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SMD-Photodiode
20.11.2007 Wavelength Green Type SMD Technology GaP
EPD-525-1-0.9
rev. 06 Case SMD 1206
Description
2
all dim en sion s: m m all to leran ces: 0,1
pad 1,15 x 1,0
catho de
Narrow bandwidth and high spectral sensitivity in the green visible range (500...600 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling o arrays
0,5
1,2
1,6
R
0, 3
1,2
Applications
Alarm systems, light barriers, special sensors for automotive industry, for nearly V matched detectors
3,2
Miscellaneous Parameters
Tamb = 25C, unless otherwise specified Parameter Active area Temperature coefficient of ID Operating temperature range Storage temperature range Test onditions Symbol A TCID Tamb Tstg Value 0.62 5 -20 to +85 -40 to +125 Unit mm %/K C C
Optical and Electrical Characteristics
Tamb = 25C, unless otherwise specified Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 1% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 ) Photocurrent at illuminant A
1) 2)
Test conditions IR = 10 A VR = 5 V VR = 0 V VR = 0 V
1)
Symbol VR ID p S min, max 0.5 RSH NEP D* CJ tr, tf IPh
1,0
Min 5
Typ 5 525 0.3
Max 30
Unit V pA nm A/W
VR = 0 V VR = 0 V VR = 10 mV = 525 nm = 525 nm VR = 0 V VR = 1 V VR = 0 V Ev = 1000 lx
410 70 300 4.4x10 100 35 70
-15 13
580
nm nm G
Spectral bandwidth at 50%
W/ Hz
cm Hz W -1
1.8x10
pF ns nA
1,2)
for information only Standard light source with a color temperature of 2856 K
Labeling
Type EPD-525-1-0.9 *Note: All measurements carried out withEPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Lot N
Typ. S [A/W]
Quantity
SMD-Photodiode
20.11.2007 Optical responsivity (typically)
1,0 0,8 0,6 0,4 0,2 0,0 400 450 500 550 600
Relative Photocu rren t
1,30 1,25 1,20 1,15 1,10 1,05 1,00 0,95 0,90 0,85 0,80 -40 -20 0 20
EPD-525-1-0.9
rev. 06
Relative Photocurrent vs. Temperature
UR = 5V TK = 0,25%/K
Sensitivity (arb. units)
40
60
80
100
120
Wavelength [nm]
Temperature (C)
Dark Current vs. Temperature
100
Allowable soldering profile
UR = 5V TK = 1,05 times/K
10
D ark Cu rrent (p A)
1
0,1
-40
-20
0
20
40
60
80
100
120
Temperature (C)
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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