![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R HBD435 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 Tstg----Storage Temperature.............................. -65~150 Tj----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 40W VCBO ----Collector-Base Voltage.............................. 32V VCES ----Collector-Emitter Voltage........................... 32V VEBO ----Emitter-Base Voltage.................................... 5V IC----Collector Current DC ....................................... 4A IC----Collector CurrentPulse....................................7A .............................................1A IB----Base Current DC TO-220 1BaseB 2CollectorC 3Emitter, E ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter-Base Cutoff Current Collector Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICBO IEBO ICES HFE1 *HFE2 *HFE3 *VCE(sat1) *VBE(on) fT 32 100 1 100 40 85 50 130 140 0.2 3 0.5 1.1 V A mA A IC=100mA, IB=0 VCB=32V, IE=0 VEB=5V, IC=0 VCE=32V, VBE=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter On Voltage Current Gain-Bandwidth Product V V MHz IC=2A, IB=0.2A VCE=1V,IC=2A, Ic=250mA, VCE=1V *Pulse Test: PW=300S,Duty Cycle=1.5% Pulsed Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R HBD435 |
Price & Availability of HBD435
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |