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| DG2012 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 ) and small physical size (SC70), the DG2012 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2012 is built on Vishay Siliconix's low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2012. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FEATURES * * * * * * Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rDS(on): 1 Typ. Fast Switching - tON: 17 ns, tOFF: 13 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-70 Package Pb-free Available RoHS* COMPLIANT BENEFITS * * * * Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space APPLICATIONS * * * * * Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-70 IN V+ GND 1 2 3 Top View Device Marking: E7xx 6 5 4 NO (Source1) COM NC (Source2) Logic 0 1 NC ON OFF NO OFF ON ORDERING INFORMATION Temp Range - 40 to 85 C Package SC70-6 Part Number DG2012DL-T1 DG2012DL-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 72176 S-70852-Rev. B, 30-Apr-07 www.vishay.com 1 DG2012 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Referenced V+ to GND IN, COM, NC, NOa Continuous Current (NO, NC and COM Pins) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (D Suffix) Power Dissipation (Packages)b 6-Pin SO70c Limit - 0.3 to + 6 - 0.3 to (V+ + 0.3) 100 300 - 65 to 150 250 Unit V mA C mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/C above 70 C. SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified V+ = 2.0 V, 10 %, VIN = 0.4 or 1.6 Ve Limits - 40 to 85 C Tempa Minb Typc Maxb Unit Parameter Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd Symbol VNO, VNC VCOM rON rON Flatness rON INO(off) INC(off) ICOM(off) Full V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room Fulld Room Room V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V Room Full Room Fulld Room Fulld Full Full Full VIN = 0 or V+ Full Room Fulld Room Fulld Room CL = 1 nF, VGEN = 0 V, RGEN = 0 , Figure 3 RL = 50 , CL = 5 pF, f = 1 MHz Room Room Room Room Room 0 2.7 2.7 V+ 5.3 5.3 3 0.25 V Switch Off Leakage Current f - 0.5 - 5.0 - 0.5 - 5.0 - 0.5 - 5.0 1.6 0.5 5.0 0.5 5.0 0.5 5.0 nA Channel-On Leakage Currentf Digital Control Input High Voltage Input Low Voltage Input Capacitanced Input Current f ICOM(on) V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V VINH VINL Cin IINL or IINH 0.4 3 -1 43 23 2 7 - 63 - 64 22 58 1 63 65 45 46 V pF A Dynamic Characteristics Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injection Off-Isolation Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced d d tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CON VNO or VNC = 1.5 V, RL = 300 , CL = 35 pF Figures 1 and 2 ns pC dB VIN = 0 or V+, f = 1 MHz pF www.vishay.com 2 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified V+ = 3 V, 10 %, VIN = 0.6 or 2.0 Ve Limits - 40 to 85 C Tempa Minb Typc Maxb Unit Parameter Analog Switch Analog Signal Ranged On-Resistance rON Flatness rON MatchFlat Switch Off Leakage Currentf Symbol VNO, VNC VCOM rON rON Flatness rON INO(off) INC(off) ICOM(off) Full V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO INC = 10 mA V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room Full Room Room V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full Room Full Room Full Full Full Full VIN = 0 or V+ Full Room Full Room Full Room CL = 1 nF, VGEN = 0 V, RGEN = 0 , Figure 3 RL = 50 , CL = 5 pF, f = 1 MHz Room Room Room Room Room 0 1.4 1.6 V+ 2.1 2.3 0.85 0.25 V - 0.5 - 5.0 - 0.5 - 5.0 - 0.5 - 5.0 2 0.5 5.0 0.5 5.0 0.5 5.0 nA Channel-On Leakage Currentf Digital Control Input High Voltage Input Low Voltage Input Capacitanced Input Currentf Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Off-Isolation Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced Power Supply Power Supply Range Power Supply Current d d ICOM(on) VINH VINL Cin IINL or IINH 0.6 3 -1 27 17 1 10 - 63 - 64 21 57 1.8 5.5 0.01 1.0 1 47 48 37 38 V pF A tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CON V+ I+ VIN = 0 or V+ VNO or VNC = 2.0 V, RL = 300 , CL = 35 pF Figures 1 and 2 ns pC dB VIN = 0 or V+, f = 1 MHz pF V A Document Number: 72176 S-70852-Rev. B, 30-Apr-07 www.vishay.com 3 DG2012 Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Test Conditions Otherwise Unless Specified V+ = 5 V, 10 %, VIN = 0.8 or 2.4 Ve Limits - 40 to 85 C Tempa Minb Typc Maxb Unit Parameter Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd Symbol VNO, VNC VCOM rON rON Flatness rON INO(off) INC(off) ICOM(off) Full V+ = 4.5 V, VCOM = 0.5 V/2.5 V INO, INC = 10 mA V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room Full Room Room V+ = 5.0 V VNO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V Room Full Room Full Room Full Full Full Full VIN = 0 or V+ Full Room Full Room Full Room CL = 1 nF, VGEN = 0 V, RGEN = 0 , Figure 3 RL = 50 , CL = 5 pF, f = 1 MHz Room Room Room Room Room 0 1.0 1.2 V+ 1.8 1.9 0.55 0.25 V Switch Off Leakage Current - 0.5 - 5.0 - 0.5 - 5.0 - 0.5 - 5.0 2.4 0.5 5.0 0.5 5.0 0.5 5.0 nA Channel-On Leakage Current Digital Control Input High Voltage Input Low Voltage Input Capacitance Input Current Dynamic Characteristics Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injection Off-Isolation Crosstalkd Source-Off Capacitanced Channel-On Capacitanced d d ICOM(on) VINH VINL Cin IINL or IINH 0.8 3 -1 17 13 1 20 - 63 - 64 20 56 1 38 39 32 33 V pF A tON tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CON VNO or VNC = 3 V, RL = 300 , CL = 35 pF Figures 1 and 2 ns pC dB VIN = 0 or V+, f = 1 MHz pF Notes: a. Room = 25 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 6 IS = 10 mA 5 r ON - On-Resistance () r ON - On-Resistance () 5 6 IS = 10 mA 4 V+ = 1.8 V 3 V+ = 2 V 2 V+ = 3 V V+ = 5 V 4 V+ = 2 V 3 85 C 25 C V+ = 3 V 85 C - 40 C 25 C - 40 C V+ = 5 V 85 C 25 C 2 1 1 - 40 C 0 0 1 2 3 4 5 0 0 1 2 3 4 5 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) rON vs. VCOM and Supply Voltage 10000 V+ = 5 V VIN = 0 V I+ - Supply Current (nA) 1000 I+ - Supply Current (A) 10 m 1m 100 10 1 100 n 10 n 1n 1 - 60 100 p - 40 - 20 0 20 40 60 80 100 10 rON vs. Analog Voltage and Temperature V+ = 3 V 100 10 100 1K 10 K 100 K 1M 10 M Temperature (C) Input Switching Frequency (Hz) Supply Current vs. Temperature 250 V+ = 5 V 200 150 Leakage Current (pA) 100 Leakage Current (pA) Supply Current vs. Input Switching Frequency 1000 V+ = 5 V T = 25 C ICOM(off) 100 50 0 - 50 - 100 - 150 INO(off)/INC(off) ICOM(on) 10 INO(off)/INC(off) ICOM(on) 1 ICOM(off) 0.1 - 60 - 200 - 250 - 40 - 20 0 20 40 60 80 100 0 1 2 3 4 5 Temperature (C) VCOM, V NO, V NC - Analog Voltage Leakage Current vs. Temperature Leakage vs. Analog Voltage Document Number: 72176 S-70852-Rev. B, 30-Apr-07 www.vishay.com 5 DG2012 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 t OFF - Switching Time (ns) 45 Loss, OIRR, XTALK (dB) 40 35 30 25 20 15 10 5 0 - 60 tON V+ = 3 V tOFF V+ = 2 V tOFF V+ = 3 V tON V+ = 5 V tOFF V+ = 5 V tON V+ = 2 V 10 0 - 10 - 20 - 30 - 40 - 50 - 60 - 70 - 80 - 90 100 K XTALK V+ = 5 V RL = 50 OIRR LOSS t ON, - 40 - 20 0 20 40 60 80 100 1M 10 M Frequency (Hz) 100 M 1G Temperature (C) Switching Time vs. Temperature and Supply Voltage 3.0 30 Insertion Loss, Off-Isolation Crosstalk vs. Frequency V T - Switching Threshold (V) 2.5 Q - Charge Injection (pC) 20 V+ = 5 V 10 V+ = 3 V 2.0 1.5 0 V+ = 2 V - 10 1.0 0.5 - 20 0.0 0 1 2 3 4 5 6 7 V+ - Supply Voltage (V) - 30 0 1 2 3 4 5 6 VCOM - Analog Voltage (v) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage www.vishay.com 6 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 DG2012 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND RL 300 CL 35 pF COM Switch Output VOUT VINH 50 % VINL tr < 5 ns tf < 5 ns 0.9 x VOUT Switch Output 0V tON tOFF CL (includes fixture and stray capacitance) VOUT = VCOM RL R L + R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Figure 1. Switching Time V+ Logic Input COM VO RL 300 CL 35 pF VINH VINL tr < 5 ns tf < 5 ns V+ VNO VNC NO NC IN GND VNC = VNO VO Switch Output 0V 90 % tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen + Vgen V+ COM IN GND NC or NO VOUT VOUT CL = 1 nF IN On VOUT Off Q = VOUT x CL On VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection Document Number: 72176 S-70852-Rev. B, 30-Apr-07 www.vishay.com 7 DG2012 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO IN COM RL V COM Off Isolation = 20 log V NO/ NC 0 V, 2.4 V GND Analyzer Figure 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72176. www.vishay.com 8 Document Number: 72176 S-70852-Rev. B, 30-Apr-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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