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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose Transistor VOLTAGE 40 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT4403N1PT CURRENT 600 mAmpere FEATURE * Small surface mounting type. (FBPT-923) * High current gain. * Low colloector-emitter saturation. * High saturation current capability. 0.37(REF.) 0.50.05 1.00.05 FBPT-923 CONSTRUCTION * PNP transistors in one package. 0.25(REF.) 0.050.04 1.00.05 0.680.05 0.420.05 CIRCUIT (1) B C (3) 0.30.05 0.260.05 E (2) Dimensions in millimeters FBPT-923 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. -40 -40 -5 -600 100 +150 150 +150 UNIT V V V mA mW C C C 2006-07 Note 2. Transistor mounted on an FR4 printed-circuit board. RATING CHARACTERISTIC CURVES ( CHT4403N1PT ) CHARACTERISTICS Tamb = 25 C unless otherwise speciped. SYMBOL PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current base cut-off current CONDITIONS IC = -100uA ; IE = 0A IC = -1mA ; IB = 0A IE = -100uA ; IC = 0A VEB(OFF) = -0.4V ; VCE = -35 V VEB(OFF) = -0.4V ; VCE = -35 V IC = -100uA; VCE = -1V hFE DC current gain IC = -1 mA; VCE = -1V IC = -10 mA; VCE = -1V IC = -150 mA; VCE = -2V IC = -500 mA; VCE = -2V VCEsat VBEsat Ccb Ceb hie hre hfe hoe fT td tr ts tf collector-emitter saturation base-emitter saturation voltage output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance transition frequency delay time rise time storage time fall time IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA VCB=-10V; f=1.0MHZ; IE=0 VEB=-0.5V; f=1.0MHZ; IC=0 MIN. -40 -40 -6 - - 30 60 100 100 20 - - -750 - - - 1.5 0.1 60 1.0 200 - - - - - - - -100 -100 - - - 300 - -400 -750 -950 -1300 8.5 30 15 8.0 500 100 - 15 20 225 30 mV mV mV mV pF pF K x10 -4 S MAX. V V V UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL nA nA VCE=-10V; f=1.0KHZ; IC=-1.0mA IC = -20 mA; VCE = - 10 V f = 100 MHz VCC=-30V; IC=-150mA VBE(off)=-2.0V; IB1=-15mA VCC=-30V; IC=-150mA IB1=IB2=-15mA MHz nS nS nS nS RATING CHARACTERISTIC CURVES ( CHT4403N1PT ) TR1 CHT4403 Typical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical DC Current Gain vs Collector Current 1K V CE = 1V Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 0.2 25 C IC /I B =10 25 C 100 10 0.1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 30 CAPACITANCE (pF) 20 10 C ibo V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Capacitance f = 1MHz Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V 0.8 - 50 C 0.6 25 C 5.0 Cobo 125 C 0.4 1.0 -0.1 -1 -10 -50 0.2 0.1 REVERSE BIAS VOLTAGE (V) 1 10 I C - COLLECTOR CURRENT (mA) 100 |
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