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SEMiX302GB126HDs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 311 218 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 292 202 200 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 400 1300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V
Conditions
Values
Unit
SEMiX(R)2s
Trench IGBT Modules
SEMiX302GB126HDs
Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Preliminary Data Features
* Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532
Tj = 150 C
Typical Applications
* AC inverter drives * UPS * Electronic Welding
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 200 A Tj = 125 C RG on = 2.8 RG off = 2.8 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 14.4 0.75 0.65 1600 3.75 320 50 30 600 100 26 0.12 Tj = 25 C Tj = 125 C 5 1.7 2.00 1 0.9 3.5 5.5 5.8 0.1 2.1 2.45 1.2 1.1 4.5 6.8 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W
Remarks
* Case temperatur limited to TC=125C max. * Not for new design
Conditions
min.
typ.
max.
Unit
GB (c) by SEMIKRON Rev. 27 - 02.12.2008 1
SEMiX302GB126HDs
Characteristics Symbol Conditions
Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 200 A Tj = 125 C di/dtoff = 5900 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode per diode 18 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.045 5 5 250 0,493 5% 3550 2% 0.9 0.7 2.5 3.5
min.
typ.
1.6 1.6 1 0.8 3.0 4.0 290 55 22.5
max.
1.8 1.8 1.1 0.9 3.5 4.5
Unit
V V V V m m A C mJ
Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 rF IRRM
SEMiX(R)2s
Trench IGBT Modules
SEMiX302GB126HDs
Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w
0.19
K/W K/W nH m m K/W Nm Nm Nm g
Preliminary Data Features
* Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532
Typical Applications
* AC inverter drives * UPS * Electronic Welding
Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K
Remarks
* Case temperatur limited to TC=125C max. * Not for new design
GB 2 Rev. 27 - 02.12.2008 (c) by SEMIKRON
SEMiX302GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
(c) by SEMIKRON
Rev. 27 - 02.12.2008
3
SEMiX302GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 27 - 02.12.2008
(c) by SEMIKRON
SEMiX302GB126HDs
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
(c) by SEMIKRON
Rev. 27 - 02.12.2008
5

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