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| SMD-Photodiode 28.01.2008 Wavelength Green Type SMD Technology GaP EPD-525-1-0.9-1 rev. 01 Case SMD 1206 Description Narrow bandwidth and high spectral sensitivity in the green visible range (500...600 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays Applications Alarm systems, light barriers, special sensors for automotive industry, for nearly V matched detectors Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of ID Operating temperature range Storage temperature range Test onditions Symbol A TCID Tamb Tstg Value 0.62 5 -20 to +85 -40 to +125 Unit mm %/K C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 1% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 ) 1) Test conditions IR = 10 A VR = 5 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 525 nm = 525 nm VR = 0 V VR = 1 V VR = 0 V Ev = 1000 lx Symbol VR ID p S min, max 0.5 RSH NEP D* CJ tr, tf IPh Min 5 Typ Max Unit V 5 525 0.3 410 70 300 4.4x10 100 35 70 -15 13 30 pA nm A/W 580 nm nm G Spectral bandwidth at 50% W/ Hz cm Hz W -1 1.8x10 pF ns nA Photocurrent at illuminant A1,2) 1) 2) for information only Standard light source with a color temperature of 2856 K Labeling Type EPD-525-1-0.9-1 *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Lot N Typ. S [A/W] Quantity SMD-Photodiode 28.01.2008 Optical responsivity (typically) 1,0 0,8 0,6 0,4 0,2 0,90 0,85 1,30 1,25 1,20 1,15 EPD-525-1-0.9-1 rev. 01 Relative Photocurrent vs. Temperature UR = 5V TK = 0,25%/K Sensitivity (arb. units) Relative Photocu rren t 1,10 1,05 1,00 0,95 0,0 400 450 500 550 600 0,80 -40 -20 0 20 40 60 80 100 120 Wavelength [nm] Temperature (C) Dark Current vs. Temperature 100 Allowable soldering profile UR = 5V TK = 1,05 times/K 10 D ark Cu rrent (p A) 1 0,1 -40 -20 0 20 40 60 80 100 120 Temperature (C) We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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