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| UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Features M/A-COM Products Released - Ver 08.07 PACKAGE OUTLINE * * * * * * N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC Rating 65 20 12* 250 200 -55 to +150 0.7 Units V V A W C C C/W TYPICAL DEVICE IMPEDANCES F (MHz) 100 300 500 ZIN () 4.5-j6.0 2.25-j1.75 1.5+j5.5 ZLOAD () 14.5+j0.5 7.5j1.0 3.5+j3.5 VDD=28V, IDQ=600 Ma, POUT =100.0 W ZIN is the series equivalent input impedance of the device from gate to gate. ZLOAD is the optimum series equivalent load impedance as measured from drain ELECTRICAL CHARACTERISTICS AT 25C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance *Per side Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP D RL VSWR-T Min 65 2.0 1.5 10 50 10 Max 3.0 3.0 6.0 135 90 24 30:1 Units V mA A V S pF pF pF dB % dB Test Conditions VGS = 0.0 V , IDS = 15.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 300.0 mA VDS = 10.0 V , IDS 3000.0 mA , VGS = 1.0V, 80 s Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz VDD = 28.0 V, IDQ = 600.0 mA, POUT = 100.0 W F =500 MHz 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Typical Broadband Performance Curves EFFICIENCY VS FREQUENCY PIN=10W IDD =600 mA (Push pull device) POPWER OUTPUT (W) M/A-COM Products Released - Ver 08.07 POWER OUTPUT VS SUPPLY VOLTAGE PIN=10 W IDQ=600 mA F=500 MHz 80 70 60 50 40 100 120 100 80 60 40 20 0 14 EFFICIENCY (%) 200 300 400 500 16 20 24 28 32 FREQUENCY (MHz) SUPPLY VOLTAGE (V) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =600 mA (Push pull device) 120 POWER OUTPUT (W) 100 80 60 40 20 0 0 1 2 4 6 8 10 12 POWER INPUT (W) 300MHz 200MHz 400MHz 500MHz 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28100H RF Power MOSFET Transistor 100W, 100-500 MHz, 28V TEST FIXTURE SCHEMATIC M/A-COM Products Released - Ver 08.07 TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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