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| 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low on-state resistance. 2) Low voltage drive. 3) High power package. (1) (2) (3) (4) Abbreviated symbol : M02 Each lead has same dimensions Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Type TT8M2 Code Basic ordering unit (pieces) Taping TR 3000 2 2 1 1 (1) 1 ESD protection diode 2 Body diode (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) 1 Pw10s, Duty cycle1% Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP 1 1 Limits 30 12 2.5 10 0.8 10 Unit V V A A A A www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/8 2009.06 - Rev.A TT8M2 Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) 1 Pw10s, Duty cycle1% Data Sheet Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP 1 1 Limits -20 10 2.5 10 -0.8 -10 Unit V V A A A A Parameter Total power dissipation Channel temperature Range of Storage temperature 2 Symbol PD Tch Tstg 2 Limits 1.25 1.0 150 -55 to +150 Unit W / TOTAL W / ELEMENT C C Mounted on a ceramic board Electrical characteristics (Ta=25C) < Characteristics for the Tr1( Nch ).> Symbol Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 30 - 0.5 - - - 2.2 - - - - - - - - - - Typ. - - - - 65 70 95 - 180 60 35 7 30 20 20 3.2 0.9 0.4 Max. 10 - 1 1.5 90 95 130 - - - - - - - - - - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=4.5V ID=2.5A, VGS=4V ID=2.5A, VGS=2.5V VDS=10V, ID=2.5A VDS=10V VGS=0V f=1MHz VDD 15V ID=1.2A VGS=4.5V RL 12.5 RG=10 VDD 15V, ID=2.5A VGS=4.5V RL 6, RG=10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 2.5A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/8 2009.06 - Rev.A TT8M2 Electrical characteristics (Ta=25C) < Characteristics for the Tr2( Pch ).> Symbol Min. Parameter Gate-source leakage - IGSS Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current IDSS - Gate threshold voltage VGS (th) -0.3 - Static drain-source on-state - RDS (on) resistance - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Data Sheet Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd 2.5 - - - - - - - - - - Typ. - - - - 49 68 100 140 - 1270 100 90 9 30 120 85 12 2.5 2.0 Max. 10 - -1 -1.0 68 95 150 280 - - - - - - - - - - - Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V, VDS=0V ID= -1mA, VGS=0V VDS= -20V, VGS=0V VDS= -10V, ID= -1mA ID= -2.5A, VGS= -4.5V ID= -1.2A, VGS= -2.5V ID= -1.2A, VGS= -1.8V ID= -0.5A, VGS= -1.5V VDS= -10V, ID= -2.5A VDS= -10V VGS=0V f=1MHz VDD -10V ID= -1.2A VGS= -4.5V RL 8.3 RG=10 VDD -10V, ID= -2.5A VGS= -4.5V RL 4, RG=10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -2.5A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/8 2009.06 - Rev.A TT8M2 Electrical characteristics curves 2.5 VGS= 10V VGS= 4.5V VGS=4.0V VGS= 2.5V VGS= 2.0V Ta=25C Pulsed DRAIN CURRENT : ID [A] 2.5 VGS= 4.5V VGS= 4.0V VGS= 2.5V Ta=25C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C Data Sheet DRAIN CURRENT : ID [A] 2 2 1 1.5 1.5 VGS= 1.5V 1 0.1 1 VGS= 1.5V 0.5 VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1 0.5 VGS= 1.2V 0 0 2 4 6 8 10 0.01 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics() GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m] Ta= 25C Pulsed VGS= 2.5V VGS= 4.0V VGS= 4.5V 1000 VGS= 4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1000 VGS= 4.0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 100 100 100 10 0.1 1 DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m] 1000 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m] VGS= 2.5V Pulsed 10 VDS= 10V Pulsed 300 250 ID = 1.2A 200 150 100 50 0 0 2 4 6 ID = 2.5A Ta=25C Pulsed 100 1 Ta= -25C Ta=25C Ta=75C Ta=125C 10 0.1 1 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10 0.1 0.01 0.1 1 10 8 10 DRAIN-CURRENT : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current GATE-SOURCE VOLTAGE : VGS[V] Fig.9 Static Drain-Source On-State Resistance vs. Gate Source Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 4/8 2009.06 - Rev.A TT8M2 10 REVERSE DRAIN CURRENT : Is [A] VGS=0V Pulsed 5 GATE-SOURCE VOLTAGE : VGS [V] 1000 Ciss CAPACITANCE : C [pF] Data Sheet 1 Ta=25C VDD = 15V 4 ID = 2.5A RG=10 Pulsed 3 Ta=25C f=1MHz VGS=0V 100 0.1 Ta=125C Ta=75C Ta=25C Ta=-25C 2 1 Coss Crss 0.01 0 0.5 1 1.5 0 0 1 2 3 4 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] Fig.11 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS[V] Fig.12 Typical Capacitance vs. Drain-Source Voltage 1000 tf SWITCHING TIME : t [ns] Ta=25C RG=10 VDD = 15V Pulsed VGS=4.5V 100 td(off) 10 td (on) 1 0.01 0.1 1 tr 10 DRAIN-CURRENT : ID [A] Fig.13 Switching Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 5/8 2009.06 - Rev.A TT8M2 4 VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 4 VGS= -10V VGS= -1.8V 3 VGS= -1.5V VGS= -1.3V 2 VGS= -1.2V 1 VGS= -1.1V 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0.001 0 0.5 1 1.5 Ta=25C Pulsed DRAIN CURRENT : -ID [A] 10 VDS= -10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C Data Sheet DRAIN CURRENT : -ID [A] 3 DRAIN CURRENT : -ID [A] 1 2 Ta=25C Pulsed 1 VGS= -1.3V VGS= -1.1V 0 0.1 0.01 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics() GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 100 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] Ta=25C Pulsed 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V VGS= -4.5V Pulsed 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -2.5V Pulsed Ta= -25C Ta=25C Ta=75C Ta=125C 100 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS= -1.8V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 1000 100 Ta=125C Ta=75C Ta=25C Ta= -25C VDS= -10V Pulsed 10 100 100 1 Ta= -25C Ta=25C Ta=75C Ta=125C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current() 10 0 0.1 1 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 10 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 6/8 2009.06 - Rev.A TT8M2 300 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[m] 250 ID = -2.5A 200 150 100 50 0 0 2 4 6 8 10 Ta=25C Pulsed 10 REVERSE DRAIN CURRENT : -Is [A] VGS=0V Pulsed 5 GATE-SOURCE VOLTAGE : -VGS [V] Data Sheet 4 1 Ta=125C Ta=75C Ta=25C Ta=-25C 3 2 Ta=25C VDD = -10V ID = -2.5A RG=10 Pulsed 0 2 4 6 8 10 12 14 0.1 1 ID = -1.2A 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 10000 CAPACITANCE : C [pF] SWITCHING TIME : t [ns] Ciss 1000 Coss 1000 td (off) tf Ta=25C VDD = -10V VGS=-4.5V RG=10 Pulsed 100 100 Ta=25C f=1MHz VGS=0V 0.01 Crss 10 tr 1 0.01 0.1 td (on) 10 0.1 1 10 100 1 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-CURRENT : -ID [A] Fig.14 Switching Characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 7/8 2009.06 - Rev.A TT8M2 Measurement circuits < Nch > VGS ID RL D.U.T. RG VDD 90% td(on) ton tr td(off) toff 90% tf VGS VDS Data Sheet VDS Pulse Width 50% 10% 10% 90% 50% 10% Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform < Pch > Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.3-1 Switching time measurement circuit Fig.3-2 Switching waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.4-1 Gate charge measurement circuit Fig.4-2 Gate charge waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 8/8 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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