ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C
Maximum Ratings 170 170 20 30 320 160 800 100 5 1670 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source D = Drain TAB = Drain
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C
Characteristic Values Min. Typ. Max. 170 2.5 5.0 200 V V nA
Applications Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
50 A 5 mA 5.2 m
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100188(09/09)
IXFK320N17T2 IXFX320N17T2
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 120 190 45 2890 410 1.96 46 170 115 230 640 185 175 0.09 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 160A, -di/dt = 100A/s VR = 60V, VGS = 0V 0.53 9.00 Characteristic Values Min. Typ. Max. 320 1280 1.25 150 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1. Pulse test, t 300s; duty cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK320N17T2 IXFX320N17T2
Fig. 1. Output Characteristics @ T J = 25C
320 280 240 VGS = 15V 10V 8V 7V 400 350 300 6V 6V VGS = 15V 10V 7V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
160 120 5.5V 80 40 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V
ID - Amperes
200
250 200 150 100 50 0 0 1 2 3 4 5 6 7 5V 5.5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 150C
320 280 240 VGS = 15V 10V 7V 3.4 3.0 2.6 6V
Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature
VGS = 10V
ID - Amperes
200 160 120 80 40 0 0.0 0.5 1.0 1.5 2.0 2.5
R DS(on) - Normalized
I D = 320A 2.2 1.8 1.4 1.0 0.6 0.2 I D = 160A
5V
4V
3.0
3.5
4.0
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 160A Value vs. Drain Current
3.4 3.0 2.6 2.2 1.8 1.4 TJ = 25C 1.0 0.6 0 50 100 150 200 250 300 350 400 40 20 0 -50 VGS = 10V 180 160
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit 140 TJ = 175C
R DS(on) - Normalized
120
ID - Amperes
100 80 60
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFK320N17T2 IXFX320N17T2
Fig. 7. Input Admittance
200 180 160 300 140 25C 400 TJ = - 40C 350
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
120 100 80 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TJ = 150C 25C - 40C
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
150C
180
200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
400 350 300
Fig. 10. Gate Charge
10 9 8 7 VDS = 85V I D = 160A I G = 10mA
IS - Amperes
VGS - Volts
TJ = 150C TJ = 25C
250 200 150 100 50 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
6 5 4 3 2 1 0 0 100 200 300 400 500 600 700
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100.0 1,000.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit 25s
Capacitance - NanoFarads
Ciss 100.0 10.0
External Lead Limit
100s
ID - Amperes
10.0
1ms
Coss 1.0
1.0
TJ = 175C TC = 25C Single Pulse
10ms 100ms DC
f = 1 MHz
0.1 0 5 10 15 20 25
Crss 0.1 30 35 40 1
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_320N17T2(9V)9-02-09
IXFK320N17T2 IXFX320N17T2
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature
380 340 300 RG = 1 , VGS = 10V VDS = 85V I
D
Fig. 14. Resistive Turn-on Rise Time vs. Drain Current
360 320 RG = 1 , VGS = 10V VDS = 85V 280
= 200A
t r - Nanoseconds
260 220 180 I 140 100 25 35 45 55 65 75 85 95 105 115 125
D
t r - Nanoseconds
240 200 160 120 TJ = 25C 80 40 0 40 60 80 100 120 140 160 180 200 TJ = 125C
= 100A
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance
700 240 700 600 500 400 300 200 100 0 25
Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature
220
tr
600 VDS = 85V
td(on) - - - 200
tf
VDS = 85V
td(off) - - - -
TJ = 125C, VGS = 10V
RG = 1, VGS = 10V
200 180 160
t d(on) - Nanoseconds
t d(off) - Nanoseconds
t r - Nanoseconds
500
I D = 200A
160
400 I D = 100A 300
120
t f - Nanoseconds
I D = 200A
I D = 100A
140 120 100 80 125
80
200
40
100 1 2 3 4 5 6 7 8 9 10
0
35
45
55
65
75
85
95
105
115
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Drain Current
700 600 500 220 200 180 800 700 600 500 400
Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance
800
tf
VDS = 85V
td(off) - - - I D = 200A
TJ = 125C, VGS = 10V
700
t d(off) - Nanoseconds
t f - Nanoseconds
tf
400 300 200 100 0 40 60 VDS = 85V
td(off) - - - -
RG = 1, VGS = 10V
TJ = 125C
t f - Nanoseconds
600 500 400 I D = 100A 300 200 100
t d(off) - Nanoseconds
160 140
TJ = 25C
120 100 80 200
300 200 100 1 2 3 4 5 6 7 8 9 10
80
100
120
140
160
180
ID - Amperes
RG - Ohms
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXFK320N17T2 IXFX320N17T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
0.200 0.100
.sadgsfgsf
Z (th )JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF:F_320N17T2(9V)9-02-09

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