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Datasheet File OCR Text: |
Shantou Huashan Electronic Devices Co.,Ltd. H8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................-40V VCEO----Collector-Emitter Voltage.................................-25V V EBO ----Emitter-Base Voltage....................................-6V I C ----Collector Current.............................................-1.5A 1EmitterE 2BaseB 3Collector C TO-92 ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE2 VBE VBE(sat) BVCBO BVCEO BVEBO Cob -0.1 -0.1 85 40 500 -1 -0.5 -1.2 -40 -25 -6 15 100 A A VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA HFE1 DC Current Gain Base- Emitter Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product V V V V V V pF VCE=-1V, IC=-10mA IC=-800mA, IB=-80mA IC=-800mA,IB=-80mA IC=-100AIE=0 IC=-2mAIB=0 IE=-100AIC=0 VCB=-10V,IE=0 f=1MHz VCE(sat Collector- Emitter Saturation Voltage fT MHz VCE=-10V, IC=-50mA hFE Classification B 85--160 C 120--200 D 160--300 E 270--500 Shantou Huashan Electronic Devices Co.,Ltd. H8550 |
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