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| Preliminary data SPP20N60S5 SPB20N60S5 Cool MOSTM=Power Transistor = *=New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge *=Improved periodic avalanche rating * Extreme dv/dt rated *=Optimized capacitances *=Improved noise immunity *=Former development designation: SPPx1N60S5/SPBx1N60S5 C OLMOS O Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID P-TO263-3-2 650 0.19 20 V A P-TO220-3-1 Type SPP20N60S5 SPB20N60S5 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4751 Q67040-S4171 Marking 20N60S5 20N60S5 G,1 D,2 S,3 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 20 13 Unit A Pulsed drain current TC=25C 1) ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 1 40 690 1 20 6 20 208 -55... +150 A kV/s V W C mJ Avalanche energy, single pulse ID = 10 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 20 A, VDD = 50 V Avalanche current (repetitive, limited by Tjmax ) Reverse diode dv/dt IS =20A, VDS TC=25C Operating and storage temperature 2001-07-25 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient (Leaded and through-hole packages) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA 35 RthJC RthJA Symbol min. SPP20N60S5 SPB20N60S5 Values typ. max. 0.6 62 Unit K/W 62 - Static Characteristics, at Tj = 25 C, unless otherwise specified Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 1 mA, Tj = 25 C Zero gate voltage drain current, VDS=VDSS VGS = 0 V, Tj = 25 C VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 13 A RDS(on) 0.16 0.19 IGSS IDSS 0.5 25 250 100 nA A VGS(th) 3.5 4.5 5.5 V(BR)DSS 600 V 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 2 2001-07-25 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Total gate charge Qgs Qgd Qg VDD =350V, ID =20A, VGS =0 to 10V VDD =350V, ID =20A SPP20N60S5 SPB20N60S5 Symbol Conditions min. Values typ. 12 3000 1170 28 120 25 140 30 max. 210 45 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max , ID =13A VGS =0V, VDS =25V, f=1MHz - S pF VDD =350V, VGS =10V, ID =20A, RG =5.7 ns - 21 47 79 103 nC Reverse Diode Inverse diode continuous forward current Inverse diode direct current,pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =20A VR =100V, IF=lS, diF /dt=100A/s IS ISM TC=25C - 1 610 12 20 40 1.2 - A V ns C 3 2001-07-25 Preliminary data Power dissipation Ptot = f (TC ) 240 W SPP20N60S5 SPP20N60S5 SPB20N60S5 Drain current ID = f (TC ) parameter: VGS 10 V 22 A SPP20N60S5 200 180 18 16 Ptot 160 140 12 120 10 100 80 60 40 20 0 0 20 40 60 80 100 120 C ID 14 8 6 4 2 160 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID=f (VDS) parameter: D=0.01, TC =25C 10 2 SPP20N60S5 tp = 11.0s Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 K/W SPP20N60S5 A DS = V /I 10 0 D ID R DS ( 10 1 Z thJC 100 s on ) 10 -1 10 -2 D = 0.50 0.20 10 0 1 ms 10 -3 0.10 0.05 10 ms DC 10 -4 single pulse 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 VDS 4 s tp 10 0 2001-07-25 Preliminary data Typ. output characteristic ID = f (VDS) Parameter: VGS, Tj = 25 C A 75 SPP20N60S5 SPB20N60S5 Drain-source on-resistance RDS(on) = f (Tj ) parameter : ID = 13 A, VGS = 10 V 1.1 SPP20N60S5 60 55 20V 15V 12V 11V 0.9 RDS(on) 0.8 0.7 0.6 ID 50 45 40 35 30 25 20 15 10 5 0 0 5 10 10V 9V 0.5 0.4 0.3 8V 98% 0.2 typ 7V 0.1 20 15 V 30 0 -60 -20 20 60 100 C 180 VDS Tj Typ. transfer characteristics ID = f ( VGS ) VDS 2 x ID x RDS(on)max 70 Typ. capacitances C = f (VDS) parameter: VGS =0 V, f=1 MHz 10 5 A 60 55 50 10 4 Ciss ID pF 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 10 3 Coss 10 2 Crss 10 1 V 20 VGS 5 10 0 0 10 20 30 40 50 60 70 80 V 100 VDS 2001-07-25 Preliminary data Avalanche Energy EAS = f (Tj ) par.: ID = 10 A, VDD = 50 V 750 SPP20N60S5 SPB20N60S5 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 20 mJ 600 550 A IAR 10 Tj (START)=25C EAS 500 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 5 Tj (START)=125C C 160 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 Tj 4 s 10 tAR Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP20N60S5 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 1 mA 7 720 V V V (BR)DSS 680 V GS(th) 5 660 640 620 600 max. 4 typ. 3 min. 2 580 1 560 540 -60 0 -60 -20 20 60 100 C 180 -20 20 60 100 C 180 Tj 6 Tj 2001-07-25 Preliminary data Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPP20N60S5 SPP20N60S5 SPB20N60S5 Typ. gate charge VGS = f (QGate ) parameter: IDpuls = 20 A 16 V SPP20N60S5 A 12 0,2 VDS max VGS 10 1 0,8 VDS max IF 10 8 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 6 4 2 0.4 0.8 1.2 1.6 2 2.4 V 3 0 0 20 40 60 80 nC Qg 120 VSD 7 2001-07-25 Preliminary data P-TO220-3-1 P-TO220-3-1 SPP20N60S5 SPB20N60S5 dimensions symbol min A B C D E F G H K L M N P T 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520 2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72 0.1 typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071 TO-263 (DPak/P-TO220SMD) dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z 9.80 0.70 1.00 1.03 [mm] max 10.20 1.30 1.60 1.07 min 0.3858 0.0276 0.0394 0.0406 [inch] max 0.4016 0.0512 0.0630 0.0421 2.54 typ. 0.65 0.85 5.08 typ. 4.30 4.50 1.17 9.05 2.30 1.37 9.45 2.50 0.1 typ. 0.0256 0.0335 0.2 typ. 0.1693 0.1772 0.0461 0.3563 0.0906 0.0539 0.3720 0.0984 15 typ. 0.00 0.20 4.20 5.20 8 max 2.40 3.00 0.40 10.80 1.15 6.23 4.60 9.40 16.15 0.60 0.5906 typ. 0.0000 0.0079 0.1654 0.2047 8 max 0.0945 0.1181 0.0157 0.0236 0.4252 0.0453 0.2453 0.1811 0.3701 0.6358 8 2001-07-25 Preliminary data SPP20N60S5 SPB20N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2001-07-25 |
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