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FUJITSU MICROELECTRONICS DATA SHEET
DS04-27245-2E
ASSP for Power Management Applications
1 ch DC/DC Converter IC Built-in Switching FET & POWERGOOD function, PFM/PWM Synchronous Rectification, and Down Conversion Support
MB39C006A
DESCRIPTION
The MB39C006A is a current mode type 1-channel DC/ converter IC built-in switching FET, synchronous DC rectification, and down conversion support. The device is in tegrated with a switching FET, oscillator, error amplifier, PFM/PWM control circuit, reference ltage source, and POWERGOOD circuit. vo External inductor and decoupling capacitor are needed only for the external component. MB39C006A is small, achieve a highly effective DC/DC conv in the full load range, this is suitable as the erter built-in power supply for handheld equipment as mobile phone/PDA, DVDs, and HDDs. such
FEATURES
* High efficiency : 96 % (Max) Low current consumption : 30 A (at PFM) Output current (DC/DC ) : 800 mA (Max) Input voltage range : 2.5 V to 5.5 V Operating frequency : 2.0/3.2 MHz (Typ) Built-in PWM operation fixed function No flyback diode needed Low dropout operation : For 100 % on duty Built-in high-precision reference voltage generator : 1.20 V 2 % Consumption current in shutdown mode :1 A or less Built-in switching FET : P-ch MOS 0.3 (Typ) N-ch MOS 0.2 High speed for input and load transi ent response in the current mode Over temperature protection Packaged in a compact package : SON10
(Typ)
APPLICATIONS
* * * * * * Flash ROMs MP3 players Electronic dictionary devices Surveillance cameras Portable GPS navigators Mobile phones etc.
Copyright(c)2008-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8
MB39C006A
PIN ASSIGNMENT
(Top View)
VDD OUT MODE VREFIN FSEL
10
9
8
7
6
1
LX
2
GND
3
CTL
4
VREF
5
POWERGOOD
(LCC-10P-M04)
PIN DESCRIPTIONS
Pin No 1 2 3 4 5 6 7 8 9 10 Pin name LX GND CTL VREF POWERGOOD FSEL VREFIN MODE OUT VDD I I I O I O I I/O O Ground pin. Control input pin. (L : Shut Reference voltage output pin. POWERGOOD circuit output pin. Inter drain circuit. Frequency switch pin. (L (open) : 2.0 MHz, H : 3.2 MHz) Error amplifier (Error Amp) non-inverted input pin. Operation mode switch pin. (L : PFM/PWM mode, OPEN : PWM mode) Output voltage feedback pin. Power supply pin. nally connected to an N-ch MOS open down / H : Normal operation) Description Inductor connection output pi n. High impedance during shut down.
2
DS04-27245-2E
MB39C006A
I/O PIN EQUIVALENT CIRCUIT DIAGRAM
VDD
VDD
LX
VREF
GND
GND
VDD
VREFIN

OUT
GND
VDD
VDD
CTL
FSEL
GND
GND
VDD
POWER
*
MODE
GOOD
GND
*
GND
* : ESD Protection device
DS04-27245-2E
3
MB39C006A
BLOCK DIAGRAM
V
IN
10 CTL ON/OFF
VDD
3
OUT 9
x3
- +
Error Amp
VDD
POWERGOOD
5 POWERGOOD IOUT Comparator VREF 4 1.20 V V
REF
PFM/PWM Logic Control 1
LX
V
OUT
VREFIN DAC
7 Lo : PFM/PWM OPEN : PWM
MODE 8
Mode Control
6 FSEL
2
GND
4
DS04-27245-2E
MB39C006A
* Current mode * Original voltage mode type: Stabilize the output voltage by comparing items below and two on-duty control. - Voltage (V obtained through negative feedback the output voltage by Error Amp C) of - Reference triangular wave (V TRI) * Current mode type: Instead of the triangular wave (V the voltage (V TRI), IDET) obtained through I-V conversion of the sum of currents that flow in the oscillator (rectangularve generation circuit) and SW FET is used. wa Stabilize the output voltage by comparing items below and two on-duty control. - Voltage (V obtained through negative feedback the output voltage by Error Amp C) of - Voltage (V IDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular wave generation circuit) and SW FET
Voltage mode type model
VIN
Current mode type model
VIN
Oscillator
Vc VTRI Vc VIDET
S R
Q
SR-FF
Vc VTRI
VIDET Vc ton toff
toff
ton
Note : The above models illustrate the general operation an actual operation will be preferred in the IC. and
DS04-27245-2E
5
MB39C006A
FUNCTION OF EACH BLOCK
* PFM/PWM Logic control circuit In normal operation, frequency (2.0 MHz/3.2 MHz) which is by the built-in oscillator (square wave oscillation set circuit) controls the built-in P-ch MOS FET and N-ch MOS FET for the synchronous rectification operation. In the light load mode, the intermittent (PFM) operation is executed. This circuit protects against pass-through current caus synchronous rectification and against reverse ed by current caused in a non-successive operation mode. * IOUT comparator circuit This circuit detects the current (I which flows to the external inductor from the built-in P-ch MOS FET. LX) By comparing V obtained through I-V conversion of peak current I ILX with the Error Amp output, the builtIDET PK of in P-ch MOS FET is turned off via the PFM/PWM Logic Control circuit. * Error Amp phase compensation circuit This circuit compares the output voltage to reference voltages such as VREF. The MB39C006A has a built-in phase compensation circuit that designed to optimize the operation of MB39C006A. This needs neither is the to be considered nor addition of a phase compensati on circuit and an external phase compensation device. * VREF circuit A high accuracy reference voltage is generated with BGR (bandgap refere circuit. The output voltage is nce) 1.20 V (Typ). * POWERGOOD circuit The POWERGOOD circuit monitors the voltage at t OUT pin. The POWERGOOD pin is open drain output. he Use the pin with pull-up using the exter resistor in the normal operation. nal When the CTL is at the H level, the POWERGOOD pin becom the H level. However, if the output voltage drops es because of over current and etc, t POWERGOOD pin becomes the L level. he Timing chart example : (POWERGOOD pin pulled up to VIN)
VIN VUVLO
CTL
VOUT
VOUTx97 %
POWERGOOD
(pull up to VIN)
tDLYPG or less tDLYPG tDLYPG
VUVLO : UVLO threshold voltage tDLYPG : POWERGOOD delay time
6
DS04-27245-2E
MB39C006A
* Protection circuit The MB39C006A has a built-in over-temperature protection circuit. The over-temperature protection circuit turns off both and P-ch switchi FETs when the junction N-ch ng temperature reaches +135 C. When the junction temperature drops to + 110 C, the switching FET returns to the normal operation. Since the PFM/PWM control circuit of the MB39C006A is in the control method in current mode, the current peak value is also monitored and controlled as required. FUNCTION TABLE Input Output MODE Switching OUTPUT pin CTL MODE FSEL VREF POWERGOOD frequency voltage Shutdown mode PFM/PWM mode PWM fixed mode PFM/PWM mode PWM fixed mode * : Don't care 2.0 MHz 2.0 MHz 3.2 MHz 3.2 MHz H H H H OPEN OPEN L H L L L H * L * Output stop VOUT voltage output VOUT voltage output VOUT voltage output VOUT voltage output Output stop 1.2 V 1.2 V 1.2 V 1.2 V Function stop Operation Operation Operation Operation
DS04-27245-2E
7
MB39C006A
ABSOLUTE MAXIMUM RATINGS
Parameter Power supply voltage Signal input voltage POWERGOOD pull-up voltage LX voltage LX peak current I Symbol VDD V Condition VDD pin OUT pin
ISIG
Rating Min - 0.3 - 0.3 - 0.3 - 0.3 - 0.3 - 0.3
LX
Max + 6.0 V V V V
DD DD DD
Unit V V V V A
+ 0.3 + 0.3 + 0.3 + 6.0 + 0.3 1.8
1, 1, 1, 1,
CTL, MODE, FSEL pins VREFIN pin POWERGOOD pin LX pin The upper limit value of I Ta + 25 C
V
V
IPG LX PK
DD
- 40 - 55 * Power dissipation vs. Operating C to + 85 C. 2632* 980* 1053* 392*
* 2, * 3 * 2, * 4 * 2, * 3 * 2, * 4
mW mW C C
Power dissipation
P
D
Ta = + 85 Operating ambient temperature Storage temperature *1 : See " EXAMPL OF ARD N STION OPERA CTERISHA ambient temperature for the packa *2 : When mounted on a four- la Ta T
STG
C
+ 85 + 125
ge power dissipation of Ta from + 25 yer epoxy board of 11.7 cm x 8.4 cm
*3 : IC is mounted on a four-layer epoxy board, which has thermal via, and the IC's the epoxy board (Thermal via is 4 holes). *4 : IC is mounted on a four-layer epo to the epoxy board. Notes xy board, which has no thermal via,
thermal pad is connected to and the IC's thermal pad is connected
* The use of negative voltages below which can cause abnormal operation. * This device can be damaged if the LX pin * Take measures not to keep the FSEL pin falling belo possible. In addition to erroneous operation, the IC may latch up from this pin.
- 0.3 V to the GND pin may create parasitic transistors on LSI lines, is short-circuited to VDD pin or GND pin. w the GND pin potential of the MB39C006A as much as and destroy itself if 110 mA or more current flows
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute ma ximum ratings. Do not exceed these ratings.
8
DS04-27245-2E
MB39C006A
RECOMMENDED OPERATING CONDITIONS
Parameter Power supply voltage VREFIN voltage CTL voltage LX current POWERGOOD current VREF output current Inductor value I I L V V I Symbol
DD REFIN CTL LX PG
Condition 2.5 V 3.0 V fOSC1 fOSC2 V V
DD DD
Value Min 2.5 0.15 0 Typ 3.7 2.2 1.5 5.5 1.20 5.0 800 1 0.5 1 mA Max V V
Unit
V
V mA mA H
ROUT
3.0 V 5.5 V = L) = H)

= 2.0 MHz (FSEL = 3.2 MHz (FSEL
Note : The output current from this device has a situation to decrease if the power supply voltage (V the DC/DC IN) and converter output voltage OUT) differ only by a small amount. Thisa result of slope compensation and will (V is not damage this device. WARNING: The recommended operating co nditions are required in order to ensure the normal operation of the semiconductor device. All of the device's el ectrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within recommended operating condition ranges. their Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operat conditions, or combinations not represented ing on the data sheet. Users considering application outs ide the listed conditions are advised to contact their representatives beforehand.
DS04-27245-2E
9
MB39C006A
(Continued) Parameter Symbol (Ta = + 25 C, VDD Pin No. 3 * FSEL FSEL =0V = 3.7 V A = 5.5 V CTL = 3.7 V
= 3.7 V, VOUT setting value Condition Min VREFIN x3 x 0.93 0.55 0.40 - 0.8 2.96 1.176 = 5.5 V 1.200 0.95 0.80
= 2.5 V, MODE Value Typ V REFIN x3 x 0.97 250 170 1.45 1.30 1.5 - 0.4 1.224 30 1.0 0.4 0.74 V 20 1.0 1.0 48 Max x3 x 0.99 0.1 1.0 V V V
REFIN
= 0 V) Unit V s s V A
POWERGOOD VTHPG threshold voltage POWERGOOD block POWERGOOD delay time POWERGOOD output voltage POWERGOOD output current CTL threshold voltage CTL pin input current Control block MODE threshold voltage MODE pin input current FSEL threshold voltage Reference voltage block VREF voltage VREF load stability Shut down power supply current Power supply current at DC/DC operation (PFM mode) Power supply current at DC/DC operation (PWM fixed mode) Power-on invalid current
DD
tDLYPG1 tDLYPG2 V
OL
5
POWERGOOD = 250 POWERGOOD
IOH V V
THHCT THLCT
3 OPEN setting 8 MODE 6 VREF OUT VREF =0V
IICTL V V
THMMD THLMD
A V V A V V
ILMD V V V L
THHFS THLFS REF
4
OADREF
= -2.7 A, = -100 mA = -1.0 mA
mV A A A
IVDD1 IVDD1H IVDD2 10 IVDD2
CTL = 0 V, All circuits in OFF state CTL = 0 V, VDD CTL MODE OUT CTL MODE OUT FSEL CTL VOUT
OUT
General
= 3.7 V, = 0 V, =0A = 3.7 V, = OPEN, = 0 A, =0V = 3.7 V, = 90% * 4 + 0.6 V, whichever is higher.
REFIN
4.8
8.0
mA
IVDD is the 2.5 V or V
800
1500
A
*1 : The minimum value of V *2 : The *3 : Detected with respect to the
setting value
+ leak at the LX pin includes the current of the internal circuit. output voltage setting value of V % ON-duty (High side FET in full ON state). The SW FET gate drive current (no switching operation). Also the load current is not
*4 : Current consumption based on 100 is not included because the device is in full ON state included. DS04-27245-2E
11
MB39C006A
TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS
V
DD
SW R5 1 M
MB39C006A 3 CTL VDD 10
V
DD
VIN C2 4.7 F VOUT C1 4.7 F GND IOUT
SW
8
MODE OUT POWERGOOD GND
L1 1.5 H/2.2 H LX 1 9 5 2 R1 1 M
4 SW R3-1 7.5 k 6 R3-2 120 k R4 300 k 7 C6 0.1 F
VREF FSEL VREFIN
VOUT
= VREFIN
x 2.97
Component R1 R3-1 R3-2 R4 R5 C1 C2 C6 L1
Specification 1 M 7.5 k 120 k 300 k 1M 4.7 4.7 0.1 F F F
Vendor KOA SSM SSM SSM KOA TDK TDK TDK TDK TDK RK73G1JTTD D 1 M RR0816-752-D RR0816-124-D RR0816-304-D RK73G1JTTD D 1 M C2012JB1A475K C2012JB1A475K C1608JB1H104K VLF4012AT-2R2M VLF4012AT-1R5M
Part Number At VOUT
Remark
= 2.5 V setting
For adjusting slow start time 2.0 MHz operation 3.2 MHz operation
2.2 H 1.5 H
Note : These components are recommended based on the operating tests authorized. TDK : TDK Corporation SSM : SUSUMU Co., Ltd KOA : KOA Corporation
12
DS04-27245-2E
MB39C006A
APPLICATION NOTES
[1] Selection of components * Selection of an external inductor Basically it dose not need to design inductor. The MB39 C006A is designed to operate efficiently with a 2.2 H (2.0 MHz operation) or 1.5 H (3.2 MHz operation) external inductor. The inductor should be rated for a saturation current operating conditions, and should have The LX peak current value I IPK = IOUT + V
IN PK
higher than the LX peak current value during normal a minimal DC resistance. (100 m or less is recommended.)
is obtained by the following formula. D fosc x 2 1 = IOUT + (V
IN
-V L
OUT
x
-V
OUT
) xV xV
OUT IN
2 x L x fosc
L IOUT V V D
IN OUT
: External inductor value : Load current : Power supply voltage : Output setting voltage : ON- duty to be switched( = V
OUT
/V
IN
)
fosc : Switching frequency (2.0 MHz or 3.2 MHz) ex) At V IN = 3.7 V, V OUT = 2.5 V, I The maximum peak current value I IPK = IOUT + (V
IN OUT
= 0.8 A, L PK ;
OUT IN
= 2.2 H, fosc
= 2.0 MHz
-V
OUT
) xV xV
2 x L x fosc
= 0.8 A
+
(3.7 V
- 2.5 V)
x 2.5 V x 3.7 V
2 x 2.2 H x 2.0 MHz
= 0.89 A :
* I/O capacitor selection * Select a low equivalent series resistance (ESR) for the input capacitor to suppress dissipation from ripple VDD currents. * Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor current causes ripple currents on the output capacitor which, in turn, causespple voltages an output equal ri to the amount of variation multiplied by the ESR valu output capacitor value has a significant impact on e. The the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELECTRONICS generally recommends a 4.7 capacitor, or a larger capacitor F value can be used if ripple voltages are not suitable. If the V IN /V OUT voltage difference is within 0.6 V, the use of a 10 F output capacitor value is recommended. Types of capacitors Ceramic capacitors are effective for reducing the ES power supply functions as a heat generator, therefore av ( - 80% to + 20%). FUJITSU MICROELECTRONICS recommends ( 10 % to 20 %). Normal electrolytic capacitors are not recommended due to their high ESR. Tantalum capacitor will reduce ESR, however, it is damaged. If you insist on using a tantalum capacitor with an internal fuse. DS04-27245-2E R and afford smaller DC/DC converter circuit. However, oid to use capacitor with the F-temperature rating capacitors with the B-temperature rating
dangerous to use because it turns into short mode when , FUJITSU MICROELECTRONICS recommends the type
13
MB39C006A
[2] Output voltage setting age The output voltage OUT of the MB39C006A is defined by the volt input to VREFIN. Supply the voltage for V inputting to VREFIN from an external power supply, or the VREF output by dividing it with resistors. set The output voltage when the VREFIN vo ltage is set by dividing the VREF voltage with resistors is shown in the following formula. V = 2.97 (V
REF
OUT
xV
REFIN
,
V
REFIN
=
R4 R3 + R4
xV
REF
= 1.20 V)
MB39C006A
VREF R3
4
VREF
VREFIN R4
7
VREFIN
Note : See " INT APLIC CIRUT EXAMPLS rof aI xample of this cirut. A l t h o u g t h e o u t p l toa g e v i s d e f i I a c o r d i I g t o t h e d i v so tha the cur eIt iIg w flo throug the resi taIc [3] About conversion efficiency The conversion efficiency can be improved reducing the loss of the DC/DC converter circuit. by The total loss (P LOSS) of the DC/DC converter is roughly divided as follows : PLOSS = P P P P
CONT CONT
does Iot x ce d the VREF
diIg a tio r of resi taIc , sel ct the resi taIc lue a v
cur eIt tiIg a r (1 mA) .
+P
SW
+P
C
: Control system circuit loss (The power to o power for internal SW FETs) : Switching loss (The loss caused during t : Continuity loss (The loss caused when currents flow circuits )
CONT
perate the MB39C006A, including the gate driving he switch of the IC's internal SW FETs) through the IC's internal SW FETs and external
SW C
The IC's control circuit loss (P As the IC contains FETs which can switch fast as the loss during heavy-load operatio
) is extremely small, several tens of mW* with no load. er with less power, the continuity loss (P n than the control circuit loss (P CONT
C
) and switching loss (P
) is more predominant SW ) .
PK
* : The loss in the successive operation mode. This IC s in the low load mode (less than 100 flows into switching FET. The threshold value is about 30 mA. 14
uppresses the loss in order to execute the PFM operation A in no load mode). Mode is changed by the current peak value I
which
DS04-27245-2E
MB39C006A
[5] Transient response V Normally, OUT is suddenly changed whileIN and VOUT are maintained constant, responsiveness including the I response time and overshoot/undershoot voltage is chec As the MB39C006A has built-in Error Amp with ked. an optimized design, it shows good transient response characteristics. However, if ringing upon sudden change of the load is high due to the operatin g conditions, add capacitor C6 (e.g. 0.1 (Since this capacitor C6 F). changes the start time, check the start waveform as well.) This action is not required for DAC input.
MB39C006A
VREF R3
4 VREF
VREFIN C6 R4
7 VREFIN
[6] Board layout, design example The board layout needs to be designed to ensure the stable operation of the MB39C006A. Follow the procedure below for designing the layout. * Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a through hole (TH) near the pins of this capacitorthe board has planes for power and GND. if * Large AC currents flow between the MB39C006A and the input capacitor (Cin), output capacitorand O), (C external inductor (L). Group these components as close as possible to the MB39C006A to reduce the overall loop area occupied by this group. Also try to moun t these components on the same surface and arrange wiring without through hole wiring. Use thick, short, and st routes to wire the net (The layout by planes raight is recommended.). * The feedback wiring to the OUT should be wired from voltage output pin closest to the output capacitor the (CO). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of the MB39C006A as far as possible. * If applying voltage to the VREFIN pin through dividing re sistors, arrange the resistors so that the wiring can be kept as short as possible. Also arrange them so that GND pin of the VREFIN resistor is close to the the IC's GND pin. Further, provide a GND exclusively for the control line so that the re can be connected via sistor a path that does not carry current. If installing a bypass c apacitor for the VREFIN, put it close to the VREFIN pin. * Try to make a GND plane on the surface to which the MB 39C006A will be mounted. For efficient heat dissipation when using the SON 10 package, FUJITSU MICROELECT RONICS recommends providing a thermal via in the footprint of the thermal pad. Layout Example of IC SW components
1 Pin Co Vo GND L Cin VIN
Feedback line
16
DS04-27245-2E
MB39C006A
* Notes for Circuit Design * The switching operation of the MB39C006A works monitoring and controlling the peak current which, by incidentally, serves as form of short-circuit protection. However, do not leave the output short-circuited for long periods of time. If the output is short-circuited where < 2.9 V, the current limit value (peak current to the VIN inductor) tends to rise. Leaving in the short-circuit stthe temperature of the MB39C006A will continue ate, rising and activate the thermal protection. Once the thermal protection stops the output, the temperat the IC will go down and operation will resume, ure of after which the output will repeat starting and stopping. the Although this effect will not destroy t the thermal exposure to the IC he IC, over prolonged hours may affect the peripherals surrounding it.
DS04-27245-2E
17
MB39C006A
EXAMPLE OF STANDARD OPERATION CHARACTERISTICS
T Y P I C A L T I N G O P E R A T E R . I ) CS H A (Shown below is an example of characteristics for connection accordingCIRUT FOR to" TES MEASURING Conversion efficiency vs. Load current (2.0 MHz:PFM/PWM mode)
10 V
IN
Conversion efficiency vs. Load current (2.0 MHz:PFM/PWM mode)
10
=3.7V V
IN
=3 .0 V
.7 V
(%)
90 V
IN
(%)
90 V 80
IN
=3.0V V
IN
=3
80 V
=4.2V
IN
Conversion efficiency
=5.0V
70 Ta=+25C V
OUT
70
V
IN
= 4 .2 V
T a = + 2 5 C 60 V
IN
=2.5V
Conversencfiyo
60
FSEL= MODE=L 50 1 10 10
TUO
= 5 0. V
V OUT = 1.2 V F SEL = M O D E =L 10 10
OUT
10
50 1
10
L o ac du r e nI t Conversion efficiency vs. Load current (2.0 MHz:PFM/PWM mode)
10
(mA)
Load current I Conversion efficiency vs. Load current (2.0 MHz:PFM/PWM mode)
10 V
IN
(mA)
(%)
(%)
V 90 V 80
IN
IN
= 3.0 V
3.7 V
90 80 70
=3
.7 V
=
V 60 V 70 T a = + 2 5 C V 60 V 50 1
IN OUT
IN
= 4 2. V
Conversion efficiency
Conversion efficiency
IN
= 4 2. V
50 V 40 30
IN
= 5 .0 V T a = + 2 5 C V
OUT
= 1.
8V
=3
. 3V
= 5 0. V
F SEL = L M O DE = L 10 10
OUT
20 10 0
F SE L = M ODE =L 1 10 10
OUT
Load current I
(mA)
10
10
Load current I
(mA)
(Continued)
18
DS04-27245-2E
MB39C006A
Conversion efficiency vs. Load current (2.0 MHz:PWM fixed mode)
10 90 V V
IN IN
Conversion efficiency vs. Load current (2.0 MHz:PWM fixed mode)
10 90 V
=
3.7 V
IN
=
3.7 V
(%)
80 70 60
=
3.0 V
(%)
80 70 V 60 50
IN
=
3.0 V V
IN
V V = 5 0. V T a = + 2 5 C V
OUT
IN
= 4 2. V
= 4 2. V
50
Conversion efficiency
40 30 20
IN
40 30 20 10 0 V M O DE = O P E N 1 10 10
V T a = + 2 5 C
OUT
IN
= 5 0. V
= 2 5. V
10 0 1 10
F SE L = L M O DE = O P E N
= 1 2. V
Conversion ef c y
F SE L = L
10
10
TUO
10
OUT
Load cur ent I Conversion efficiency vs. Load current (2.0 MHz:PWM fixed mode)
10 90 V V
IN IN
(mA)
Load current I Conversion efficiency vs. Load current (2.0 MHz:PWM fixed mode)
10 90 V
IN
(mA)
=
3.7 V
=
3.7 V
(%)
80 70
=
3.0 V V V
IN
(%)
80 70 V 60
IN
= 4 2. V = 5 0. V 50
= 4 2. V
60 50
IN
Conversion efficiency
Conversion efficiency
40 30 20 10 0 1 10 10
OUT
40 30 20 10 0
V
IN
= 5 0. V
T a = + 2 5 C V M O DE = O P E N 10
OUT
T a = + 2 5 C V M O DE = O P E N 1 10 10
OUT
= 1.
8V
OUT
=
3. 3 V
F SE L = L
F SE L = L
10
Load current I
(mA)
Load current I
(mA) (Continued)
DS04-27245-2E
19
MB39C006A
Outputvolagevs.Inputvolage m oPdFeM)/ WH z : ( 2 . 0
2 6. 0 2 5. 8 2 5. 6 2 6. 0 2 5. 8 2 5. 6
Outputvolagevs.Inputvolage ( 3 .M 2H zP :F / Wm o d e )
(V)
(V)
2 5. 4 2 5. 2 5. 0 2 4. 8 2 5. 4 OUT = 0 A
OUT
OUT = 0 A
U TO
2 5. 2 5. 0 2 4. 8
Output vol age V
OutpuvoltaVge
2 4. 6 2 4. 2 4. 2 .40 2 .0 3. 0 4.0 V OUT = - 1 0 m A
T a = + 2 5 C
OUT
2 4. 6 2 4. 2 4. 2 4. 0 2 0. 3. 0 4.0 V OUT = - 1 0 m A
T a = + 2 5 C
OUT
= 2.5 V
= 2 5. V
F SEL = M ODE=L 5.0
IN
F SE L =H M ODE =L 5.0
NI
6.0
6.0
Input vol age V
(V)
Input vol age V
)V(
Output vol age vs. Input vol age (2.0 MHz: PW fixed mo )
2 6. 0 2 5. 8 2 5. 6 2 5. 4 2 5. 2 5. 0 OUT = 0 A 2 5. 2 5. 0 2 4. 8 2 6. 0 2 5. 8 2 5. 6
Outputvolagevs.Inputvolage (3.2 MHz: PW fixed mo )
)V(
(V)
2 5. 4
OUT = 0 A
TUO
OutputvolageV
OutputvolageV
2 4. 8 2 4. 6 2 4. 2 4. 2 4. 0 2 0. 3. 0 4.0
IN
OUT
T a = + 2 5 C V OUT = -10 m A M O DE = O P E N 5.0 6.0
OUT
2 4. 6 2 4. 2 4. 2 4. 0 2 0. 3. 0 4.0 OUT = -10 m A V
T a = + 2 5 C
OUT
= 2 5. V
= 2 5. V
F SE L =
F SE L =H M O DE = O P E N 5.0
NI
6.0
I n p u tv o l a g eV
(V)
InputvolageV
(V) (Continued)
22
DS04-27245-2E
MB39C006A
Output voltage vs. Load current (2.0 MHz)
2.60 2.60 2.58 2.56 2.56 2.58
Output voltage vs. Load current (3.2 MHz)
(V)
(V)
2.54
U TO OUT
2.54 2.5 2.50 2.48
PFM/PWM mode
2.5 2.50
PFM/PWM mode
2.48
Output vol age V
2.46 2.4
T a = + 2 5 C V V
IN OUT
OutpuvoltaVge
PWM fixed mode
2.46 2.4
PWM fixed mode
V V
T a = + 2 5 C
IN OUT
= = 2 5. V
3.7 V
= = 2 5. V
3.7 V
2.42 2.40 0 20 40
2.4 2.40 0 20 40 60
F SE L = H 800
TUO
F SE L = L 60
OUT
800
LoadcurentI
(mA)
LoadcurentI Reference voltage vs. Operating ambient temperature (2.0 MHz: PFM/PWM mode)
1.30
)Am(
Reference voltage vs. Input voltage (2.0 MHz: PFM/PWM mode)
1.30 1.28 1.26 1.26
REF
V
IN OUT
= = 2 5. V
3.7 V
(V)
(V)
1.28 V
OUT = 0 A 1.24 F SE L = L 1.2 M O DE = L 1.20 1.8 1.6 1.4 1.2
REF
1.24 1.2 1.20 1.8 1.6 OUT = 0 A
RefrncvoltageV
OUT = - 1 0 m A 1.4 1.2 1.0 2.0 3.0 4.0
NI
T a = + 2 5 C V M O DE = L 5.0 6.0
OUT
= 2 .5 V
F SEL = L 1.0
Reference voltage V
-50
0
+50
+10
Input vol age V
)V(
OperatiambietnmpratuTra( ng e
C) (Continued)
DS04-27245-2E
23
MB39C006A
Input cur ent vs. Input vol age ( P Fm Mo /d e W)
50 45 9 8 7
IN
ututners.utaeg pnI c v pnI lov (PWM fixed mo )
10
40 35
(mA)
30 25
(mA)
6 5 4
NI
20
Input cur ent I
InpucuIrent t
15 T a = + 2 5 C 10 V 5 0 2.0 3.0 4.0
NI
3 T a = + 2 5 C 2 V 1 M O DE = O P E N 0 2.0 3.0 4.0
IN
OUT
= 2 5. V
OUT
= 2 5. V
M ODE =L 5.0 6.0
5.0
6.0
I n p u tv o l a g eV Input cur ent vs. Operatingambientmprature (PFM/ W mode)
50 45 40 35
(V)
Input voltage V I n p u tc u r e n tv s . Operatiambietnmprature ng ( f P i Wm x Mo e d )
10 9 8 7
IN
(V)
(mA)
NI
30 6 5 4 25 20
InputcurentI
InpucuIrent t
V V 5 0 -50 0 M ODE=L 0 +50 +10 = = 2.5 V 1 3.7 V 2
(mA)
15
IN OUT
3 V V M O DE = O P E N -50 0 +50 +10
IN OUT
10
= = 2 5. V
3.7 V
Operating ambient temperature Ta (
C)
OperatingambientmpratureTa(
C)
(Continued)
24
DS04-27245-2E
MB39C006A
Oscillation frequency vs. Input voltage (2.0 MHz)
2.4 2.3 3.4 2. 2.1 2.0 1.9 T a = + 2 5 C 1.8 V OUT = - 2 0 m A F SE L = 1.6 2.0 3.0 4.0 5.0
IN
Oscillation frequency vs. Input voltage (3.2 MHz)
3.6
(MHz)
(MHz)
3.2 3.0
OSC2
S1C O
2.8 = 1. 8V V 2.6 2.4 6.0 2.0 3.0 4.0
T a = + 2 5 C
OUT
OUT
= 1.
8V
O s c i l a t i o nf r e q u e n c yf
O s c i l a t i fo rn e q u e n fc y
1.7
OUT = -20 m A F SEL =H 5.0
IN
6.0
I n p uv to l a gV e Oscillation frequency vs. Operating ambient temperature (2.0 MHz)
2.4 V 2.3
IN OUT
(V)
InpuvotlaVge Oscillation frequency vs. Operating ambient temperature (3.2 MHz)
3.6
(V)
= = 2 5. V
3.7 V V
IN OUT
= = 2.5 V
3.7 V
1 (MHz)
V OUT = - 2 0 m A
2 (MHz)
3.4 3.2
V OUT = -20 m A
2. 2.1 2.0
OSC
F SE L =
F SEL =H
OSC
3.0
Oscillation frequency f
1.9
Oscillation frequency f
2.6 2.4 -50 0 +50 +10
2.8
1.8 1.7 1.6
-50
0
+50
0 1+
OperatingambientmpratureTa(
C)
Operating ambient temperature Ta (
C) (Continued)
DS04-27245-2E
25
MB39C006A
MOS FET ON resistance vs. Input voltage
0 .6
P-ch MOS FET ON resistance vs. Operating ambient temperature ()
0 .6 0 .5
V
IN
( )
0 .5 P - ch 0 .4
=3.V 7
ON
ONP
0 .4
0. 3
0. 3
MOS FET ON resistance R
P-ch MOS FET ON resistance R
V 0 .2 0 .1
IN
= 5. V
0 .2 N-c h 0 .1 T a = + 2 5 C 0 .0
2.0 3.0 4.0 5.0
IN
0 .0
6.0
-50
0
+50
+100
Input voltage V N-ch MOS FET ON resistance vs. Operating ambient temperature ()
0 .6 0 .5
V
IN
(V)
Operating ambient temperature Ta (
C)
ONN
=3.V 7
0 .4 0. 3
N-ch MOS FET ON resistance R
0.2
V
IN
V =5.
0.1 0.0
-50
0
+50
+100
Operating ambient temperature Ta (
C) (Continued)
26
DS04-27245-2E
MB39C006A
(Continued) MODE V
4.0 1.4 V 3.5 1.2 V 1.0 2.5 2.0 V
THMD THLC TH C
TH
vs. Input voltage
CTL V
TH
vs. Input voltage
3.0
TH
(V)
(V) MODE V
TH
0.8 0.6 Ta=+25C 0.4 V
TUO
CTL V
1.5 1.0 0.5 V
THLMD
=2.5V
Ta=+25C V
OUT
=2.5V
0.2 0.0
V V
2.0
THHCT THLCT
: circuit OFF : circuit ON
3.0 4.0 5.0
ON OFF
6.0
IN
0.0 2.0 3.0 4.0 5.0
IN
6.0
Input voltage V Power dissipation vs. Operating ambient temperature (with thermal via)
300
2632
(V)
Input voltage V Power dissipation vs. Operating ambient temperature (without thermal via)
300
(V)
250
250
20
(mW)
(mW)
20
150
D
D
150
1053
Power dissipation P
10
Power dissipation P
980 10 392 50
50
0
Operating ambient temperature Ta (
-50
0
+50
85
0
+100
C)
Operating ambient temperature Ta (
-50
0
+50
85
C)
+100
DS04-27245-2E
27
MB39C006A
* Switching waveforms * PFM/PWM operation
VOUT : 20 mV/div (AC)
1
1 s/div
VLX : 2.0 V/div
2
ILX : 500 mA/div
4
VIN = 3.7 V, IOUT = -20 mA, VOUT = 2.5 V, MODE = L, Ta = +25 C
* PWM operation
1 s/div
VOUT: 20 mV/div (AC)
1
VLX : 2.0 V/div
2
ILX : 500 mA/div
4
VIN = 3.7 V, IOUT = -800 mA, VOUT = 2.5 V, MODE = L, Ta = +25 C
28
DS04-27245-2E
MB39C006A
* Output waveforms at sudden load changes (0 A - 800 mA)
100 s/div
VOUT : 200 mV/div
1
VLX : 2.0 V/div
2
IOUT : 1 A/div
4
-800 mA
0A VIN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 C
Output waveforms at sudden load changes (
- 20 mA
- 800 mA)
100 s/div
VOUT : 200 mV/div
1
VLX : 2.0 V/div
2
IOUT : 1 A/div
4
-800 mA
- 20 mA VIN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 C
Output waveforms at sudden load changes (
- 100 mA
- 800 mA)
100 s/div
VOUT : 200 mV/div
1
VLX : 2.0 V/div
2
IOUT : 1 A/div
4
-800 mA
- 100 mA VIN = 3.7 V, VOUT = 2.5 V, MODE = L, Ta = +25 C
DS04-27245-2E
29
MB39C006A
* CTL start-up waveform
loacapacitor) (N VREFINod,
CTL : 5 V/div
3
(M
10 s/div
3
aximumload,NoVREFIcapacitor)
10 s/div
CTL : 5 V/div
VOUT : 1 V/div
V
OUT
1
:1V/div
1
VLX : 5 V/div
2
VLX : 5 V/div
2
ILX :1 A/div
4
ILX :1 A/div
4
VIN = 3.7 V, IOUT = 0 A, VOUT = 2.5 V, MODE = L, Ta = +25 C
V
IN = 3.7V,I OUT MODE = L, Ta= +25
= -800mA,(3.125) V C
OUT
= 2.5 V,
(No l ad, VREFIN capacitor =
CTL : 5 V/div
3
0.1 F)
10 ms/div
(Maximum load, VREFIN capacitor
CTL : 5 V/div
3
= 0.1 F)
10 ms/div
VOUT : 1 V/div
V
OUT
:1V/div
1
1
VLX : 5 V/div
VLX : 5 V/div
2
2
ILX :1 A/div
4
ILX :1 A/div
4
VIN = 3.7 V, IOUT = 0 A, VOUT = 2.5 V, MODE = L, Ta = +25 C
V
IN = 3.7V,I OUT MODE = L, Ta= +25
= -800mA,(3.125) V C
OUT
= 2.5 V,
30
DS04-27245-2E
MB39C006A
* CTL stop waveform (No load, VREFIN capacitor0.1 F) =
CTL : 5 V/div
3
10 s/div
V
1
TUO
:1V/div : 5 V/div
V
2
LX
4
ILX :1 A/div V
IN = 3.7V,I TUO MODE = L, Ta= +25
= -800mA,(3.125) V C
OUT
= 2.5 V,
Current limitation waveform
V 2.5 V
OUT
10s/div V 1.5 : 1 V/div
V/div 1 :
1
V
POWERGOOD
2
1.2A l LX 1A/div :
4
600 mA
Normaoperation l
V
IN
Cur ent lim ation operation
OUT
Normal operation
= -1.2 A (2.1 ) V
OUT
=3.I V, 7
=-600 mA (4.2 )
I
OUT
= 2.5 V, MODE = L,T
a=+25 C
DS04-27245-2E
31
MB39C006A
APPLICATION CIRCUIT EXAMPLES
* APPLICATION CIRCUIT EXAMPLE 1 * An external voltage is input to the referenc e voltage external input (VREFIN) , and theOUT voltage is set to V 2.97 times as much as the OUT setting gain. V
10
VDD
CPU
C2 4.7 F
V
IN
R5 1 M
3
CTL
LX
1
V L1 2.2 H
OUT
C1 4.7 F
L=PFM/PWM mode OPEN=PWM fixed mode
OUT 8
9 APLI
MODE
POWERGOOD
5
L (OPEN) = 2.0 MHz H = 3.2 MHz
6 4
FSEL VREF VREFIN GND
2 VOUT = 2.97 x V
REFIN
DAC
7
* APPLICATION CIRCUIT EXAMPLE 2 * The voltage of VREF pin is input to the referenceltage external input (VREFIN) by the dividing resistors. vo The VOUT voltage is set to 2.5 V.
10 CPU 3 VDD
C2 4.7 F LX 1 L1 2.2 H OUT 9 5
V
IN
R5 1 M
CTL
V
OUT
C1 4.7 F
L=PFM/PWM mode OPEN=PWM fixed mode
8
MODE POWERGOOD APLI
L (OPEN) = 2.0 MHz H = 3.2 MHz R3 127.5 k R3(120 k + 7.5 k)
6
FSEL
VOUT = 2.97 x V R4 V REFIN = R3 + R4 (V REF = 1.20 V) 2 V
OUT REFIN
4 7
VREF
xV
REF
300 k
R4
VREFIN
GND
= 2.97 x
300 k 127.5 k + 300 k
x 1.20 V = 2.5 V
DS04-27245-2E
33
MB39C006A
* Application Circuit Example Components List Component Item Part Number L1 C1 C2 R3 R4 R5 Inductor Ceramic capacitor Ceramic capacitor Resistor Resistor Resistor VLF4012AT-2R2M MIPW3226D2R2M C2012JB1A475K C2012JB1A475K RK73G1JTTD D 7.5 k RK73G1JTTD D 120 k RK73G1JTTD D 300 k RK73G1JTTD D 1M 2.2 4.7 4.7
Specification 2.2 H, RDC = 76 m H, RDC = 100 m F (10 V) F (10 V) 7.5 k 120 k 300 k 0.5 %
Package SMD SMD 2012 2012 1608 1608 1608 1608 TDK TDK TDK FDK
Vendor
KOA KOA KOA
TDK : TDK Corporation FDK : FDK Corporation KOA : KOA Corporation
34
DS04-27245-2E
MB39C006A
LABELING SAMPLE (LEAD FREE VERSION)
Lead-fre mark ATIEJ og l CED J og l
MB123456P-789-GE1
(3N)1MB23456P-789-GE1 10
G
Pb
(3N)215690 1072
SS QCPA
1,0 MB123456P-789-GE1
2006/03/01
PCS
ASSEMBLED IN AN APJ
1/
MB123456P-789-GE1
065-Z1A 10
15690
Thepartnumberofalead-frepoucthas therailngcharacters"E1".
"ASSECHINA"MBLEDisolabel the n pri ted ofaproductassembledinCha.
MARKING FORMAT
INDEX
L e a d - f vr e s i o n
36
DS04-27245-2E
MB39C006A
EVALUATION BOARD SPECIFICATION
The MB39C006A Evaluation Board provides the propervironment for evaluating the efficiency and other en characteristics of the MB39C006A. * Terminal information Symbol
Functions
VIN
Power supply terminal. In standard condition 3.1 V to 5.5 V*. * When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices with a standard output voltage (VOUT2.5 V) and VIN < 3. = 1 V, FUJITSU MICROELECTRONICS recommends to change the output capacity (C1) to 10 F. Output terminal. Power supply terminal for setting the CTL terminal. Use this terminal by connecting Direct supply terminal of CTL. CTL = 0 V to 0.80 V (Typ) CTL = 0.95 V (Typ) to VIN : Shutdown : Normal operation with VIN (When SW is mounted).
VOUT VCTL CTL
MODE VREF VREFIN
Direct supply terminal of MODE. MODE = 0 V to 0.4 V (Max) : PFM/PWM mode MODE = OPEN (Remove R6) : PWM mode Reference voltage output terminal. V REF = 1.20 V (Typ) External reference voltage input terminal. When an external reference voltage is Operating frequency ra nge setting terminal. FSEL = 0 V : 2.0 MHz operation FSEL = V IN : 3.2 MHz operation* * FUJITSU MICROELECTRONICS recomme POWERGOOD output terminal. High level output when OUT voltage reaches Ground terminal. Connect power supply GND to the PGND Ground terminal. supplied, connect to this terminal.
FSEL
nds to change the inductor to 1.5 97% or more of output setting voltage. terminal next to the VOUT terminal.
H.
POWERGOOD PGND AGND
* Startup terminal information Terminal name Condition CTL L : Open H : Connect to VIN L : Open H : Connect to VIN
Functions ON/OFF switch for the IC. L : Shutdown H : Normal operation Setting switch of FSEL terminal. L : 2.0 MHz operation H : 3.2 MHz operation
FSEL
* Jumper information JP JP1 JP2 38 Normally used shorted (0 ) Not mounted
Functions
DS04-27245-2E
MB39C006A
* Setup and checkup (1) Setup (1) -1. Connect the CTL terminal to the VIN terminal. (1) -2. Connect the power supply terminal to the VI N terminal, and the power supply GND terminal to the PGND terminal. (Example of setti power supply voltage : 3.7 V) ng (2) Checkup Supply power to VIN. The IC is operating normally if VOUT V (Typ). = 2.5 Component layout on the evaluation board (Top View)
MODE JP2
VCTL
R8 VIN JP1 C2 PGND M1 L1 C1 VOUT R1 AGND R3-2 R3-1 CTL C3 R4 FSEL
SW1 OFF R6 CTL 1 FSEL 2
POWER_GOOD
VREF
VREFIN
MB39C006AEVB-06 Rev.2.0
DS04-27245-2E
39
MB39C006A
* Evaluation board layout (Top View)
Top Side (Layer1)
Inner Side (Layer2)
Inner Side(Layer 3)
Bottom Side(Layer 4)
40
DS04-27245-2E
MB39C006A
* Connection diagram
IIN
VIN JP2 SW1VCTL CTL R5 1M C2 4.7F
10
VD
L1 2.2 H LX
I UOT
VOUT
3
CTL
1
JP1 C1 4.7 F R1 1M
MB3
8
MODE
9C0 6A
OUT
9 5
POWERDGO
MODE
POWER-
R6
SW1-2 FSEL FERV R 3-1 7.5k
DGO
6 4
FSEL
VREF PGND AGND
NIFERV R4 300k
R 3-2 120k
7
C6 0.1F
NIFERV
GND
2
*
Not mounted
DS04-27245-2E
41
MB39C006A
* Component list Component Part Name M1 L1 C1 C2 C6 R1 R3-1 R3-2 R4 R5 R6 SW1 JP1 JP2 IC Inductor Ceramic capacitor Ceramic capacitor Ceramic capacitor Resister Resister Resister Resister Resister Resister DIP switch Jumper Jumper
Model Number MB39C006APN VLF4012AT-2R2M
Specification 2.2 H, RDC=76 m F (10 V) F (10 V) F (50 V) 1 M 0.5% 0.5% 0.5% 0.5% 1 M 0.5% 0 , 1A 0 , 1A
Package SON10 SMD 2012 2012 1608 1608 1608 1608 1608 1608 1608 1608 KOA TDK TDK TDK KOA SSM SSM SSM KOA KOA FML TDK
Vendor
Remark
C2012JB1A475K C2012JB1A475K C1608JB1H104K
4.7 4.7 0.1 RK73G1JTTD D 1M
RR0816P-752-D RR0816P-124-D RR0816P-304-D
7.5 k 120 k 300 k
RK73G1JTTD D 1M RK73Z1J RK73Z1J
Not mounted Not mounted
Note : These components are recommended based on the operating tests authorized. FML TDK KOA SSM : FUJITSU MICROELECTRONICS LIMITED : TDK Corporation : KOA Corporation : SUSUMU Co., Ltd
EV BOARD ORDERING INFORMATION
EV Board Part No. MB39C006AEVB-06 EV Board Version No. MB39C006AEVB-06 Rev.2.0 Remarks SON10
42
DS04-27245-2E
MB39C006A
PACKAGE DIMENSION
10-pin plasticS ON Lea P ack agewidth p ack agelngth Se alingmethod Mou nti g he ieg h t W 0.75 m MAX 0. 18 g d pitch x 3.0m Plasticmold 0.5 m x 3.0m
(LC-10PM4)
10-pinlasticS (LC -10P M 4)
NO
3.0.1 (.18.04) (.094)
6 10
2.401
INDEXAR 3.0.1 (.18.04) (.0674) 0.41 (.0164) 1.70
1
5
1PINCORE
(C0.3.012)(C
0.5(2) TYP 0.253 (.01)
0.75(30) 0.5(2) 0. (.0)
C
+.02 -.0 +0.5 -0.0
MAX 0.15(6)
8FUJITSONICSLIMTEDC104S-c12 02 ELTRUM
Dimens v T h eN o t :
on i
s n i m c( e h al ue spin
s). arenth se s arvrefnc al ue s.
Please confirm the latest Package dimension by following URL. http://edevice.fujitsu.com/package/en-search/
DS04-27245-2E
43
MB39C006A
CONTENTS
page DESCRIPTION ................................................................................................................................................ 1 FEATURES ........................................ .............................................................................................................. 1 APPLICATIONS .............................................................................................................................................. 1 PIN ASSIGNMENT ......................................................................................................................................... 2 PIN DESCRIPTIONS ...................................................................................................................................... 2 I/O PIN EQUIVALENT CIRCUIT DIAGRAM ............................................................................................... 3 BLOCK DIAGRAM .......................................................................................................................................... 4 FUNCTION OF EACH BLOCK ..................................................................................................................... 6 ABSOLUTE MAXIMUM RATINGS ............................................................................................................... 8 RECOMMENDED OPERATING CONDITIONS ........................................................................................ 9 ELECTRICAL CHARACTERISTICS ............................................................................................................ 10 TEST CIRCUIT FOR MEASURING TYPI CAL OPERATING CHARACTERISTICS ............................ 12 APPLICATION NOTES ....................................... ........................................................................................... 13 EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ........................................................... 18 APPLICATION CIRCUIT EXAMPLES ......................................................................................................... 33 USAGE PRECAUTIONS ............................................................................................................................... 35 ORDERING INFORMATION ...................................... ................................................................................... 35 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION .............................................. 35 LABELING SAMPLE (LEAD FREE VERSION) ......................................................................................... 36 MARKING FORMAT ....................................................................................................................................... 36 RECOMMENDED MOUNTING CONDITIONS of MB39C006APN ........................................................ 37 EVALUATION BOARD SPECIFICATION ................................................................................................... 38 EV BOARD ORDERING INFORMATION ................................................................................................... 42 PACKAGE DIMENSION ................................................................................................................................ 43
44
DS04-27245-2E
MB39C006A
MEMO
DS04-27245-2E
45
MB39C006A
MEMO
DS04-27245-2E
47
MB39C006A
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: 1-3-5322-3329 8+ http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: 1-408-737-5600 Fax: 1-408-737-5999 + + http://www.fma.fujitsu.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: 49-6103-690-0 Fax: 49-6103-690-122 + + http://emea.fujitsu.com/microelectronics/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel: 2-2-3484-7100 Fax: 2-2-3484-7111 8+ 8+ http://kr.fujitsu.com/fmk/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LTD. 151 Lorong Chuan, 05-08 New Tech Park 556741 Singapore # Tel : 65-6281-0770 Fax : 65-6281-0220 + + http://www.fmal.fujitsu.com/ FUSU MICCCS SHAAI CO., .LTD TIJ EL O R IN O RT HGN m. ,2013 und Center, R B o.22 Yan An oad (E), N R Shanghai ,20 China Tel : 863-412+ Fa x : 5061- 3 2 8+ http://cn.fujitsu.com/fmc/ FUSU MICCCS PACIFC ASIA .LTD TIJ EL O R IN O RT I /F., orld Commerce Centre, 1 Canton oad, 01 W R simshatsui, owloon, ong ong T K H K Tel : 620-7358+ Fax : 9623-758+ http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited: Sales Promotion Department

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