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| SEMiX352GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 377 268 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 297 204 200 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 400 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)2s SPT IGBT Modules SEMiX352GB128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic welders up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 200 A Tj = 125 C RG on = 3 RG off = 3 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 18.9 1.24 0.78 1920 2.00 230 55 20 585 90 21 0.083 Tj = 25 C Tj = 125 C 4.5 1.9 2.10 1 0.9 4.5 6.0 5 0.1 2.35 2.55 1.15 1.05 6.0 7.5 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit GB (c) by SEMIKRON Rev. 12 - 02.12.2008 1 SEMiX352GB128Ds Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 200 A Tj = 125 C di/dtoff = 5350 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode 0.75 0.5 3.8 4.0 min. typ. 2.0 1.8 1.1 0.85 4.5 4.8 240 31 11 max. 2.5 2.3 1.45 1.2 5.3 5.5 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 SEMiX(R)2s SPT IGBT Modules SEMiX352GB128Ds IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.15 18 K/W nH m m K/W Preliminary Data Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 res., terminal-chip per module to heat sink (M5) to terminals (M6) TC = 25 C TC = 125 C 3 2.5 0.7 1 0.045 5 5 250 0,493 5% 3550 2% Nm Nm g Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Typical Applications * AC inverter drives * UPS * Electronic welders up to 20 kHz GB 2 Rev. 12 - 02.12.2008 (c) by SEMIKRON SEMiX352GB128Ds Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 12 - 02.12.2008 3 SEMiX352GB128Ds Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 12 - 02.12.2008 (c) by SEMIKRON SEMiX352GB128Ds SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 12 - 02.12.2008 5 |
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