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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD649 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 3A *Low Saturation Voltage *Complement to Type BD650 APPLICATIONS *Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25 Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 120 100 5 8 12 0.3 2 UNIT V V V A A A PC W 62.5 150 -65~150 TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD649 MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.5 V VBE(sat) VBE(on) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 3.0 V Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VCB= 100V; IE= 0 ICBO Collector Cutoff Current VCB= 60V; IE= 0; TC= 150 0.2 mA 2.0 ICEO Collector Cutoff Current VCE= 50V; IB= 0 B 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE DC Current Gain IC= 3A ; VCE= 3V 750 isc Websitewww.iscsemi.cn 2 |
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