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| S D S ARF1505 ARF1505 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE S G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. * Specified 300 Volt, 27.12 MHz Characteristics: * Output Power = 750 Watts. * Gain = 17dB (Class C) * Efficiency > 75% * RoHS Compliant * High Performance Power RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25C unless otherwise specified. ARF1505 UNIT Volts Amps Volts Watts C MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1200 25 30 1500 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts A nA mhos Volts 1200 8 9.5 100 1000 400 5.5 TBD 3 5 6 (I D(ON) = 12.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 12.5A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Volts THERMAL CHARACTERISTICS Symbol Characteristic (per package unless otherwise noted) RJC RJHS Junction to Case Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT C/W 050-4922 Rev F 10-2008 0.10 0.16 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX ARF1505 UNIT 5400 300 125 8 5 25 13 6500 400 160 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS 1 Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 27.12 MHz VGS = 0V VDD = 300V MIN TYP MAX UNIT dB % 15 70 17 75 Pout = 750W No Degradation in Output Power Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 5000 CAPACITANCE (pf) Ciss 1000 500 Coss Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 60 ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 TJ = +25C TJ = +125C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 DATA FOR BOTH SIDES IN PARALLEL 100us 50 OPERATION HERE LIMITED BY R (ON) DS TJ = -55C 1ms 10 5 TC =+25C TJ =+200C SINGLE PULSE 050-4922 Rev F 10-2008 10ms 100ms 1 1 5 10 50 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 1.15 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 4, Typical Threshold Voltage vs Temperature 0.12 35 VGS = 10 & 9V 30 25 20 15 10 5V 5 0 7V 8V ARF1505 6V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics Z JC, THERMAL IMPEDANCE (C/W) 0.10 0.08 0.06 0.04 0.02 0 D = 0.9 0.7 0.5 0.3 0.1 0.05 10 -5 Note: PDM t1 t2 SINGLE PULSE 10 -4 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 1.0 F (MHz) TYPICAL LARGE SIGNAL INPUT - OUPUT IMPEDANCE CHARACTERISTICS 2.0 13.5 27 40 Zin () 5.4 - j 9.6 0.30 - j 1.2 0.26 + j .58 0.36 + j 1.6 Clamp ZOL () 46 - j 10.5 16.4 - j 23 4.9 - j 14.6 2.3 - j 10.3 Zin - Gate shunted with 25 ZOL - Conjugate of optimum load for 750 Watts output IDQ = 100mA Vdd = 300V 1.065 .250 S D S .500 Heat Sink Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resistance between junctions and case mounting surface is 0.10C/W. When installed, an additional thermal impedance of 0.06C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages." ARF15-BeO 1525-xx 1.065 .045 S G S .500 .005 .207 .375 .105 typ. .207 HAZARDOUS MATERIAL WARNING D G S The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 050-4922 Rev F 10-2008 A RF1505 -- 27.12 MHz Test Circ uit 300V L4 C7 C6 L2 L1 C1 RF Input C2 C3 C 11 R2 T L1 R1 V bias R3 C4 C 12 C5 C9 L3 C 8 C 10 Output C1, C7, C8, C11 .047mF 500V cerami disc C2, C12 Arco 465 75-380pF mica trimmer C3 2x 4700pF ATC 700B C4, C9-C10 8200pF 500V NPO ceramic C5 200pF ATC 100E C6 150pF ATC 700B L1 90nH 4t # 18 0.25"d .25"I L2 200nH - 3t # 8 1" dia 1"I L3 6H - 22t # 24 enam 0.5"dia L4 500nH 2t on 850 .5" bead R1-R3 1K 1/4W TL1 .112" x 1" (50) Stripline B eO ARF 1505 A RF 1500 201 135-05 J1 J2 27 MHz Amp ARF1505 R F 11-04 050-4922 Rev F 10-2008 27 MHz Amp ARF1505 R F 11-04 |
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