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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD859 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 250V(Min) *High Collector Power Dissipation APPLICATIONS *Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE 350 250 5 0.75 1.5 35 UNIT V V .cn mi e V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD859 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V ICEO Collector Cutoff Current VCE= 150V; IB= 0 1 mA ICES Collector Cutoff Current VCE= 350V; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain Switching Times ton Turn-On Time w w P 120-250 scs .i w IC= 0.3A; VCE= 10V IC= 1A; VCE= 10V .cn mi e 40 10 0.2 2.0 1 mA 250 s IC= 1A; IB1= -IB2= 0.1A s toff Turn-Off Time hFE-1 Classifications R 40-90 Q 70-150 isc Websitewww.iscsemi.cn 2 |
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