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| APT30GF60JCU2 ISOTOP(R) Boost chopper NPT IGBT SiC chopper diode K VCES = 600V IC = 30A @ Tc = 90C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch C Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Low leakage current - RBSOA and SCSOA rated G E * Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration E C K * * * G ISOTOP(R) Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Max ratings 600 45 30 100 20 154 60A@500V Unit V A V W APT30GF60JCU2 - Rev 0 September, 2009 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 90C TC = 25C TC = 25C Tj = 125C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT30GF60JCU2 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 30A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Unit A V V nA 1.7 4 2.0 2.2 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 30A RG = 6.8 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 30A RG = 6.8 VGE = 15V Tj = 125C VBus = 400V IC = 30A Tj = 125C RG = 6.8 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Test Conditions VR=600V Tj = 25C Tj = 175C Tc = 125C Min Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.2 Max Unit pF nC ns ns mJ 0.8 135 A Chopper SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Min 600 Typ 50 100 10 1.6 2 14 65 50 Max 200 2000 1.8 2.4 Unit V A APT30GF60JCU2 - Rev 0 September, 2009 A V nC pF Tj = 25C Tj = 175C IF = 10A, VR = 300V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V www.microsemi.com 2-6 APT30GF60JCU2 Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min IGBT SiC chopper Diode 2500 -55 Typ Max 0.81 2.25 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 11.8 (.463) 12.2 (.480) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Cathode Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Dimensions in Millimeters and (Inches) Emitter Gate Typical IGBT Performance Curve Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Cies Operating Frequency vs Collector Current 280 240 200 160 120 80 40 0 0 10 20 30 hard switching ZVS ZCS 1000 Coes VCE = 400V D = 50% RG = 6.8 TJ = 125C TC= 75C 100 Cres 10 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V) 40 50 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.4 0.3 0.2 0.1 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7 0.5 0.05 0 0.00001 www.microsemi.com 3-6 APT30GF60JCU2 - Rev 0 September, 2009 APT30GF60JCU2 Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) 250s Pulse Test < 0.5% Duty cycle 60 Ic, Collector Current (A) 250s Pulse Test < 0.5% Duty cycle 45 TJ=25C TJ=125C 37.5 TJ=25C 30 25 TJ=125C 15 12.5 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 80 VGE, Gate to Emitter Voltage (V) 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 30A TJ = 25C VCE=120V VCE=300V VCE=480V 4 18 250s Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) 16 14 12 10 8 6 4 2 0 0 60 40 TJ=125C TJ=25C 20 0 0 1 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 2 10 20 40 60 80 100 120 Gate Charge (nC) DC Collector Current vs Case Temperature Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 25 50 75 100 125 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (C) 1.10 1.00 0.90 0.80 TJ, Junction Temperature (C) www.microsemi.com 4-6 APT30GF60JCU2 - Rev 0 September, 2009 APT30GF60JCU2 Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 50 125 Turn-Off Delay Time vs Collector Current 40 VGE = 15V 100 VGE=15V, TJ=25C VGE=15V, TJ=125C 30 Tj = 125C VCE = 400V RG = 6.8 75 20 50 VCE = 400V RG = 6.8 10 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 40 30 20 10 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70 VGE=15V, TJ=125C VCE = 400V RG = 6.8 25 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 40 tf, Fall Time (ns) tr, Rise Time (ns) 30 20 TJ = 125C TJ = 25C 10 VCE = 400V, VGE = 15V, RG = 6.8 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70 Eoff, Turn-off Energy Loss (mJ) Turn-On Energy Loss vs Collector Current 0.5 Eon, Turn-On Energy Loss (mJ) VCE = 400V RG = 6.8 2 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 6.8 TJ = 125C 0.375 0.25 0.125 0 0 TJ=125C, VGE=15V 1.5 1 0.5 0 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 70 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 1 Switching Energy Losses (mJ) IC, Collector Current (A) Eoff, 30A 60 50 40 30 20 10 0 0 100 200 300 400 500 600 0.75 0.5 Eon, 30A 0.25 VCE = 400V VGE = 15V TJ= 125C 0 0 5 10 15 20 Gate Resistance (Ohms) 25 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APT30GF60JCU2 - Rev 0 September, 2009 APT30GF60JCU2 Typical SiC chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.5 Thermal Impedance (C/W) 2 1.5 0.5 0.9 0.7 1 0.3 0.5 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 200 IR Reverse Current (A) 160 120 80 40 0 200 TJ=175C TJ=125C TJ=75C TJ=25C 20 IF Forward Current (A) TJ=25C TJ=75C 15 10 5 0 0 0.5 TJ=175C TJ=125C 1 1.5 2 2.5 3 3.5 300 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 400 500 600 700 VR Reverse Voltage (V) 800 400 350 C, Capacitance (pF) 300 250 200 150 100 50 0 1 10 100 VR Reverse Voltage 1000 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APT30GF60JCU2 - Rev 0 September, 2009 |
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