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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH517 DESCRIPTION *With TO-3PML package *High voltage,high speed *Low collector saturation voltage APPLICATIONS *Horizontal deflection stage in standard and high reslolution displays for TV's and monitors. *Switching power supplies for TV's and monitors. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Operating junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 700 10 8 15 5 8 60 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=10mA; IC=0 IC=5A ;IB=1.25A IC=5A ;IB=1.25A VCE=1700V; VBE=0 Tj=125 VEB=5V; IC=0 IC=5A ; VCE=5V 6 MIN 700 10 TYP. BUH517 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE MAX UNIT V V 1.5 1.3 1.0 2.0 100 V V mA A Switching times ts tf Storage time Fall time 2.7 190 3.9 280 s ns IC=5A;IB1=1.25A;IB2=2.5A; VCC=400V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.08 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH517 Fig.2 Outline dimensions 3 |
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