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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 230 230 5 15 1.5 150 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 30 200 MIN 230 TYP. SYMBOL VCEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SC5358 MAX UNIT V 3.0 1.5 5 5 180 |I |I V V A A MHz pF hFE-1 classifications R 55-110 O 90-180 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5358 Fig.2 Outline dimensions JMnic |
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