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HVV1012-050 HVV1012-050 HVV1012-050 Pulsed Power Transistor HVV1012-050 L-Band Avionics Pulsed Power Transistor L-Band Avionics HVV1012-050MHz, 10s Pulse, 1% Duty L-Band Avionics Power Transistor The innovative Semiconductor Company! Pulsed10s Pulse, 1% Duty L-Band Avionics MHz, Pulsed Power Transistor 1025-1150 1025-1150 L-Band Avionics Pulsed Power Duty Duty 1025-1150 HVV1012-050 MHz, 10s 1% Transistor 1025-1150 MHz, 10s Pulse,Pulse, 1% 1025-1150 MHz,PulsedPulse, 1% Duty HVV1012-060 PRODUCT OVERVIEW L-Band Avionics 10s Power Transistor 1025-1150 MHz, 10s Pulse, 1% Duty
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The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company!
tothe frequency range from 1025MHz to 1150MHz. 1150 MHz. FEATURES FEATURES FEATURES Power Gain ** High Power Gain High FEATURES GainRuggedness ** Excellent Excellent High FEaTURES Ruggedness * High Power Power Gain
ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Symbol Parameter Value ABSOLUTE MAXIMUM RATINGS 105 Symbol Drain-Source Voltage 105 Parameter VDSS Drain-Source Voltage Value aBSOLUTE MaXIMUM RaTINGS Symbol VDSS Parameter Value Unit
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THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMaL CHaRaCTERISTICS THERMAL CHARACTERISTICS Max Symbol Parameter Symbol Parameter Max THERMAL CHARACTERISTICS 0.28 11 Symbol Thermal Resistance Parameter Max Thermal Resistance 0.28
m
Unit Unit Unit V V VGSDrain-Source VGS Gate-Source VoltageValue Gate-Source Voltage 10 V Drain-Source 105 105 DSS VDSS Symbol ParameterVoltage Voltage 10 V Unit V VDSS DSX Drain-Source Voltage 105 10 V V Gate-Source Current Voltage 44 V UnitA Gate-Source V IDSX I GS Drain Voltage Drain Current 10 Value A VGS Symbol Parameter VGS PDSX Gate-Source Voltage VDSSDDrain CurrentDissipation Drain-Source Voltage 10 625 V W Drain A PI Power Current 4 105 625 Power Dissipation 95 4 A W D IDSX IVGSSD Drain CurrentVoltage Gate-SourceTemperature -65 to V C 10 -65 A DSXTS TP Power Dissipation StorageDissipation 4 625 to Storage C Power Temperature W PD 625 W PD TS Power Current 625 +200 A IDSX Drain Dissipation 4 -65 W C Storage Temperature +200to TS Storage Temperature -65 to C P 2J Power Dissipation 625 to TSDTTJ Storage Temperature -65200 W C Junction Junction 200 C C +200 +200 TS T Storage Temperature +200 -65 to Temperature Temperature Junction 200 C C J Junction TJ 200 C +200 TJ Junction 200 C Temperature Temperature TJ Junction 200 C Temperature Temperature
Conditions Conditions Typ Typ Units Units 102 Units VUnits Symbol Parameter Conditions 2mA Typ VBR(DSS)Parameter VBR(DSS) Drain-Source Breakdown Conditions Drain-Source Breakdown VGS=0V,ID=1mA VGS=0V,ID=1mA 110 110 V Symbol Typ Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Current VGS=0V,ID=1mA 110 V IIDSS Drain Leakage BreakdownVGS=0V,ID=1mA Drain Leakage Current VGS=0V,VDS=48V VGS=0V,VDS=48V <10 A Symbol Parameter Conditions Typ <10 V VBR(DSS) DSS 110 <50 V Units A VBR(DSS) Drain-Source Breakdown Drain-Source Breakdown VGS=0V,ID=1mA 110 Drain Leakage VGS=0V,VDS=48V A IGSS IGSS Gate Leakage Current Gate Leakage Current VGS=5V,VDS=0V VGS=5V,VDS=0V <1 Drain-Source Breakdown VGS=0V,ID=1mA 110 <10 V DSS IDSS IVBR(DSS) Drain Leakage Current Current VGS=0V,VDS=48V <10 <1 AA A Drain Leakage Current VGS=0V,VDS=48V <10 DSS 1 1 G GSS GateDrainLeakage Current G Power Leakage Current VGS=5V,VDS=0V Power Current PPOUT=60W,F=1025,1150MHz<1<1 23 AA dB dB I Gate Gain VGS=5V,VDS=0V <1 A VGS=0V,VDS=48V <10 23 A OUT=60W,F=1025,1150MHz IGSS IIDSSP P LeakageGain Gate Leakage Current VGS=5V,VDS=0V GSS 11 IGSS P Gate Gain VGS=5V,VDS=0V <1 G Power 23 dB IRL Input Return Loss Input Gain PPOUT=60W,F=1025,1150MHz23 23 99 dBA dB dB dB OUT=60W,F=1025,1150MHz GP1 GP11IRL Power Gain Return Loss POUT=60W,F=1025,1150MHz PowerLeakage Current POUT=60W,F=1025,1150MHz 1 GP 1 1 1 1 Power Gain P=60W,F=1025,1150MHz =60W,F=1025,1150MHz IRL Input Return Efficiency Input Return Loss POUT=60W,F=1025,1150MHz 9 52 dB dB %dB 9 Drain Loss Drain Efficiency 52 dB % OUTPOUT=60W,F=1025,1150MHz 9 23 IRL IRL DD POUT OUT=60W,F=1025,1150MHz Input Return Loss P 1 1 IRL 1 1 Input Return POUTPPOUT=60W,F=1025,1150MHz52 =60W,F=1025,1150MHz 9 1 PD PD 1 Pulse Droop Pulse Droop <0.3 dB Drain Efficiency 52 % dB % OUT=60W,F=1025,1150MHz D Drain Efficiency Loss POUT=60W,F=1025,1150MHz Drain Efficiency POUT=60W,F=1025,1150MHz 52 <0.3 % dB D D1 1 Drain Efficiency P=60W,F=1025,1150MHz 52 1 D1PD OUT=60W,F=1025,1150MHz Pulse Droop POUT=60W,F=1025,1150MHz<0.3 <0.3% PD PD 1 Pulse Droop POUT OUT=60W,F=1025,1150MHz dBdB dB Pulse Droop P <0.3 PD POUT=60W,F=1025,1150MHz <0.3 dB 1.) Under PulsePulse Droop Pulse Width = 10sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA Conditions: 11.) Under PulseConditions: Pulse Width = 10sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA Under Pulse Conditions: Pulse Width = 10sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA 1.) Under Pulse Conditions: Pulse Width = 10sec,10sec, Pulse Duty Cycle =VDD at 48V, IDQ = 25mA 25mA 1.)21.) Under Pulse Conditions: Pulse Width = Pulse Duty Cycle = 1% at at VDD VDD = 48V, = 25mA Under Pulse Conditions: Pulse Width = 10sec, Pulse Duty Cycle = 1% 1% = = 48V, IDQ IDQ = 1.)Rated at TCASE Conditions: Pulse Width = 10sec, Pulse Duty Cycle = 1% at VDD = 48V, IDQ = 25mA Under Pulse = 25
Pr
HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. HVVi S. 51ststSt.Inc. Inc. Inc. HVVi S. 51 St. Suite 10235Semiconductors,100 10235 Semiconductors, Inc. HVVi Semiconductors, 100 HVViHVViSemiconductors, Inc. Semiconductors, Suite st 1023551 SuiteSt. Suite 100 10235S. 51st Suite Phoenix, ststAz.85044100100 10235 st 51 51 85044 1023510235S. St. Az. Suite 100 S.Phoenix, St. St. Suite 51 S. S. St. 100 Phoenix, Az. Phoenix,85044 85044 Phoenix,Phoenix,AZ. 85044 Az. Az. 85044 Phoenix,Az. 85044
ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICaL CHaRaCTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Symbol Parameter Parameter
Unit Unit Unit C/W JC Symbol JC Parameter Max Unit C/W Symbol Parameter Max Unit 1 1 Thermal Resistance Max 0.28 Unit C/W 1 JC Thermal Resistance 0.28 C/W JC Symbol Thermal Resistance Parameter 0.28 C/W JC 1 Thermal Resistance 0.28 C/W JC
in
*48V*Supply Voltage Voltage High PowerSupply ** ExcellentGain 48V Ruggedness High Power Gain *** 48V Supply Voltage RATINGS Excellent Ruggedness Excellent MAXIMUM RATINGS ABSOLUTE MAXIMUM ABSOLUTE Ruggedness * * 48V Supply Voltage 48V MAXIMUM ABSOLUTE MAXIMUM RATINGS ABSOLUTESupply VoltageRATINGS
* *
48V Supply Voltage * ** 48V Supply Voltage High Ruggedness Excellent Ruggedness Excellent Power Gain
For additional information, visit: www.hvvi.com For additional information, visit: www.hvvi.com For Semiconductors, www.hvvi.com For HVViSemiconductors, visit:Confidential additional information, Inc. HVViadditional information:www.hvvi.com For For additional information, visit: Inc. Confidential additional information, visit: www.hvvi.com For additional information, visit:www.hvvi.com Tel: (866) HVVi Semiconductors,Confidential (c) 2008 429-HVVi (4884) or Confidential Rights Reserved. (c)HVVi HVViSemiconductors,Inc. Confidential Reserved. 2008HVVi Semiconductors,Inc. All Rights Semiconductors, visit Inc. All HVVi Semiconductors, Inc.Inc. www.hvvi.com Semiconductors, (c) 2008 HVViSemiconductors,Inc. Confidential Reserved. Rights (c) HVVi Semiconductors, Inc. Rights Reserved. (c) 20082008 HVVi Semiconductors,AllRightsRights Reserved. HVVi Semiconductors,Inc. All Inc. AllReserved. (c) 2008 HVVi Semiconductors, Inc. AllAll RightsReserved. (c) 2008 HVVi Inc.
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The device resides in aatwo-lead metal flanged The device resides in two-lead metal flanged
package with liquid crystal polymer lid. The package with a two-lead metal flanged flanged The device in liquid a two-lead metal The device resides resides incrystal polymer lid. The device package style is metal flanged NI-400 package two-lead polymer lid. package in liquid polymer lid. The The NI-400 residescrystal crystalqualifiedThe gross device resides with two-lead metal flangedfor The package package with liquid a in a style is qualified for gross package test liquid a two-lead metal lid. for gross NI-400 The leak withpackageisstyle polymerpackage1071.6, device test -- MIL-STD-750D, Method The in NI-400 leak resides MIL-STD-750D, Method 1071.6, package style crystal is qualified with liquid crystal polymer lid.qualified for flangedstyle is The HV400 gross NI-400 with liquidC. Test ConditionMIL-STD-750D, 1071.6, Test Condition C. leak test - package package style is qualifiedMethod 1071.6, crystal Method leak test gross leak test MIL-STD-883,lid. gross MIL-STD-750D, polymer for The qualified for - Condition C.-is qualified for 1071.6, leak Test - MIL-STD-750D, MethodMethod 1014. test NI-400 package style gross Test Condition C. Test test - MIL-STD-750D, Method 1071.6, leak Condition C. RUGGEDNESS RUGGEDNESS Test Condition C.
The HVV1012-060 device is capablecapablecapable of The HVV1012-060 The HVV1012-060 device device ofis withstanding is of The corresponding toandevice VSWRcapable output corresponding at withstanding output20:1 is mismatch of output mismatch an output HVV1012-060toaa20:1 VSWR loada 20:1 output load an to rated withstanding mismatch correspondingat rated VSWR load The power and operating voltagemismatch the HVV1012-060 is withstanding an todevice VSWR at ratedof the across corresponding output load capable a corresponding and operating atvoltageoutput output a VSWR rated at ratedpower to an20:1and20:1load rated acrossacross output power outputoperating voltage withstanding and a operating voltage output the corresponding to 20:1 VSWR atof mismatch frequency frequency band operation. operation. power operatingband across power and band ofaoperation. atof voltage acrossoutput the thefrequency correspondingParameter VSWRCondition rated power and to 20:1 Test Condition operation.Units the frequency bandTest Symbol Symbol operating voltage ofacross Max Parameter Max Units
RUGGEDNESS RUGGEDNESS RUGGEDNESS RUGGEDNESS The HVV1012-060 device is capable of The HVV1012-060 device is capable of RUGGEDNESS withstanding an output load mismatch withstanding an output load mismatch
frequency and operating voltage across the band of operation. power 1 1 frequency band of operation. LMT Load POUT Condition 20:1 20:1 VSWR OUT = 60W Symbol Load Parameter PTest=60W Max Max Units Symbol LMT Parameterband Units VSWR frequency ParameterTest Condition of Symbol 1 Test Condition operation. Units Max Mismatch Mismatch 1
LMT LoadP POUT = 60W 20:1 20:1 LMT Load = 60W 1150MHz VSWR VSWR = Symbol Parameter OUT OUTCondition Test FF= 1150MHz Max LMT1 LoadTolerance P 20:1 Units VSWR Tolerance = 60W Mismatch Mismatch 1 F = 1150MHz LMT Load Tolerance = 60W P 1150MHz 20:1 VSWR Mismatch F =OUT F = 1150MHz Tolerance Mismatch Tolerance F = 1150MHz Tolerance
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EG-01-PO03X2 EG-01-PO03X2 EG-01-PO03X5 EG-01-PO03X2 06/10/08 EG-01-PO03X2 EG-01-PO03X206/10/08 EG-01-PO03X2 10/13/08 06/10/08 11 06/10/0806/10/08 06/10/081 1 11 1
DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION HVV1012-060 device is aa high The high power HVV1012-060 device is The high power high voltage silicon enhancement mode RF high a high voltage silicon enhancement mode a transistor Thepower power HVV1012-060 device transistor high HVV1012-060 device is RF is The high DESCRIPTION DESCRIPTION
designed silicon HVV1012-060 mode applications for enhancement transistor Thevoltage power L-Band mode device isapplications high voltage designedenhancement pulsed RFradar RF a high silicon for L-Band pulsed radar transistor operating over the frequency range from1025 MHz operating over L-Band pulsed applications 1025 designed for voltage silicon enhancement moderadartransistor MHz RF designed high L-Bandthe frequency range fromapplications for power HVV1012-060 device is a high pulsed radar The 1150MHz. The high power the pulsed radar from 1025 to over the L-Band frequency range applications MHz to MHz. operating designed siliconfrequency range device is a MHz operating1150 for over HVV1012-060 from 1025high voltage voltage enhancement mode RF transistor to 1150 MHz. frequency range from 1025 MHz for operating over the silicon to 1150 MHz. enhancement mode RFradar applications designed for L-Band pulsed transistor designed to 1150 MHz. the frequency range from 1025 MHzover L-Band over operating pulsed avionics applications operating FEATURES FEATURES
L-Band Avionics Pulsed Power Transistor PACKAGE Duty 1025-1150MHz, 10sPACKAGE Pulse, 1% PACKAGE PACKAGE for DME and TCAS Apllications
PACKAGE PACKAGE PaCKaGE
The innovative Semiconductor Company! HVV1012-060 PRODUCT OVERVIEW
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L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10s Pulse, 1% Duty for DME and TCAS Apllications
PaCKaGE DIMENSIONS
DraIN
GaTE SOUrCE
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-PO03X5 10/13/08 2

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