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SS2H9 & SS2H10
Vishay Semiconductors
High-Voltage Surface Mount Schottky Rectifier
High Barrier Tecnology for improved high temperature performance Major Ratings and Characteristics
IF(AV) VRRM IFSM VF IR Tj max. 2.0 A 90 V, 100 V 75 A 0.65 V 10 A 175 C
DO-214AA (SMB)
Features
* * * * * * * * * Low profile package Guardring for overvoltage protection Ideal for automated placement Low power losses, high efficiency Low forward voltage drop Low leakage current High surge capability Meets MSL level 1, per J-STD-020C Solder Dip 260 C 40 seconds
Typical Applications
For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications
Maximum Ratings
Device marking code
TA = 25 C unless otherwise specified# Parameter
N ew
Pr od uc t
Mechanical Data
Symbol VRRM VRWM VDC IF(AV) IFSM IRRM dv/dt TJ, TSTG SS2H9 MS9 90 90 90 2.0 75 1.0 10000 - 65 to + 175 SS2H10 MS10 100 100 100
Case: DO-214AA (SMB) Epoxy meets UL 94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per JSTD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes the cathode end
Unit V V V A A A V/s C
Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at: TL = 130 C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current at tp = 2.0 s, 1 KHz Voltage rate of change (rated VR) Operating junction and storage temperature range
Document Number 88750 28-Jun-05
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SS2H9 & SS2H10
Vishay Semiconductors Electrical Characteristics
TA = 25 C unless otherwise specified# Parameter Maximum instantaneous forward voltage at (1): Maximum DC reverse current at rated DC blocking voltage (1) Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle Test condition IF = 2.0 A, IF = 2.0 A, TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C Symbol VF IR SS2H9 0.79 0.65 10 4 SS2H10 Unit V A mA
Thermal Characteristics
TA = 25 C unless otherwise specified Parameter Maximum thermal resistance junction to lead TL = 25 C(1) Notes: (1) Units mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas Symbol RJA RJL SS2H9 80 25 SS2H10 Unit C/W
Ratings and Characteristics Curves
(TA = 25 C unless otherwise noted)
2.5 Average Forward Current, Amp 50 75 100 125 150 175
Average Forward Current (A)
100
2.0
75
1.5
50
1.0
25
0,5
0.0 25
0 1 10 Number of Cycles at 60 Hz 100
Tl - Lead Temperature (C)
Figure 1. Forward Currenrt Derating Curve
Figure 2. Max Non-Repetitive Peak FWD Surge Current
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Document Number 88750 28-Jun-05
SS2H9 & SS2H10
Vishay Semiconductors
100 Instantaneous Forward Current (A)
Tj=175C Tj=150C
1000
10
1
Tj=125C
Junction Capacitance (pF)
100
0.1
Tj=25C
0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4
10 0.1 1 10 100 Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instanteous Forward Characteristics
Figure 5. Typical Junction Capacitance
10000 Tj=175C
Instantaneous Reverse Current (uA)
100
1000 100 10 1 0.1 0.01 0.001 10 20 30 40
Tj=150C Tj=125C Transient Impedance, C/W 80 90 100
10
Tj=25C
1 50 60 70 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t, Pulse Duration, (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance Per Leg
Package outline dimensions in inches (millimeters)
Cathode Band
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
Mounting Pad Layout
0.85 MAX (2.159 MAX)
0.180 (4.57) 0.160 (4.06)
0.012 (0.305) 0.006 (0.152)
0.086 MIN (2.18 MIN)
0.096 (2.44) 0.084 (2.13)
0.060 MIN (1.52 MIN) 0.220 REF
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
0.008(0.2)
0 (0)
Document Number 88750 28-Jun-05
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