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APTGT200DA170D3G
Boost chopper Trench + Field Stop IGBT Power Module
3
VCES = 1700V IC = 200A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 310 200 400 20 1250 400A@1650V Unit V A V W
September, 2008 1-5 APTGT200DA170D3G - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT200DA170D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 200A Tj = 125C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 3 2.5 6.4 400 Unit mA V V nA
5.2
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=200A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 200A RG = 6.8 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 200A RG = 6.8 VGE = 15V Tj = 25C VBus = 900V Tj = 125C IC = 200A Tj = 25C RG = 6.8 Tj = 125C VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Typ 18 0.6 2.3 280 80 850 120 300 100 1000 200 58 78 43 63 800 Max Unit nF C
ns
ns
mJ
A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRRM IF VF trr Qrr Err
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 750 1000
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 200A VR = 900V
mJ
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2-5
APTGT200DA170D3G - Rev 1
di/dt =3200A/s
490 56 92 24 48
ns C
September, 2008
IF = 200A
200 1.8 1.9 385
2.2
V
APTGT200DA170D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 3500 -40 -40 -40 3 3 Min Typ Max 0.10 0.16 150 125 125 5 5 350 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D3 Package outline (dimensions in mm)
1
A
DETAIL A
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3-5
APTGT200DA170D3G - Rev 1
September, 2008
APTGT200DA170D3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 400 350 300
TJ=125C
400
TJ=25C
TJ = 125C
VGE=20V
300
IC (A) IC (A)
250 200 150
VGE=13V VGE=15V VGE=9V
200
100
100 50
0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4
0 0 1 2 3 VCE (V) 4 5
400 350 300
Transfert Characteristics
TJ=25C
Energy losses vs Collector Current 200 150
VCE = 900V VGE = 15V RG = 6.8 TJ = 125C Eon
200 150 100 50 0 5 6 7 8 VGE (V) 9
TJ=125C
TJ=125C
E (mJ)
250 IC (A)
Eoff
100 50 0
Err
10
11
0
50 100 150 200 250 300 350 400 IC (A) Reverse Bias Safe Operating Area
Switching Energy Losses vs Gate Resistance 400
VCE = 900V VGE =15V IC = 200A TJ = 125C
Eon
500 400 IC (A) 300 200 100 0
300 E (mJ)
200
100
Eoff
VGE=15V TJ=125C RG=6.8
Err
0 0 10 20 30 40 Gate Resistance (ohms) 50
0
400
800
1200
1600
2000
VCE (V)
Thermal Impedance (C/W)
IGBT
0.1 0.08 0.06 0.04 0.02 0 0.00001
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT200DA170D3G - Rev 1
September, 2008
0.12
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
APTGT200DA170D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0 50 100 150 IC (A) 200 250 300
hard switching ZVS ZCS VCE=900V D=50% RG=6.8 TJ=125C TC=75C
Forward Characteristic of diode 400 350 300 250 IF (A) 200 150 100 50 0 0 0.5 1 1.5 VF (V) 2 2.5 3
TJ=125C TJ=125C TJ=25C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02
0.7 0.5 0.3 0.1 0.05 0.9
Diode
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT200DA170D3G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
September, 2008

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