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| Photodiode 19.11.2007 Wavelength Infrared Type water clear Technology AlGaAs/GaAs EPD-740-5-0.5 rev. 02 Case 5 mm plastic lens Description 9,15 1 Anode 5,75 - 0,3 0,8 - 0,4 Selective photodiode mounted in standard 5 mm package without standoff. Narrow response range (740 nm peak) by means of integrated filter Note: Special packages with standoff available on request 2,54 1,5 36,5 1,0 0,6 - 0,2 O5 Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25C, unless otherwise specified Parameter Active area Temperature coefficient of I D Operating temperature range Storage temperature range Soldering Temperature Acceptance angle at 50% S Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Parameter Breakdown voltage Dark current Peak sensitivity wavelength Responsivity at P Spectral range at 10 % Spectral bandwidth at 50% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 ) Photo-current at P 1,2) 1) 2) Test onditions Symbol A TC(ID) Tamb Tstg Value 0.17 5 -20 to +85 -30 to +100 260 20 Unit mm %/K C C C deg. t 3 s, 3 mm from case Tsld Test conditions IR = 10 A VR = 5 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 740 nm = 740 nm VR = 0 V VR = 5 V VR = 0 V Ee = 1mW/cm Symbol VR ID p S 0.5 0.5 RSH NEP D* CJ tr, tf IPh Min 5 Typ Max Unit V 1) 40 740 0.5 680 80 200 7.2x10 120 170 2,5 -15 12 200 pA nm A/W 770 nm nm G W/ Hz cm Hz W -1 5.7x10 pF ns A for information only Halogen lamp source with appropriate filter Labeling Type EPD-740-5-0.5 Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Lot N RD (typ.) [G] Quantity Photodiode 19.11.2007 EPD-740-5-0.5 rev. 02 Typical responsivity spectrum 1,0 1,04 Short-circuit current vs. ambient temperature rel. Responsivity (arb. units) Short-circuit current (arb. units) 0,8 1,00 0,6 0,4 0,96 0,2 0,0 600 650 700 750 800 850 0,92 -40 -20 0 Wavelength (nm) 20 40 Ambient temperature [C] 60 Dark Current vs. Temperature 100 Short-circuit current vs. irradiance (typical) 2) UR = 5V TK = 1,05 times/K 10 10 3 Short-circuit current (A) -40 -20 0 20 40 60 80 100 120 10 2 D ark C urrent (pA ) 10 1 1 10 0 0,1 10 -1 10 -2 Temperature (C) 10 -2 10 -1 10 2 Irradiance [mW/cm ] 0 10 1 10 2 Spectral bandwith (0.5) vs. ambient temperature 100 Typical receiving pattern 95 Response bandwith (nm) 90 85 80 75 70 -20 -10 0 10 20 30 40 Ambient temperature [C] 50 60 70 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 rel. Responsivity (a.u.) 2 of 2 |
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