 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 40 10V 30 25 Vds=5V 30 4.5V Id (A) 20 Vgs=2V 10 Id (A) 2.5V 20 15 125C 10 5 25C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 0.5 1 1.5 2 2.5 Vgs (Volts) Figure 2: Transfer Characteristics 14 1.8 Normalized On-Resistance Id=9.3A 1.6 Vgs=4.5V 1.4 Vgs=10V 1.2 1 0.8 0 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature Rds(on) (m:) 13 Vgs=4.5V 12 Vgs=10V 11 10 0 5 10 15 20 25 30 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 Id=9.3A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) Is (A) 20 125C 15 25C 10 5 0 2 4 6 8 10 Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 25C FET+SCHOTTKY 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics (Note 6) 5 4 10000 Vds=15V Id=9.3A Ciss f=1MHz Vgs=0V 3 2 1 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) Vgs (Volts) 1000 Coss FET+SCHOTTKY Crss 100 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C, Ta=25C Rds(on) limited 10.0 1ms 10ms 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100 100Ps 10Ps 40 Tj(max)=150C Ta=25C 30 Power (W) Id (A) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 30 4V 25 20 10V 4.5V 3.5V 30 25 20 Vds=5V Id (A) 15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics Id (A) 125C 15 10 Vgs=3V 5 0 1 1.5 2 2.5 3 25C 3.5 4 Vgs (Volts) 1040 Figure 2: Transfer Characteristics 26 Vgs=4.5V 1.7 180 110 0.7 Id=8.3A Vgs=4.5V Vgs=10V Rds(on) (m:) 22 Normalized On-Resistance 25 30 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0 18 Vgs=10V 14 10 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (C) Figure 4: On resistance vs. Junction Temperature 60 50 Id=8.3A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) Is (A) 40 30 125C 20 25C 10 2 4 6 8 10 Vgs (Volts) Figure 5: On resistance vs. Gate-Source Voltage 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 10 8 Vds=15V Id=8.5A 1500 1250 Ciss f=1MHz Vgs=0V Capacitance (pF) Vgs (Volts) 1000 750 500 250 0 Coss 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 1040 100.0 Tj(max)=150C, Ta=25C Rds(on) limited 10Ps 100Ps 10ms 0.1s 40 180 110 0.7 Tj(max)=150C Ta=25C 30 Power (W) 1s 10s DC 10.0 1ms Id (A) 20 1.0 10 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
Price & Availability of ELM14918AA-N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |