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| The innovative Semiconductor Company! HVV1012-250 HigH Voltage, HigH Ruggedness TM L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FeatuRes * Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme Ruggedness * Internal Input and Output Matching * Excellent Thermal Stability * All Gold Bonding Scheme tYPiCal PeRFoRManCe High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY (MHz) VDD (V) IDQ (mA) Power (W) GAIN (dB) EFFICIENCY (%) IRL (dB) 1150 50 100 250 19.5 48 20:1 Table 1: Typical RF Performance in broadband text fixture at 25C temperature with RF pulse conditions of pulse width = 10s and pulse period = 1ms. desCRiPtion The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFETTM technology produces over 250W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. oRdeRing inFoRMation Device Part Number: HVV1012-250 Demo Kit Part Number: HVV1012-250-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 1 The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness HVV1012-250 HigH Voltage, HigH Ruggedness HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics L-Band Avionics Pulsed Power Transistor Pulsed Power Transistor 1025-1150 MHz, 10s Pulse, 1% Duty Cycle Pulse, 1% Duty Cycle 1025-1150 Cycle 1025-1150 MHz, 10s Pulse, 1% DutyMHz, 10s For Airborne DME, TCAS and Airborne DME, TCAS and IFF Applications For IFF Applications For Airborne DME, TCAS and IFF Applications TM ELECTRICAL CHARACTERISTICS ELECTRICALCHaRaCteRistiCs eleCtRiCal CHARACTERISTICS Symbol Parameter The innovative Semiconductor Company! The innovative Semiconductor Company! Conditions Min VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 IDSS Drain Leakage Current VGS=0V,VDS=48V Current IGSS Gate Leakage VGS=5V,VDS=0V GP1 Power Gain F=1150MHz 17.5 IRL1 Input Return Loss F=1150MHz 1 D Drain Efficiency F=1150MHz 46 VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 VTH Threshold Voltage VDD=5V, ID=300A 0.7 Typical Max 102 50 200 1 5 19.5 -7 -4 48 1.45 1.8 1.2 1.7 Unit V A A dB dB % V V Symbol 1 Tr 1 Tf PD1 PULSE CHARACTERISTICS Pulse CHARACTERISTICS PULSECHaRaCteRistiCs Rise Time Fall Time Pulse Droop Parameter F=1150MHz F=1150MHz F=1150MHz Conditions Min Typical Max <40 50 - <15 50 - 0.25 0.5 Unit nS nS dB THERMAL PERFORMANCE THERMALCHaRaCteRistiCs tHeRMal PERFORMANCE RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE Ruggedness PeRFoRManCe The HVV1012-250 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR atrated output power and nominal operating voltage across the frequency band of operation. 1 NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10sec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broad band matched test fixture. 2 NOTE: Amount of parameters required to attain nominal quiescent current. 1.) NOTE: All gate voltage measured under pulsed conditions at 250W output power 1.) NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% point of the pulse with pulse width = 10sec, duty cycle = 1% measured = 50V, 10% = 100mAthea broadband matched test fixture.duty cycle = 1% and VDD at the IDQ point of in pulse with pulse width = 10sec, and VDD = 50V, IDQ =of gate in a broadband matched test nominal quiescent current. 2.) NOTE: Amount 100mA voltage required to attain fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified ISO 9001:2000 or visit Tel: (866) 429-HVVi (4884)Certifiedwww.hvvi.com Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 2 EG-01-DS09A EG-01-DS09A 12/12/08 12/12/082 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. HVVi Semiconductors, 100 10235 S. 51st St. Suite Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 The innovative Semiconductor Company! HVV1012-250 High Voltage,HVV1012-250 HigH Voltage, HigH Ruggedness High Ruggedness L-Band Avionics Pulsed Power Transistor Pulsed Power Transistor L-Band Avionics 1025-1150 MHz, 10s Pulse, 1% Duty Cycle 10s Pulse, 1% Duty Cycle 1025-1150 MHz, For Airborne DME, TCAS andFor Airborne DME, TCAS and IFF Applications IFF Applications TM ZIN* The innovative Semiconductor Company! Zo = 10 1025MHz ZOUT* 1025MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/12/08 EG-01-DS09A 3 12/11/08 3 HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10s Pulse, 1% Duty Cycle The innovative Semiconductor Company! For Airborne DME, TCAS and IFF Applications The innovative Semiconductor Company! The innovative Semiconductor Company! Demonstration Circuit Board Picture Demonstration Board Outline availableDemonstration Circuit Board Picture Demonstration Board Outline (AutoCAD Files for Demonstration Board online at www.hvvi.com/products) (AutoCAD Files for Demonstration Board available Demonstration Circuit Board Picture online at www.hvvi.com/products) Demonstration Board Outline (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1012-250 HigH HVV1012-250 High Voltage, High Ruggedness Voltage, HigH Ruggedness L-Band Avionics Pulsed Power Transistor Pulsed Power Transistor L-Band Avionics 1025-1150 MHz, 10s Pulse,1025-1150 Cycle10s Pulse, 1% Duty Cycle 1% Duty MHz, For Airborne DME, TCAS and IFF Applications and IFF Applications For Airborne DME, TCAS TM HVV1012-250 Demonstration Circuit Board Bill of Materials HVV1012-250 Demonstration Circuit Board Bill of Materials HVV1012-250 Demonstration Circuit Board Bill of Materials ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified (c) (866) 429-HVVi 9001:2000 Certified ISO (4884) or Inc. www.hvvi.com Tel:2008 HVVi Semiconductors, visit All Rights Reserved. EG-01-DS09A 12/12/08 EG-01-DS09A 4 EG-01-DS09A HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. 12/11/08 12/12/08 4 4 The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 10s Pulse, 1% Duty Cycle 1025-1150 MHz, 1025-1150 MHz, 10s Pulse, 1%Airborne DME, TCAS and IFF Applications For Duty Cycle For Airborne DME, TCAS and IFF Applications TM HVV1012-250 HigH Voltage, HigH Ruggedness PaCKage diMensions PACKAGE DIMENSIONS DRAIN GATE SOURCE The innovative Semiconductor Company! Note: Drawing isNote: Drawing is not actual size. not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property ISO 9001:2000 Certified EG-01-DS09A HVVi including any patent rights, Semiconductors, Inc. rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/11/08 10235 S. 51st St. Suite 100 Inc. (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. 5 Phoenix, AZ. 85044 |
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