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HFS2N65S
Sep 2009
BVDSS = 650 V
HFS2N65S
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 (Typ.) @VGS=10V 100% Avalanche Tested
RDS(on) typ = 5.0 ID = 1.8 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
TC=25 unless otherwise specified
Parameter
Value 650
Units V A A A V mJ A mJ V/ns W W/
- Continuous (TC = 25) - Continuous (TC = 100) - Pulsed
(Note 1)
1.8* 1.1* 7.2* 30
(Note 2) (Note 1) (Note 1) (Note 3)
100 1.8 5.4 4.5 23 0.18 -55 to +150 300
Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RJC RJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 5.5 62.5 Units /W
SEMIHOW REV.A0,Sep 2009
HFS2N65S
Electrical Characteristics TC=25 C
Symbol Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 0.9 A 2.0 --5.0 4.0 6.5 V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to 25 VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 650 ------0.6 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---280 37 6.0 365 48 8.0
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note 4,5)
VDS = 325 V, ID = 1.8 A, RG = 25
--------
9 25 24 28 6.0 1.3 2.6
28 60 58 66 8.0 ---
nC nC nC
VDS = 520V, ID = 1.8 A, VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 1.8 A, VGS = 0 V IS = 1.8 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------230 1.0 1.8 7.2 1.4 --A V C
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=1.8A, VDD=50V, RG=25, Starting TJ =25C 3. ISD1.8A, di/dt200A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Sep 2009
HFS2N65S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
RDS(ON)[], Drain-Source On-Resistance
9
VGS = 10V
6
VGS = 20V
3
* Note : TJ = 25oC
0 0 1 2 3 ID, Drain Current[A] 4 5
IDR, Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
12
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
VDS = 130V
VGS, Gate-Source Voltage [V]
10
VDS = 325V VDS = 520V
Capacitances[pF]
8
6
4
2
* Note : ID = 1.8A
0
0
2
4
6
8
VDS, Drain-Source Voltage[V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Sep 2009
HFS2N65S
Typical Characteristics
(continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Note : 1. VGS = 10 V 2. ID = 0.9 A
0.9
* Note : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
2.0
Operation in This Area is Limited by R DS(on)
Figure 8. On-Resistance Variation vs Temperature
101
100 s 1 ms 10 ms 100 ms DC
1.5
ID, Drain Current [A]
100
ID, Drain Current [A]
1.0
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
0.5
10-2 0 10
101
102
103
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
101
D=0.5
ZJC(t), Thermal Response
10
0
0.2 0.1 0.05
* Notes : 1. ZJC(t) = 5.5 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10
-1
0.02 0.01 single pulse
PDM t1 t2
101
10-2 10-5 10-4 10-3 10-2 10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Sep 2009
HFS2N65S
Fig 12. Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg
10V
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS RG
RL VDD
( 0.5 rated VDS )
VDS
90%
10V
DUT
Vin
10%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS VDD ID RG DUT VDD BVDSS IAS
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD
ID (t) VDS (t)
tp
10V
Time
SEMIHOW REV.A0,Sep 2009
HFS2N65S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT + VDS _ IS L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
SEMIHOW REV.A0,Sep 2009
HFS2N65S
Package Dimension
TO-220F
0.20
.18 3 0 0.2
0.20
2.540.20 0.700.20
15.870.20
3.300.20
12.420.20
6.680.20
2.760.20
9.750.20
1.47max
0.800.20 2.54typ 2.54typ
0.500.20
SEMIHOW REV.A0,Sep 2009

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