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D1 D3 ARF1511 D1 D3 G1 S1D2 S3D4 G2 G3 G1 S1D2 G3 ARF1511 S3D4 G4 G2 S2 G4 S4 RF POWER MOSFET FULL-BRIDGE S2 S4 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz. * High Performance Power RF Package. * Specified 380 Volt, 27.12 MHz Characteristics: * Very High Breakdown for Improved Ruggedness. * Output Power = 750 Watts. * Low Thermal Resistance. * Gain = 17dB (Class D) * Nitride Passivated Die for Improved Reliability. * RoHS Compliant MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. All Ratings: TC = 25C unless otherwise specified. ARF 1511 UNIT Volts Amps Volts Watts C 500 20 30 1500 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts A nA mhos Volts Volts 500 5 6 25 250 100 3.3 TBD 3 5 5.5 8 (I D(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 10A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) THERMAL CHARACTERISTICS Symbol Characteristic (per package unless otherwise noted) RJC RJHS Junction to Case Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT C/W 10-2008 050-4927 Rev D 0.10 0.16 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf EAR EAS Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Repetitive Avalanche Energy 2 3 ARF1511 Test Conditions VGS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 250V ID = 20A @ 25C RG = 1.6 MIN TYP MAX UNIT 1200 150 60 7 6 20 4.4 10 450 1400 200 90 pF ns mJ Single Pule Avalanche Energy FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 6:1 Test Conditions f = 40.7 MHz VGS = 0V VDD = 380V MIN TYP MAX UNIT dB % 13 15 75 Pout = 750W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 Starting Tj = +25C, L = 2.25mH, RG = 25, Peak IL = 20A Microsemi reserves the right to change, without notice, the specifications and information contained herein. D1 D3 .100 .175 D1 D3 HAZARDOUS MATERIAL WARNING G3 G1 G3 1.065" 27.05 mm S1D2 ARF1511 S3D4 .100 .075 .100 .175 G1 S1D2 S3D4 G2 G2 S2 G4 S4 .100 .075 .100 G4 .300 1.065" 27.05 mm .300 S2 S4 The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Thermal Considerations and Package Mounting: .254 .045 .005 050-4927 Rev D 10-2008 The rated 1500W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resistance between junctions and case mounting surface is 0.10C/W. When installed, an additional thermal impedance of 0.06C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages." Clamp ARF 1511 Heat Sink |
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