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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT4401N1PT CURRENT 0.6 Ampere FEATURE * Small flat package. ( FBPT-923 ) * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. 0.50.05 1.00.05 0.37(REF.) FBPT-923 1.00.05 CONSTRUCTION * NPN Switching Transistor 0.25(REF.) 0.050.04 0.680.05 0.420.05 CIRCUIT 1 3 0.30.05 0.260.05 2 Dimensions in millimeters FBPT-923 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total po wer dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -55 - -55 MIN. MAX. 60 40 6 600 100 +150 150 +150 V V V mA mW C C C 2006-07 UNIT RATING CHARACTERISTIC CURVES ( CHT4401N1PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 200 UNIT C/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 1 50 mA V CE = 2 V;note 2 IC = 500 mA IC = 150 mA; IB = 1 5 mA IC = 500 mA; IB = 5 0 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 5 0 mA Cc Ce fT collector capacitance emitter capacitance transition frequency IC = ic = 0; VBE = 500 mV; f = 140KHz IC = 20 mA; VCE = 10 V; f = 100 MHz - - 20 40 80 100 40 - - 750 - - 250 MIN. MAX. 50 50 - - - 300 - 400 750 950 1200 6.5 30 - mV mV mV mV pF pF MHz UNIT nA nA VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz - Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = -1 5 mA - - - - - - 35 15 20 250 200 60 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CHT4401N1PT ) Typical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 400 300 200 25 C 125 C 0.2 25 C 125 C 100 - 40 C 0.1 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 - 40 C Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 25 C 125 C 0.6 125 C 0.6 0.4 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 500 100 10 1 0.1 V CB Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C = 40V f = 1 MHz 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT4401N1PT ) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Ic 10 Switching Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 320 V cc = 25 V TIME (nS) 240 160 t off TIME (nS) 240 160 80 0 10 tf td ts tr 80 t on 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 |
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