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Photodiode Preliminary EPD-660-5-0.9 27.04.2007 rev. 02/06 Case 5 mm plastic lens Type water clear Technology AlGaAs/GaAs Wavelength Red 9 - 0,5 1,1 - 0,1 Anode 6 - 0,3 0,8 - 0,4 Description Selective photodiode mounted in standard 5 mm package without standoff . Narrow response range (660 nm peak) by means of integrated filter Note: Special packages with standoff available on request 5,3 - 0,3 2,54 2 - 1,0 31,8 - 1,7 0,6 - 0,2 Applications Optical communications, safety equipment, automation, analytics Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of ID Operating temperature range Storage temperature range Soldering Temperature Acceptance angle at 50% S t 3 s, 3 mm from case Test onditions Symbol A TC(ID) Tamb Tstg Tsld Value 0.62 5 -20 to +85 -30 to +100 260 20 Unit mm %/K C C C deg. Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at P Sensitivity range at 1% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 ) 1) Test conditions IR = 10 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 660 nm = 660 nm VR = 0 V VR = 1 V VR = 0 V Ev = 1000 lx Symbol VR ID p S min, max 0.5 RSH NEP D* CJ tr , tf IPh Min 5 Typ Max Unit V 40 660 0.42 605 80 500 600 8.5x10 50 40 1.8 -15 12 300 pA nm A/W 705 nm nm G Spectral bandwidth at 50% W/ Hz cm Hz W -1 9.2x10 pF ns A Photo-current at illuminant A1,2) 1) 2) for information only Standard light source with a color temperature of 2856 K Note: All measurements carried out with EPIGAP equipment Labeling Type EPD-660-5-0.9 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Lot N RD (typ.) [G ] Quantity 1 of 2 Photodiode Preliminary EPD-660-5-0.9 27.04.2007 rev. 02/06 Typical responsivity 1.0 1,30 1,25 1,20 1,15 Relative Photocurrent vs. Temperature UR = 5V TK = 0,25%/K rel. responsivitiy (arb. units) 0.8 0.6 0.4 0.2 R elative Photocurrent 1,10 1,05 1,00 0,95 0,90 0,85 0.0 500 550 600 650 700 750 800 0,80 -40 -20 0 20 40 60 80 100 120 Wavelength [nm] Dark Current vs. Temperature 100 Temperature (C) Short-circuit current vs. illuminance (typical) 2) UR = 5V TK = 1,05 times/K 10 10 0 Short-circuit current (A) -40 -20 0 20 40 60 80 100 120 Dark Current (pA) 10 -1 1 10 -2 10 0,1 -3 10 -4 Temperature (C) 10 -1 10 0 10 Illuminance [lx] 1 10 2 10 3 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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