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 P6SMB Series
Vishay General Semiconductor
Surface Mount TRANSZORB(R) Transient Voltage Suppressors
FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
VBR uni-directional VBR bi-directional PPPM PD IFSM (uni-directional only) TJ max. 6.8 V to 540 V 6.8 V to 220 V 600 W 5.0 W 100 A 150 C
DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Peak power dissipation with a 10/1000 s waveform Peak pulse current with a 10/1000 s waveform (1) Power dissipation on infinite heatsink TA = 50 C , Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(1)(2)
SYMBOL (Fig. 1) PPPM IPPM PD IFSM TJ, TSTG
VALUE 600 See next table 5.0 100 - 65 to + 150
UNIT W A W A C
Document Number: 88370 Revision: 21-Oct-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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P6SMB Series
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
GENERAL SEMICONDUCTOR PART NUMBER P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A P6SMB10A P6SMB11A P6SMB12A P6SMB13A P6SMB15A P6SMB16A P6SMB18A P6SMB20A P6SMB22A P6SMB24A P6SMB27A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB43A P6SMB47A P6SMB51A P6SMB56A P6SMB62A P6SMB68A P6SMB75A P6SMB82A P6SMB91A P6SMB100A P6SMB110A P6SMB120A P6SMB130A P6SMB150A P6SMB160A P6SMB170A P6SMB180A P6SMB200A P6SMB220A P6SMB250A P6SMB300A P6SMB350A P6SMB400A P6SMB440A P6SMB480A P6SMB510A P6SMB540A DEVICE MARKING CODE UNI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A BI 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 333 380 418 456 485 513 MAX. 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 567 TEST STAND-OFF CURRENT VOLTAGE IT VWM (mA) (V) 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 459 MAXIMUM REVERSE LEAKAGE AT VWM ID (3) (A) 1000 500 200 50 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 57.1 53.1 49.6 44.8 41.4 38.5 35.9 33.0 28.3 26.7 23.8 21.7 19.6 18.1 16.0 14.5 13.1 12.0 11.1 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 3.9 3.6 3.4 2.9 2.7 2.6 2.4 2.2 1.8 1.74 1.45 1.24 1.10 1.00 0.91 0.86 0.81 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 MAXIMUM TEMP. COEFFICIENT OF VBR (%/C) 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110
Notes: (1) Pulse test: tp 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) For bi-directional types with VWM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) VF = 3 V at IF = 50 A (uni-directional only)
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88370 Revision: 21-Oct-08
P6SMB Series
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Thermal resistance, junction to ambient air Thermal resistance, junction to leads Note: (1) Mounted on minimum recommended pad layout
(1)
SYMBOL RJA RJL
VALUE 100 20
UNIT C/W C/W
ORDERING INFORMATION (Example)
PREFERRED P/N P6SMB6.8A-E3/52 P6SMB6.8A-E3/5B P6SMB6.8AHE3/52 (1) P6SMB6.8AHE3/5B (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.096 0.096 0.096 0.096 PREFERRED PACKAGE CODE 52 5B 52 5B BASE QUANTITY 750 3200 750 3200 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
100 150
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
tr = 10 s Peak Value IPPM
10
TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM
100
Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0
1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
td - Pulse Width (s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
100
6000
75
CJ - Junction Capacitance (pF)
Measured at Zero Bias
1000
50
100
VR, Measured at Stand-Off Voltage VWM
25
Uni-Directional Bi-Directional 10
TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 100 200
0 0 25 50 75 100 125 150 175 200
1
10
TJ - Initial Temperature (C)
VWM - Reverse Stand-Off Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number: 88370 Revision: 21-Oct-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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P6SMB Series
Vishay General Semiconductor
100
200
Transient Thermal Impedance (C/W)
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave Uni-Directional Only 100
10
1.0
0.1 0.001
10 0.01 0.1 1 10 100 1000 1 10 100
tp - Pulse Duration (s)
Number of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
0.085 (2.159) MAX.
Mounting Pad Layout
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN.
0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.220 REF. 0.096 (2.44) 0.084 (2.13)
0.060 (1.52) 0.030 (0.76)
0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21)
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88370 Revision: 21-Oct-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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