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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1291 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability Wide area of safe operation APPLICATIONS For color TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VEBO IC ICM PC Tj Tstg PARAMETER INC Collector-base voltage Emitter-base voltage E SEM ANG H OND IC CONDITIONS TOR UC VALUE 1500 5 3 13 UNIT V V A A W ae ae Open emitter Open collector Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25ae 65 130 -55~130 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD1291 SYMBOL MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 |I A 1 mA hFE DC current gain IC=2.5A ; VCE=10V 4 12 ts Storage time tf VF Fall time IC=2.5A ILeak=0.8A,LB=5|I H Diode forward voltage IN ANG CH MIC E SE IF=-4A,IB=0 DUC ON 4 TOR 8 |I 1 2.2 s |I s V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1291 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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