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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU1706A DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCESM VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage VALUE 1750 750 12 5 UNIT V Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak w w scs .i w V V A 8 A 3 5 100 150 -65~150 A A W .cn mi e IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0; L= 25mH IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125 VEB= 12V; IC= 0 IC= 5mA; VCE= 10V MIN 750 BU1706A TYP. MAX UNIT V 1.0 1.3 1.0 2.0 1.0 V V mA mA Switching Times Resistive Load ton ts tf Turn-On Time Storage Time Fall Time w w. w sem isc IC= 400mA; VCE= 3V IC= 1.5A; VCE= 1V IC= 1.5A; IB1= -IB2= 0.3A .cn i 12 5 8 35 1.5 6.5 1.0 s s s isc Websitewww.iscsemi.cn |
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