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| 1SS270A SILICON EPITAXIAL PLANAR DIODE for high speed switching Max. 0.45 Features * Low capacitance * Short reverse recovery time * High reliability Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot Tj Ts Value 70 60 150 450 1 250 175 - 65 to + 175 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 60 V Capacitance between Terminals at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Symbol VF IR CT trr Max. 0.8 1 3 3.5 Unit V A pF ns SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/06/2007 1SS270A SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/06/2007 |
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