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| MBR1070 thru MBR10100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 A=Anode, C=Cathode, TAB=Cathode VRRM V 70 80 90 100 VRMS V 49 56 63 70 VDC V 70 80 90 100 MBR1070 MBR1080 MBR1090 MBR10100 Symbol I(AV) IFSM dv/dt VF Characteristics Maximum Average Forward Rectified Current @TC=135oC Maximum Ratings 10 150 10000 IF=10A @TJ=25oC IF=10A @TJ=125oC IF=20A @TJ=125oC @TJ=25oC @TJ=125oC 0.85 0.75 0.80 0.1 100 2.0 1100 -55 to +150 -55 to +175 Unit A A V/us V Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range IR ROJC CJ TJ TSTG mA o C/W pF o o C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any MBR1070 thru MBR10100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 10 PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8 6 4 2 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT ,(mA) TJ = 125 C 10 INSTANTANEOUS FORWARD CURRENT ,(A) 10 1.0 0.1 TJ = 75 C 1.0 0.01 TJ = 25 C TJ = 25 C 0.001 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 0.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PULSE WIDTH 300us 2% Duty cycle 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF) 1000 TJ = 25 C, f= 1MHz 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS |
Price & Availability of MBR10100
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