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  Datasheet File OCR Text:
 Shantou Huashan Electronic Devices Co.,Ltd.
H8550
PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
ABSOLUTE MAXIMUM RATINGSTa=25
T stg ----Storage Temperature.............................. -55~150 T j ----Junction Temperature.......................................150 P C ----Collector Dissipation.......................................1W VCBO----Collector-Base Voltage....................................-40V VCEO----Collector-Emitter Voltage.................................-25V V EBO ----Emitter-Base Voltage....................................-6V I C ----Collector Current.............................................-1.5A 1EmitterE 2BaseB 3Collector C TO-92
ELECTRICAL CHARACTERISTICSTa=25
Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions
ICBO IEBO HFE2 VBE VBE(sat) BVCBO BVCEO BVEBO Cob
-0.1 -0.1 85 40 500 -1 -0.5 -1.2 -40 -25 -6 15 100
A A
VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA
HFE1 DC Current Gain
Base- Emitter Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product
V V V V V V pF
VCE=-1V, IC=-10mA IC=-800mA, IB=-80mA IC=-800mA,IB=-80mA IC=-100AIE=0 IC=-2mAIB=0 IE=-100AIC=0 VCB=-10V,IE=0 f=1MHz
VCE(sat Collector- Emitter Saturation Voltage
fT
MHz VCE=-10V, IC=-50mA
hFE Classification
B 85--160 C 120--200 D 160--300 E 270--500
Shantou Huashan Electronic Devices Co.,Ltd.
H8550


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