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FGPF4633 330V PDP Trench IGBT
February 2010
FGPF4633 330V PDP IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A * High input impedance * Fast switching * RoHS compliant
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
* PDP System
GC E
TO-220F (Potted)
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1)* PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC
Ratings
330 30 300 30.5 12.2 -55 to +150 -55 to +150 300
Units
V V A W W
o o o
C C C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5sec * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
4.1 62.5
Units
o o
C/W C/W
(c)2010 Fairchild Semiconductor Corporation FGPF4633 Rev. A
1
www.fairchildsemi.com
FGPF4633 330V PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF4633
Device
FGPF4633TU
Package
TO-220F
Packaging Type
Tube
Qty per Tube
50ea
Max Qty per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
330 -
0.3 -
100 400
V V/oC A nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V IC = 70A, VGE = 15V, TC = 25oC IC = 70A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1715 75 55 pF pF pF 2.4 3.3 1.1 1.35 1.55 4.0 1.8 V V V
1.61
-
V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A VGE = 15V VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A RG = 5, VGE = 15V Resistive Load, TC = 25oC 8 30 52 260 8 32 53 341 60 8 20 ns ns ns ns ns ns ns ns nC nC nC
FGPF4633 Rev. A
2
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FGPF4633 330V PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
300
TC = 25 C
o
Figure 2. Typical Output Characteristics
300
TC = 125 C
o
15V 12V
20V
15V
250
Collector Current, IC [A]
20V
250
Collector Current, IC [A]
12V
200
10V
200 150 100
VGE = 8V 10V
150 100
VGE = 8V
50 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 7
50 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 7
Figure 3. Typical Saturation Voltage Characteristics
300 250
Collector Current, IC [A]
Common Emitter VGE = 15V TC = 25 C TC = 125 C
o
Figure 4. Transfer Characteristics
300 250
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
o
200 150 100 50 0 0
200 150 100 50 0
1 2 3 4 5 Collector-Emitter Voltage, VCE [V]
6
2
4
6 8 10 12 Gate-Emitter Voltage,VGE [V]
14
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
1.8
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
TC = 25 C
o
1.6
70A
16
1.4
12
70A
1.2
40A
8
40A
1.0
IC = 20A
4
IC = 20A
0.8 -55
-30 0 30 60 90 120 150 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF4633 Rev. A
3
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FGPF4633 330V PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
o
Figure 8. Capacitance Characteristics
3000
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
TC = 125 C
16
Capacitance [pF]
2000
Cies
12
70A
8
40A
1000
Coes
4
IC = 20A
Cres
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 0.1
1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
500
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
Collector Current, Ic [A]
VCC = 100V 200V
100
10s 100s
9
10
1ms 10 ms
6
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
DC
3
0.1
0 0 15 30 45 Gate Charge, Qg [nC] 60
0.01 0.1
1 10 100 Collector-Emitter Voltage, VCE [V]
500
Figure 11. Turn-on Characteristics vs. Gate Resistance
70
Figure 12. Turn-off Characteristics vs. Gate Resistance
500
Switching Time [ns]
tr
Switching Time [ns]
td(off)
tf
10
td(on)
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
100
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C
o o
6 0 10 20 30 40 50
Gate Resistance, RG []
40 0 10 20
TC = 125 C
30
40
50
Gate Resistance, RG []
FGPF4633 Rev. A
4
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FGPF4633 330V PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
100
Figure 14. Turn-off Characteristics vs. Collector Current
500
td(off)
Switching Time [ns]
Switching Time [ns]
tr
100
10
td(on)
tf Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C
o o
Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C
o o
3 20
30
40
50
60
70
10 20
30
40
50
60
70
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
3
Common Emitter VCC = 200V, VGE = 15V
Figure 16. Switching Loss vs. Collector Current
2 1
1
Switching Loss [mJ]
IC = 20A
Switching Loss [mJ]
TC = 25 C TC = 125 C
o
o
Eoff
Eoff
0.1
Eon Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
0.1
Eon
TC = 125 C
0.03
0
10
20
30
40
50
0.01 20
30
40
50
60
70
Gate Resistance, RG []
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
500
100
Collector Current, IC [A]
10
1
Safe Operating Area VGE = 15V, TC = 125 C
o
0.1 1 10 100 500
Collector-Emitter Voltage, VCE [V]
FGPF4633 Rev. A
5
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FGPF4633 330V PDP Trench IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
5
Thermal Response [Zthjc]
0.5
1
0.2 0.1 0.05
PDM
0.1
0.02 0.01 single pulse
t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
0.01 0.006 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
FGPF4633 Rev. A
6
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FGPF4633 330V PDP Trench IGBT
Package Dimensions
TO-220F Potted
3.30 0.10
10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
+0.10
2.76 0.20
9.40 0.20
* Front/Back Side Isolation Voltage : AC 2700V
4.70 0.20
Dimensions in Millimeters
FGPF4633 Rev. A
7
15.87 0.20
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(3 0 )
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Rev. I47
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