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APTGT75DH60T1G
Asymmetrical - Bridge Trench + Field Stop IGBT Power Module VCES = 600V IC = 75A* @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 100* 75* 140 20 250 150A @ 550V Unit V A V W
April, 2009 1-6 APTGT75DH60T1G - Rev 0
* Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT75DH60T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE, IC = 600A VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=75A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A RG = 4.7 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A RG = 4.7 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 75A Tj = 25C RG = 4.7 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C 75 1.6 1.5 100 150 3.6 7.6 0.85 1.8 Min 600 VR=600V 250 500 2 ns C mJ
April, 2009 2-6 APTGT75DH60T1G - Rev 0
Min
Typ 1.5 1.7 5.8
Max 250 1.9 6.5 600 Max
Unit A V V nA Unit pF C
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Min Typ 4620 300 140 0.8 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6 380 ns
ns
mJ mJ A
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Typ
Max
Unit V A A V
Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
IF = 75A VGE = 0V
di/dt =2000A/s
IF = 75A VR = 300V
CR1 & CR4 are IGBT protection diodes only
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APTGT75DH60T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.60 0.98 175 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
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APTGT75DH60T1G
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTGT75DH60T1G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 150
TJ = 150C VGE=19V
150
TJ=25C
125
TJ=125C
125
TJ=150C
IC (A)
100 75 50 25 0 0 0.5 1
TJ=25C
100 IC (A) 75 50
VGE=13V VGE=15V
VGE=9V
25 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
150 125 100 75 50 25
Transfert Characteristics 5
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 4.7 TJ = 150C Eoff
4 E (mJ) 3 2
IC (A)
Er Eon
TJ=150C TJ=125C TJ=25C
1 0 11 12 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175
Eoff
0 5 6 7 8 9 10 VGE (V) Switching Energy Losses vs Gate Resistance 5 4 E (mJ) 3 2 1 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40
Er Eon VCE = 300V VGE =15V IC = 75A TJ = 150C
100
125
150
150
Eon
125 IC (A) 100 75 50 25 0 0 100 200 300 400 VCE (V) 500 600 700
VGE=15V TJ=150C RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.9
IGBT
0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 20 40 IC (A) 60 80 100
Hard switching ZVS VCE=300V D=50% RG=4.7 TJ=150C
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25
TJ=25C TJ=125C TJ=150C
Tc=85C ZCS
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W)
Diode
1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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