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| STTH3R04 Ultrafast recovery diode Features A K Negligible switching losses Low forward and reverse recovery times High junction temperature DO-15 DO-201AD STTH3R04Q STTH3R04 Band indicates cathode side. Description The STTH3R04 series uses ST's new 400 V planar Pt doping technology. The STTH3R04 is specially suited for switching mode base drive and transistor circuits. Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. SMB STTH3R04U SMC STTH3R04S Table 1. Device summary IF(AV) VRRM Tj (max) VF (typ) trr (typ) 3A 400 V 175 C 0.9 V 18 ns May 2008 Rev 1 1/10 www.st.com Characteristics STTH3R04 1 Characteristics Table 2. Symbol VRRM Absolute ratings (limiting values at 25 C, unless otherwise specified) Parameter Repetitive peak reverse voltage DO-15 Tlead = 70 C Tlead = 80 C Tlead = 70 C Tlead = 100 C 60 -65 to +175 175 A C C 3.0 A DO-201AD SMB SMC Value 400 Unit V IF(AV) Average forward current, = 0.5 IFSM Tstg Tj Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature(1) 1. On infinite heatsink with 10 mm lead length Table 3. Symbol Rth(j-l) Thermal parameters Parameter Junction to lead Lead length = 10 mm on infinite heatsink DO-15 DO-201AD SMB Value 25 22 C/W 25 17 Unit Rth(j-l) Junction to lead SMC Table 4. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM Min Typ Max 5 A 5 50 1.5 IF = 3.0 A 1.0 0.9 1.25 1.15 V Unit VF(2) Forward voltage drop Tj = 100 C Tj = 150 C 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.083 x IF2(RMS) 2/10 STTH3R04 Table 5. Symbol Characteristics Dynamic characteristics (Tj = 25 C unless otherwise stated) Parameter Test conditions IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C Reverse recovery current Forward recovery time Forward recovery voltage IF = 3.0 A, dIF/dt = -200 A/s, VR = 320 V, Tj = 125 C IF = 3.0 A dIF/dt = 100 A/s VFR = 1.1 x VFmax, Tj = 25 C IF = 3.0 A dIF/dt = 100 A/s 2.5 18 4 Min Typ Max 35 ns 25 5.5 75 A ns V Unit trr Reverse recovery time IRM tfr VFP Figure 1. P(W) 4.5 4.0 3.5 3.0 2.5 Conduction losses versus average forward current =0.05 =0.1 =0.2 =0.5 =1 Figure 2. IFM(A) Forward voltage drop versus forward current 50 45 40 35 30 25 TJ=150C (Maximum values) 2.0 20 1.5 1.0 0.5 IF(AV)(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 T TJ=150C (Typical values) 15 10 TJ=25C (Maximum values) =tp/T tp 5 0 0.0 0.4 0.8 1.2 1.6 2.0 VFM(V) 2.4 2.8 3.2 Figure 3. Figure 4. Relative variation of thermal impedance junction to lead versus pulse duration, DO-15 (epoxy FR4, copper thickness = 35 m) Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 DO-201AD Lleads=10mm Relative variation of thermal impedance junction to ambient versus pulse duration, DO-201AD (epoxy FR4, copper thickness = 35 m) Zth(j-l)/Rth(j-l) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse DO-15 Lleads=10mm tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 0.1 0.0 Single pulse tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 0.0 1.E-01 1.E-01 3/10 Characteristics STTH3R04 Figure 5. Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration, SMB (epoxy FR4, copper thickness = 35 m) Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 SMC SCu=1cm Relative variation of thermal impedance junction to ambient versus pulse duration, SMC Zth(j-a) /Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse SMB SCu=1cm tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 0.1 Single pulse tP(s) 1.E+00 1.E+01 1.E+02 1.E+03 0.0 1.E-01 0.0 1.E-01 Figure 7. Junction capacitance versus reverse voltage applied (typical values) F=1MHz VOSC=30mVRMS Tj=25C Figure 8. Reverse recovery charges versus dIF/dt (typical values) C(pF) 100 100 90 80 70 60 QRR(nC) IF= 3 A VR=320 V Tj=125 C 10 50 40 30 20 VR(V) Tj=25 C 10 0 dIF/dt(A/s) 10 100 1000 1 1 10 100 1000 Figure 9. tRR(ns) Reverse recovery time versus dIF/dt (typical values) IF= 3 A VR=320 V Figure 10. Peak reverse recovery current versus dIF/dt (typical values) 8 7 6 100 90 80 70 60 50 40 30 IRM(A) IF= 3 A VR=320 V 5 4 Tj=125 C Tj=125 C 3 Tj=25 C 2 1 Tj=25 C 20 10 0 10 100 1000 dIF/dt(A/s) 0 10 100 1000 dIF/dt(A/s) 4/10 STTH3R04 Characteristics Figure 11. Relative variations of dynamic parameters versus junction temperature QRR; IRM [T j] / Q RR; IRM [T j=125C] 1.4 1.2 1.0 0.8 0.6 0.4 QRR IF= 3 A VR=320 V Figure 12. Transient peak forward voltage versus dIF/dt (typical values) VFp(V) 25 IF=3 A Tj=125 C 20 IRM 15 10 5 0.2 0.0 25 50 75 T j(C) 0 0 50 100 150 200 dIF/dt(A/s) 100 125 150 250 300 350 400 450 500 Figure 13. Forward recovery time versus dIF/dt (typical values) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) Figure 14. Thermal resistance versus lead length, DO-15 Rth(j-a) (C/W) 120 DO-15 tFR(ns) IF=3 A Tj=125 C 100 80 60 40 20 Lleads(mm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 16. Thermal resistance versus lead Figure 15. Thermal resistance junction to length, DO-201AD ambient versus copper surface under each lead, DO-201AD (epoxy FR4, copper thickness = 35 m) Rth(j-a) (C/W) 80 DO-201AD 100 90 80 Rth(C/W) DO-201AD Rth(j-a) 70 60 50 40 30 20 10 SCu(cm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 70 60 50 40 Rth(j-l) 30 20 10 0 5 10 15 20 25 Lleads(mm) 5/10 Package information STTH3R04 Figure 17. Thermal resistance junction to ambient versus copper surface under each lead, SMB, SMC (epoxy FR4, copper thickness = 35 m) Rth(j-a) (C/W) 120 100 SMB 80 60 SMC 40 20 SCU(cm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 6. DO201AD dimensions Dimensions Ref. Millimeters Min. B Note 1 Inches Min. Max. 0.374 1.000 Max. 9.50 A E E Note 1 B A B 25.40 OD Note 2 C D E Notes 5.30 1.30 1.25 0.209 0.051 0.049 OC 1 - The lead diameter o D is not controlled over zone E 2 - The minimum length which must stay straight between the right angles after bending is 0.59"(15mm) 6/10 STTH3R04 Table 7. DO-15 dimensions Package information Dimensions C A C Ref. Millimeters Min. Max. 6.75 3.53 31 0.88 Inches Min. 0.238 0.116 1.024 0.028 Max. 0.266 0.139 1.220 0.035 A D B 6.05 2.95 26 0.71 B C D Table 8. SMB dimensions Dimensions Ref. E1 Millimeters Min. Max. 2.45 0.20 2.20 0.40 3.95 5.60 4.60 1.50 Inches Min. 0.075 0.002 0.077 0.006 0.130 0.201 0.159 0.030 Max. 0.096 0.008 0.087 0.016 0.156 0.220 0.181 0.059 D A1 A2 b 1.90 0.05 1.95 0.15 3.30 5.10 4.05 0.75 E c A1 D E b C L A2 E1 L Figure 18. Footprint, dimensions in mm (inches) 1.62 2.60 (0.064) (0.102) 1.62 (0.064) 2.18 (0.086) 5.84 (0.300) 7/10 Package information Table 9. SMC dimensions Dimensions Ref. E1 STTH3R04 Millimeters Min. Max. 2.45 0.20 3.20 0.40 6.25 8.15 7.15 4.70 1.50 Inches Min. 0.075 0.002 0.114 0.006 0.218 0.305 0.260 0.173 0.030 Max. 0.096 0.008 0.126 0.016 0.246 0.321 0.281 0.185 0.059 A1 D 1.90 0.05 2.90 0.15 5.55 7.75 6.60 4.40 0.75 A2 b E c D A1 E b C E2 L A2 E1 E2 L Figure 19. Footprint, dimensions in mm (inches) 1.54 (0.061) 5.11 (0.201) 1.54 (0.061) 3.14 (0.124) 8.19 (0.322) 8/10 STTH3R04 Ordering information 3 Ordering information Table 10. Ordering information Marking STTH3R04 STTH3R04 STTH3R04Q STTH3R04Q R4S 3R4U Package DO-201AD DO-201AD DO-15 DO-15 SMC SMB Weight 1.16 g 1.16g 0.4 g 0.4 g 0.243 g 0.12 g Base qty 600 1900 1000 6000 2500 2500 Delivery mode Ammopack Tape and reel Ammopack Tape and reel Tape and reel Tape and reel Order code STTH3R04 STTH3R04RL STTH3R04Q STTH3R04QRL STTH3R04S STTH3R04U 4 Revision history Table 11. Date 30-May-2008 Document revision history Revision 1 First issue Description of changes 9/10 STTH3R04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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