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| MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE CM300DX-12A IC ................................................................... 300A VCES ............................................................ 600V Dual Flatbase Type / Insulated Package / Copper (non-plating) base plate RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM 152 137 121.7 110 0.5 99 94.5 Dimensions in mm (7.4) 1.2 (13.5) (4.2) (13.5) 4-M6 NUTS 17 0.8 7 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 58.4 (14) (14) 22 17 17 12 12 6 6 (3.81) (20.5) TERMINAL t = 0.8 47 24 1.15 0.65 4.3 39 50 0.5 57.5 62 1.5 2.5 2.1 48 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 6.5 (21.14) 0 (7.75) A 95 (102.25) 41.66 45.48 68.34 72.14 15 18.8 4-5.5 MOUNTING HOLES (3) 13 SECTION A 3.5 (5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5 Pin positions with tolerance 12.5 E2(39) G2(38) Tr2 E2(47) Di2 E1C2 (24) 0 0.5 LABEL Division of Dimension 0.5 to to to to to 3 6 30 120 400 Tolerance 0.2 0.3 0.5 0.8 1.2 C1(48) Di1 Tr1 Th NTC E1C2 (23) over over over 3 6 30 G1(15) TH1(1) TH2(2) E1(16) C1(22) over 120 CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Tj Tstg Viso -- -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short (Note. 1) DC, TC = 56C Collector current (Note. 4) Pulse (Note. 1, 5) Maximum collector dissipation TC = 25C (Note. 1) Emitter current TC = 25C (Note. 4) (Free wheeling diode forward current) Pulse Junction temperature Storage temperature Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) Base plate flatness On the centerilne X, Y Torque strength Main terminals M6 screw Torque strength Mounting M5 screw Weight (Typical) Rating 600 20 300 600 960 300 600 -40 ~ +150 -40 ~ +125 2500 0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330 Unit V A W A C Vrms m N*m g Note. 8: The base plate flatness measurement points are in the following figure. - - - Jan. 2009 2 MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 30mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 300A, VGE = 15V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE = 15V, RG = 5.1 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 300A) IE = 300A, VGE = 0V (Note. 6) Tj = 25C Tj = 125C Chip VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 300A, VGE = 0V Module lead resistance Main terminals-chip, per switch Thermal resistance per IGBT (Note. 1) per free wheeling diode (Junction to case) Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) per 1 module Internal gate resistance TC = 25C External gate resistance Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 1.7 1.9 1.6 -- -- -- 800 -- -- -- -- -- 9 2.0 1.95 1.9 1.1 -- 0.015 0 -- Max. 1 7 0.5 2.1 -- -- 34 4 1.2 -- 200 150 350 600 200 -- 2.8 -- -- -- 0.13 0.22 -- -- 21 Unit mA V A V nF nC ns C V m K/W (Note. 2) -- -- 2.0 NTC THERMISTOR PART Symbol R R/R B(25/50) P25 Note.1: 2: 3: 4: 5: 6: Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C (Note. 7) Min. 4.85 -7.3 -- -- Limits Typ. 5.00 -- 3375 -- Max. 5.15 +7.8 -- 10 Unit k % K mW Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K] Jan. 2009 3 MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE Chip Location (Top view) Dimensions in mm (tolerance: 1mm) (152) (121.7) (110) 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 18.6 47 Di 2 Tr2 Th Di 1 Tr1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 24 (62) (50) 28.2 29.8 23 48 40.9 31.2 39.8 42.3 76.9 0 LABEL SIDE Each mark points the center position of each chip. Tr*: IGBT, Di*: FWDi, Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE C1 C1(C1s) C1(C1s) C1 IC VGE = 0V G1 E1(E1s) V VGE = 15V G1 E1(E1s) E1C2 VGE = 0V G2 E2(E2s) E1C2 VGE = 15V G2 E2(E2s) IC E2 Tr2 V E2 Tr1 VCE(sat) test circuit C1 C1(C1s) C1(C1s) C1 IE VGE = 0V G1 E1(E1s) V VGE = 0V G1 E1(E1s) E1C2 VGE = 0V G2 E2(E2s) E1C2 VGE = 0V G2 E2(E2s) IE E2 Di2 V E2 Di1 VEC test circuit Arm IE 0V Load VGE 90% 0% IE trr -VGE + VCC IC 90% +VGE 0V -VGE 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 Irr Qrr = 1/2 Irr trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 20V 15 13 500 400 300 200 Tj = 25C 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 600 3.5 VGE = 15V 3 2.5 2 1.5 1 0.5 0 0 100 200 300 Tj = 25C Tj = 125C 400 500 600 11 10 100 0 9 8 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25C 8 6 EMITTER CURRENT IE (A) 102 7 5 3 2 4 IC = 300A IC = 600A 2 IC = 120A 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 Tj = 25C Tj = 125C 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 7 5 3 2 SWITCHING TIME (ns) Cies CAPACITANCE (nF) 101 7 5 3 2 103 7 5 3 2 tf td(off) Conditions: VCC = 300V VGE = 15V RG = 5.1 Tj = 125C Inductive load Coes 100 7 5 3 2 102 7 5 3 2 td(on) Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) tr 2 3 5 7 102 2 3 5 7 103 101 1 10 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 Conditions: VCC = 300V VGE = 15V RG = 5.1 101 Tj = 125C 7 Inductive load 7 5 3 2 5 3 2 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) 3 2 tf td(off) Eoff Eon 102 7 Err tr 5 td(on) 3 2 101 0 10 Conditions: VCC = 300V VGE = 15V IC = 300A Tj = 125C Inductive load 3 5 7 101 2 3 5 7 102 100 7 5 3 2 2 10-1 1 10 2 3 5 7 102 2 3 5 7 103 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 Conditions: VCC = 300V 5 VGE = 15V 3 RG = 5.1 Tj = 25C 2 Inductive load Irr trr 2 10 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 Eoff Eon SWITCHING LOSS (mJ/pulse) Conditions: 100 VCC = 300V 7 5 VGE = 15V 3 IC, IE = 300A 2 Tj = 125C Inductive load 10-1 0 10 23 5 7 101 7 5 3 2 Err lrr (A), trr (ns) 101 2 3 5 7 102 101 1 10 2 3 5 7 102 2 3 5 7 103 GATE RESISTANCE RG () EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse 5 TC = 25C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 300A VCC = 200V 15 VCC = 300V NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 10-1 10 10-2 7 5 3 2 Inverter IGBT part : Per unit base = Rth(j-c) = 0.13K/W 5 0 0 200 400 600 800 1000 1200 Inverter FWDi part : Per unit base = Rth(j-c) = 0.22K/W 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s) GATE CHARGE QG (nC) Jan. 2009 7 |
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