View APTM100DA18T1G_4567115.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTM100DA18T1G
Boost chopper MOSFET Power Module
5 6 11
VDSS = 1000V RDSon = 180m typ @ Tj = 25C ID = 40A @ Tc = 25C
Application
CR1 3 4
* * *
NTC
AC and DC motor control Switched Mode Power Supplies Power Factor Correction
Features * Power MOS 8TM MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Q2 9 10 1 2
12
* * * Benefits * * * * * *
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1000 40 30 260 30 216 657 33 Unit V A V m W A
December, 2007 1-5 APTM100DA18T1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTM100DA18T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS =1000V VGS = 0V Tj = 125C VGS = 10V, ID = 33A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 500 216 5 100 Unit A m V nA
3
180 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 33A Resistive switching @ 25C VGS = 15V VBus = 667V ID = 33A RG = 2.2 Min Typ 14800 1555 196 570 100 270 85 75 285 70 ns nC Max Unit pF
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V
di/dt =200A/s
Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C
Min 1200
Typ
Max 100 500
Unit V A A
Reverse Recovery Time Reverse Recovery Charge
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 2.5 3 1.8 265 350 560 2890
3 V
ns nC
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode
Min
Typ
Max 0.19 0.9 150 125 100 4.7 80
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
www.microsemi.com
2-5
APTM100DA18T1G - Rev 0
2500 -40 -40 -40 2.5
December, 2007
Thermal and package characteristics
APTM100DA18T1G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W)
0.9
0.16
0.7
0.12
0.5
0.08 0.04
0.3 0.1 0.05
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
3-5
APTM100DA18T1G - Rev 0
Single P ulse
December, 2007
APTM100DA18T1G
Low Voltage Output Characteristics 120
VGS=10V
Low Voltage Output Characteristics 70 60 ID, Drain Current (A) 50 40 30 20 10 0
4.5V 5V TJ=125C VGS=6, 7, 8 & 9V
ID, Drain Current (A)
TJ=25C
90
60
TJ=125C
30
0 0 5 10 15 20
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V) Transfert Characteristics 60 ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C
3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=33A
50 40 30 20
TJ=25C
10 0 0 1 2 3 4 5 6
TJ, Junction Temperature (C) Gate Charge vs Gate to Source 12 VGS, Gate to Source Voltage 10 8 6 4 2 0 0 100 200 300 400 500 600
VDS=800V ID=33A TJ=25C VDS=200V
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000
Ciss
C, Capacitance (pF)
VDS=500V
10000
1000
Coss
100
Crss
10 0 50 100 150 200
December, 2007 4-5 APTM100DA18T1G - Rev 0
Gate Charge (nC)
VDS, Drain to Source Voltage (V)
www.microsemi.com
APTM100DA18T1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 150 IF, Forward Current (A) 125 100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge 6 5 4 3 2 1 0
30 A TJ=125C VR=800V
Trr vs. Current Rate of Charge
400
TJ=125C VR=800V
300
120 A
TJ=125C
200
60 A
TJ=25C
100 0 0 200 400 600
30 A
800 1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
7
50 40 30 20 10 0 0 200 400 600 800 1000 1200
-diF/dt (A/s)
TJ=125C VR=800V 120 A 60 A 30 A
120 A
60 A
0
200
400
600
800
1000 1200
-diF/dt (A/s)
Capacitance vs. Reverse Voltage 400
Max. Average Forward Current vs. Case Temp. 100 80 IF(AV) (A) 60 40 20 0
Duty Cycle = 0.5 TJ=175C
C, Capacitance (pF)
300
100
0 1 10 100 VR, Reverse Voltage (V) 1000
25
50
75
100
125
150
175
Case Temperature (C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTM100DA18T1G - Rev 0
December, 2007
200

▲Up To Search▲

Price & Availability of APTM100DA18T1G

	To Download APTM100DA18T1G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .