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RZQ045P01
Transistors
1.5V Drive Pch MOSFET
RZQ045P01
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSMT6
1.0MAX 0.85 0.7
(1)
(2)
(3)
1pin mark 0.4 0.16
Each lead has same dimensions
Applications Switching
Abbreviated symbol : YG
Packaging specifications
Package Type RZQ045P01 Code Basic ordering unit (pieces) Taping TR 3000
Equivalent circuit
(6) (5) (4)
2
1
(1)
(2)
(3)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
1 1 2
Limits -12 10 4.5 12 -1 -12 1.25 150 -55 to +150
Unit V V A A A A W C C
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board.
Symbol Rth(ch-a)
Limits 100
Unit C / W
0.3~0.6
Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V)
2.9 1.9 0.95 0.95
(6) (5) (4)
1.6 2.8
0~0.1
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RZQ045P01
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -12 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.3 - - Static drain-source on-state RDS (on) resistance - - Forward transfer admittance Yfs 6.5 Input capacitance - Ciss Output capacitance - Coss Reverse transfer capacitance - Crss Turn-on delay time td (on) - Rise time - tr Turn-off delay time - td (off) Fall time - tf Total gate charge - Qg Gate-source charge Qgs - Gate-drain charge Qgd -
Pulsed
Typ. - - - - 25 31 39 50 - 2450 320 290 12 75 390 215 31 4.5 4.0
Max. 10 - -1 -1.0 35 43 58 100 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=10V, VDS=0V ID= -1mA, VGS=0V VDS= -12V, VGS=0V VDS= -6V, ID= -1mA ID= -4.5A, VGS= -4.5V ID= -2.2A, VGS= -2.5V ID= -2.2A, VGS= -1.8V ID= -0.9A, VGS= -1.5V VDS= -6V, ID= -4.5A VDS= -6V VGS=0V f=1MHz ID= -2.2A VDD -6V VGS= -4.5V RL 2.7 RG=10 VDD -6V RL 1.3 VGS= -4.5V RG=10 ID= -4.5A
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -4.5A, VGS=0V
2/5
RZQ045P01
Transistors
Electrical characteristic curves
10 8 6 4 -1.3V 2 0 0.0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS=-1.2V -10V -4.5V -2.5V -1.8V Ta=25 Pulsed DRAIN CURRENT : -ID[A] -1.5V -1.4V
10
10 -10V -1.6V -1.5V Ta=25 Pulsed DRAIN CURRENT : -ID[A] 1 Ta=125 Ta= 75 Ta= 25 Ta= -25
DRAIN CURRENT : -ID[A]
8
6
1.4V
4
-1.3V -1.2V
0.1
2
0.01 VDS= -6V Pulsed 0.001 0.0 0.5 1.0 1.5 2.0
VGS=-1.1V
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.1 Typical Output Characteristics()
Fig.2 Typical Output Characteristics()
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
1000 Ta=25 Pulsed 100
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
VGS= -4.5V Pulsed
100
Ta=125 Ta= 75 Ta= 25 Ta= -25
1000 VGS= -2.5V Pulsed 100 Ta=125 Ta= 75 Ta= 25 Ta= -25
10
VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 0.1 1 DRAIN-CURRENT : -ID[A] 10
10
10
1
1 0.1 1 DRAIN-CURRENT : -ID[A] 10
1 0.1 1 DRAIN-CURRENT : -ID[A] 10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
REVERSE DRAIN CURRENT : -Is [A]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
1000
1000 VGS= -1.5V Pulsed 100
100 VGS=0V Pulsed 10 Ta=125 Ta= 75 Ta= 25 Ta= -25
VGS= -1.8V Pulsed
100
1
10
Ta=125 Ta= 75 Ta= 25 Ta= -25 0.1 1 DRAIN-CURRENT : -ID[A] 10
10
Ta =125 Ta =75 Ta =25 Ta =-25
0.1
1
1 0.1 1 DRAIN-CURRENT : -ID[A] 10
0.01 0.0
0.2
0.4
0.6
0.8
1.0
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
3/5
RZQ045P01
Transistors
80 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] Ta=25 Pulsed ID= -2.2A ID= -4.5A 100 GATE-SOURCE VOLTAGE : -VGS [V] VDS=-6V Pulsed 10 Ta= -25 Ta= 25 Ta= 75 Ta= 125 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 Ta=25 VDD= -6V ID= -4.5A RG=10 Pulsed
60
40
1
20
0.1
0 0 2 4 6 8 10
0.01 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
TOTAL GATE CHARGE : Qg [nC]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.11 Forward Transfer Admittance vs. Drain Current
Fig.12 Dynamic Input Characteristics
10000 Ciss CAPACITANCE : C [pF] Ta=25C f=1MHz VGS=0V
100000 10000 1000 100 10 tr 1 0.01 0.1 1 10 100 0.01 0.1 1 tf
1000 Coss
Crss 100
SWITCHING TIME : t [ns]
td(off)
Ta=25C VDD= -6V VGS=-4.5V RG=10 Pulsed
td(on) 10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-CURRENT : -ID[A]
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Switching Characteristics
4/5
RZQ045P01
Transistors
Measurement circuits
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.15 Switching Time Measurement Circuit
Fig.16 Switching Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG(Const) D.U.T. RG VDD
Qgd
Charge
Fig.17 Gate Charge Measurement Circuit
Fig.18 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment . Please consider to design ESD protection circuit.
5/5
Appendix
Notes
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Appendix1-Rev3.0

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