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| LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 INFRARED EMITTING DIODES LVIR3331 DATA SHEET DOC. NO : REV. DATE : : QW0905-LVIR3331 A 18 - Oct - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331 Page 1/4 Package Dimensions 5.0 5.9 7.6 8.6 1.5MAX 25.0MIN 1/4 0.5 TYP 2.54TYP +1.0MIN Note : 1.All dimension are in millimeter tolerance is O 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LVIR3331series are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in blue transparent plastic T-1 3/4 package individually Device Selection Guide: PART NO LVIR3331 MATERIAL GaAIAs LENS COLOR Blue Transparent LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331 Page 2/4 Absolute Maximum Ratings at Ta=25 J Ratings Parameter Symbol VIR Forward Current Peak Forward Current (300PPS,1g s Pulse) Power Dissipation Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Vr Topr Tstg Tsol 50 3 100 5 UNIT mA A mW V -55 ~ +100 -55 ~ +100 Max 260J for 5 sec Max (2mm from body) J J Electrical Optical Characteristics (Aa=25J ) PARAMETER Radiant Intensity Aperture Radiant Incidence Peak Emission Wavelength Spectral Line Half Width Forward Voltage Reverse Current Viewing Angle SYMBOL Le Ee Min. 10 1.2 Typ. 17 1.6 940 50 Max. UNIT mW/sr mW/cm nm nm 2 TEST CONDITION IF=20mA IF=20mA IF=20mA IF=20mA IF=20mA VR=5V f peak f VF IR 2c 1/2 1.2 1.6 100 V g A deg 20 Note : 1.The forward voltage data did not including O 0.1V testing tolerance. 2. The radiant intensity data did not including O 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331 Page3/4 Typical Electro-Optical Characteristics Curve VIR CHIP Fig.1 Forward Current vs. DC Forward Voltage Relative Radiant Intensity Normalize @20mA 1000 Fig.2 Relative Radian Intensity vs.wavelength 1.0 Forward Current [mA] 100 10 1.0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 0.0 800 850 900 950 1000 1050 1100 Forward Voltage[V] Fig 3. Relative Radiant Power vs. Forward Peak Current 10.0 Wavelength[nm] Fig.4 Relative Radiant Power vs. Forward Peak Current 10.0 Relative Radiant Power Normalized @ 20mA Relative Radiant Power Normalized @ 100 mA 1.0 10 100 1.0 1.0 0.1 0.1 10 100 1000 IFDC[mA] IFPK[mA] Fig.5 Forward DC Voltage vs. Temperature Forw ard DC Voltage @ 20 mA Normalize @ 25 J 1.2 Fig.6 Relative Radiant Power vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Radiant Power @ 20mA, Normalize @ 25 J Ambient Temperature [ J ] Ambient Temperature [ J ] LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331 Page 4/4 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40JO 5J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65JO 5J 2.RH=90%~95% 3.t=240hrsO 2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105JO 5J &-40JO (10min) (10min) 2.total 10 cycles 5J The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260JO 5J 2.Dwell time= 10O 1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230JO 5J 2.Dwell time=5O 1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 |
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