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| PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features S5980: 5 x 5 mm S5981: 10 x 10 mm S5870: 10 x 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow l Thin package: 1.26 mmt l Photo sensitivity: 0.72 A/W (=960 nm) s General ratings Parameter Symbol Window material G ap bet ween ele me nts Active area A S5980 Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. 5.0/4 elements S5981 Resin coating 30 10.0/4 elements S5870 10.0/2 elements Unit m mm s Absolute maximum ratings Parameter Symbol Reverse voltage VR Max. O perating te mp erature Topr Storage temperature Tstg S5980 S5981 30 -40 to +100 -40 to +125 S5870 Unit V C C s Electrical and optical characteristics (Ta=25 C, per 1 element) Parameter Symbol Condition Spectral response range Peak sensitivity 960 p wavelength =p Photo sensitivity S 0.72 Dark current ID VR=10 V 0.3 Te mperature coefficient of ID TCID 1.15 VR=10 V, RL=50 , -3 dB Cut-off frequency fc 25 T er minal c apacita nce Ct VR=10 V, f=1 MHz 10 Noise equivalent po wer NEP VR=10 V, =p 1.4 x 10 - 1 4 Note) S5980: For mass production, order unit is 100 pieces. S5981, S5870: For mass production, order unit is 50 pieces. S5980 Typ. Max. 320 to 1100 2 S5981 Typ. Max. 320 to 1100 960 0.72 0.6 1.15 20 35 1.9 x 10 - 1 4 4 S5870 Typ. Max. 320 to 1100 960 0.72 2 1.15 10 50 3.5 x 10 - 1 4 10 Unit nm nm A/W nA times/C MHz pF W/Hz1/2 Precautions for use q The light input window of this product uses soft silicone resin. Avoid touching the window to keep it from grime and damage that can decrease sensitivity. External force applied to the resin surface may deform or cut off the wires, so do not touch the window to prevent such troubles. q Use rosin flux when soldering, to prevent the terminal lead corrosion. Reflow oven temperature should be at 260 C maximum for 5 seconds maximum time under the conditions that no moisture absorption occurs. Reflow soldering conditions differ depending on the type of PC board and reflow oven. Carefully check these conditions before use. q Silicone resin swells when it absorbs organic solvent, so do not use any solvent other than alcohol. q Avoid unpacking until you actually use this product to prevent the terminals from oxidation and dust deposits or the coated resin from absorbing moisture. When the product is stored for 3 months while not unpacked or 24 hours have elapsed after unpacking, perform baking in nitrogen atmosphere at 150 C for 3 to 5 hours or at 120 C for 12 to 15 hours before use. 1 Si PIN photodiode s Spectral response 0.8 0.7 (Typ. Ta=25 C) S5980, S5981, S5870 10 nA (Typ. Ta=25 C) s Photo sensitivity temperature characteristic s Dark current vs. reverse voltage +1.5 (Typ. ) TEMPERATURE COEFFICIENT (%/C) S5870 +1.0 PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 1 nA DARK CURRENT S5981 +0.5 100 pA S5980 0 10 pA 200 400 600 800 1000 -0.5 190 400 600 800 1000 1 pA 0.01 0.1 1 10 100 WAVELENGTH (nm) KMPDB0122EA WAVELENGTH (nm) KMPDB0123EA REVERSE VOLTAGE (V) KMPDB0124EA s Terminal capacitance vs. reverse voltage 1 nF s Dimensional outlines (unit: mm) S5980 8.8 0.2 (Typ. Ta=25 C, f=1 MHz) S5981 S5870 TERMINAL CAPACITANCE 100 pF 10.6 0.2 b c 0.03 10 pF S5980 1 pF 0.46 PHOTOSENSITIVE SURFACE SILICONE RESIN 1.26 0.15 DETAILS OF ACTIVE AREA 100 fF 0.1 1 10 100 KMPDB0125EA (10 x) 0.6 1.27 Burrs shall protrude no more than 0.3 mm on any side of package. KMPDA0036EA S5981 14.5 0.2 (4 x) R0.3 ACTIVE AREA 16.5 0.2 10.0 (4 x) R0.3 ACTIVE AREA 14.5 0.2 S5870 16.5 0.2 a b b c 0.03 1.26 0.15 0.46 1.8 1.8 2.54 2.54 Burrs shall protrude no more than 0.3 mm on any side of package. KMPDA0037EA Burrs shall protrude no more than 0.3 mm on any side of package. KMPDA0113EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 1.8 (10 x) 1.2 ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a 1.8 0.46 PHOTOSENSITIVE SURFACE SILICONE RESIN DETAILS OF ACTIVE AREA 1.26 0.15 0.03 DETAILS OF ACTIVE AREA PHOTOSENSITIVE SURFACE SILICONE RESIN (10 x) 1.2 NC ANODE a CATHODE COMMON ANODE b NC NC NC NC NC NC 3.0 3.0 10.0 a d 0.03 1.5 REVERSE VOLTAGE (V) ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a 1.5 2.5 2 5.0 (4 x) R0.3 ACTIVE AREA a d 0.03 Cat. No. KPIN1012E02 Aug. 2006 DN |
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